scholarly journals Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1045
Author(s):  
Ismael Cosme ◽  
Andrey Kosarev ◽  
Saraí Zarate-Galvez ◽  
Hiram E. Martinez ◽  
Svetlana Mansurova ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Solid Phase ◽  
Low Frequency ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Germanium Content ◽  
Hydrogen Dilution ◽  
Frequency Plasma ◽  
Rf Plasma Discharge ◽  
And Control

In this work, we present the study of the atomic composition in amorphous SiXGeY:HZ films deposited by radio frequency (RF—13.56 MHz) plasma discharge at low deposition temperature. A study and control of Si and Ge atoms termination using H-dilution in SiGe:H alloys deposited by RF plasma discharge was conducted and we made a comparison with low-frequency plasma discharge studies. Solid contents of the main elements and contaminants were determined by SIMS technique. It was found that for low dilution rates from RH = 9 to 30, the germanium content in the solid phase strongly depends on the hydrogen dilution and varies from Y = 0.49 to 0.68. On the other hand, with a higher presence of hydrogen in the mixture, the germanium content does not change and remains close to the value of Y = 0.69. The coefficient of Ge preferential incorporation depended on RH and varied from PGe = 0.8 to 4.3. Also, the termination of Si and Ge atoms with hydrogen was studied using FTIR spectroscopy. Preferential termination of Si atoms was observed in the films deposited with low RH < 20, while preferential termination of Ge atoms was found in the films deposited with high RH > 40. In the range of 20 < RH < 40, hydrogen created chemical bonds with both Si and Ge atoms without preference.

Plasma-engineered bifunctional cobalt–metal organic framework derivatives for high-performance complete water electrolysis

Nanoscale ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 6201-6211
Author(s):  
Wenxia Chen ◽  
Wei Wei ◽  
Kefeng Wang ◽  
Nan Zhang ◽  
Guangliang Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Organic Framework ◽  
Water Electrolysis ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Cobalt Metal ◽  
Simultaneous Oxidation ◽  
Rf Plasma Discharge ◽  
Metal Organic ◽  
Organic Framework

A MOF-derived CoPO hollow polyhedron structure is designed by simultaneous oxidation/phosphatization processes during Ar–N2 RF plasma discharge.

scholarly journals Low frequency instabilities during dust particle growth in a radio-frequency plasma

2006 ◽  
Vol 13 (9) ◽  
pp. 092103 ◽  
Author(s):  
Maxime Mikikian ◽  
Marjorie Cavarroc ◽  
Lénaïc Couëdel ◽  
Laïfa Boufendi
Keyword(s):  
Radio Frequency ◽  
Dust Particle ◽  
Low Frequency ◽  
Particle Growth ◽  
Radio Frequency Plasma ◽  
Frequency Plasma

scholarly journals Fecal Coliforms and Total Coliforms Removal in Water Using Radio-Frequency (RF) Plasma System

2015 ◽  
Vol 9 (7) ◽  
pp. 80 ◽  
Author(s):  
Reni Desmiarti ◽  
Ariadi Hazmi ◽  
Yenni Trianda
Keyword(s):  
Drinking Water ◽  
Radio Frequency ◽  
Plasma Treatment ◽  
Death Rate ◽  
Fecal Coliforms ◽  
Rf Plasma ◽  
Radio Frequency Plasma ◽  
Plasma System ◽  
Total Coliforms ◽  
Frequency Plasma

A radio-frequency plasma system (RF) was used to investigate the removal of microorganisms from water.Plasma generated by RF radiation can produce active compounds (H•, •OH, H2O2, O3, etc.) that have a highoxidation potential and can kill microorganisms present in water (fecal coliforms and total coliforms). Thefrequency of the plasma system was set to 3.0, 3.3 and 3.7 MHz and applied to river water for 60 minutes. Theresults show that in all runs, the pH of the water produced was in the range from 7.4 to 7.9. The removalefficiencies of fecal coliforms achieved were between 83.75 and 95% and were higher than the removalefficiencies of total coliforms, which were between 82.61 and 93.48%. Meanwhile, the death rate (kD) of fecalcoliforms wasfaster than that of total coliforms. Therefore, the removal of total coliforms is the key to removingmicroorganisms fromwater. RF plasma treatment can be used for treatment of drinking water to decreasemicroorganisms.

Phosphorous and Boron Incorporation and its Effect on Optical Properties of Ge:H and Si0.01Ge0.99:HFilms Deposited by LF PECVD

2012 ◽  
Vol 1372 ◽  
Author(s):  
Nery Delgadillo ◽  
Andrey Kosarev ◽  
Afonso Torres ◽  
Lancelot Garcia ◽  
Brian Gonzales
Keyword(s):  
Gas Phase ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Chemical Vapour ◽  
Low Frequency ◽  
Localized States ◽  
Optical Measurements ◽  
Band Tail ◽  
Frequency Plasma ◽  
Secondary Ion

ABSTRACTDeposition conditions that provided low absorption related to both band tail and deep localized states have been found for both materials Ge:H and Si1YGeY:H. Phosphorous incorporation on Si0.01Ge0.99:H films and boron incorporation on Ge:H films were deposited by low frequency plasma-enhanced chemical vapour deposition (LF PECVD). The phosphorous incorporation in solidphase was observed to preferential with the increase of the doping in the gas phase to 2.5 %, and 2.5% to 4% was observed preferential Si0.01Ge0.99 film, boron incorporation in solid phase increase linearly with the increase of the doping gas phase. The content of solid phase was characterized by Secondary ion mass spectrometry (SIMS) profiling. Hydrogen concentration in the films was determined from Fourier transform infrared spectroscopy (FTIR) and SIMS measurements. Optical measurements provided optical gap, localized states, and band tail. A significant reduction of both band tail and deep localized states were observed at boron incorporation in solid phase = 0.004% on Ge:H films and the same were observed at phosphorous incorporation in solid phase = 0.29% on Si0.01Ge0.99:H films.

Enhanced Bone Cells Growth and Proliferation on TiO2 Nanotubular Substrates Treated by RF Plasma Discharge

2010 ◽  
Vol 13 (3) ◽  
pp. B95-B101 ◽  
Author(s):  
Meena Mahmood ◽  
Philip Fejleh ◽  
Alokita Karmakar ◽  
Ashley Fejleh ◽  
Yang Xu ◽  
...  
Keyword(s):  
Bone Cells ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Rf Plasma Discharge

A Spectroscopic Study of the Conditions Required for Plasma Etching of Aluminium in BCl3 and Cl2 Plasmas

1987 ◽  
Vol 98 ◽  
Author(s):  
J. A. Cairns ◽  
R. Smailes ◽  
D. C. W. Blaikley ◽  
P. M. Banks ◽  
G. Hancock ◽  
...  
Keyword(s):  
Steady State ◽  
Plasma Etching ◽  
Ground State ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Rf Plasma Discharge ◽  
State Models

ABSTRACTOptical Emission Spectroscopy (OES) with argon actinometry has been used to study the influence of machine parameters on the composition of a BCl3 RF plasma discharge in the absence and presence of aluminium. Two steady state models are proposed to account for the appearance of the various species seen, and to explain their relative abundances in response to changes in power and pressure. The validity of the actinometric technique for measuring relative changes in ground state concentrations is discussed also.

Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeYSi1-Y Films Deposited by Low Frequency Plasma

2006 ◽  
Vol 910 ◽  
Author(s):  
Andrey Kosarev ◽  
L. Sanchez ◽  
A. Torres ◽  
T. Felter ◽  
A. Ilinskii ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Low Frequency ◽  
Average Diameter ◽  
Gas Flows ◽  
Average Height ◽  
Optical And Electrical Properties ◽  
Hydrogen Dilution ◽  
Frequency Plasma

AbstractWe report on a systematical study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by low frequency PE CVD. Silane and germane were used as feed gases diluted by hydrogen. Hydrogen dilution characterized by R= QH2/[QSiH4+QGeH4], where QH2, QSiH4, and QGeH4 are gas flows of hydrogen, silane and germane, respectively. The flow was varied in the range of R=20 to 80. Composition of the films was characterized by SIMS profiling. We did not observed a significant change of the deposition rate Vd in GeYSi1-Y:H films in all the range of R, while for Ge:H films Vd was significantly reduced after R=50. AFM characterization of the surface morphology demonstrated that at R=50 average height <H>(R) reached maximum in both Ge:H and GeYSi1-Y:H films, while average diameter <D>(R) had a minimum in GeYSi1-Y:H films and maximum in Ge:H films. Both Ge:H and GeYSi1-Y:H films demonstrated change of E04 in the studied range of R, and a minimum clearly appeared in &#61508;E at R=50-60 suggesting significant reduction in weak bonds of these films. The activation energy of conductivity Ea slightly increases with R in Ge:H films and shows no definitive trend in GeYSi1-Y:H: films. Both FTIR and SIMS data show a general trend of reducing hydrogen and oxygen content with R. These two types of films showed different behavior and correlations between surface morphology and optical and electrical properties.

scholarly journals Evidence of Carboxyl Modification of Hydrogen-Free Diamond-Like Carbon Films Assisted by Radio Frequency Plasma in Vacuum

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Yuqi Xue ◽  
Zixin Wang ◽  
Jun Wang ◽  
Changji Hu ◽  
Fangyan Xie ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Films ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Spectra Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Ft Ir

Modification of hydrogen-free diamond-like carbon (DLC) is presented, with acrylic acid (AA) vapor carried into a vacuum chamber by argon and with the in situ assistance of low-power radio frequency (RF) plasma at a temperature below 100°C. Measured by atomic force microscopy (AFM) technique, the roughness (Ra) of the DLC was 1.063±0.040 nm. XPS and FT-IR spectra analysis showed that carboxyl groups were immobilized on the surface of the DLC films, with about 40% of carboxyl group area coverage. It was found that the RF plasma and reaction time are important in enhancing the modification rate and efficiency.

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