Structural and Electrical Characterization of Pure and Al-Doped ZnO Nanorods

Pure and Al-doped (3 at.%) ZnO nanorods were prepared by two-step synthesis. In the first step, ZnO thin films were deposited on silicon wafers by spin coating; then, ZnO nanorods (NR) and Al-doped ZnO NR were grown using a chemical bath method. The structural properties of zincite nanorods were determined by X-ray diffraction (XRD) and corroborated well with the morphologic properties obtained by field-emission gun scanning electron microscopy (FEG SEM) with energy-dispersive X-ray spectroscopy (EDS). Morphology results revealed a minute change in the nanorod geometry upon doping, which was also visible by Kelvin probe force microscopy (KPFM). KPFM also showed preliminary electrical properties. Detailed electrical characterization of pure and Al-doped ZnO NR was conducted by temperature-dependent current–voltage (I–V) measurements on Au/(Al)ZnO NR/n-Si junctions. It was shown that Al doping increases the conductivity of ZnO NR by an order of magnitude. The I–V characteristics of pure and Al-doped ZnO NR followed the ohmic regime for lower voltages, whereas, for the higher voltages, significant changes in electric conduction mechanisms were detected and ascribed to Al-doping. In conclusion, for future applications, one should consider the possible influence of the geometry change of (Al)ZnO NRs on their overall electric transport properties.

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Electrical characterization of an operating Sipn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy

Journal of Applied Physics ◽

10.1063/1.1375803 ◽

2001 ◽

Vol 90 (1) ◽

pp. 443-448 ◽

Cited By ~ 27

Author(s):

G. H. Buh ◽

H. J. Chung ◽

J. H. Yi ◽

I. T. Yoon ◽

Y. Kuk

Keyword(s):

Electrical Characterization ◽

Kelvin Probe Force Microscopy ◽

Kelvin Probe ◽

Scanning Capacitance Microscopy ◽

Force Microscopy ◽

Junction Diode

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Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates

MRS Proceedings ◽

10.1557/proc-537-g3.76 ◽

1998 ◽

Vol 537 ◽

Author(s):

L.J. Schowalter ◽

Y. Shusterman ◽

R. Wang ◽

I. Bhat ◽

G. Arunmozhi ◽

...

Keyword(s):

Epitaxial Growth ◽

Electrical Characterization ◽

High Quality ◽

X Ray ◽

Force Microscopy ◽

Ion Channeling ◽

Atomic Force ◽

Nitride Layers ◽

Very High

AbstractHigh quality, epitaxial growth of AlN and AlxGal-xN by OMVPE has been demonstrated on single-crystal AIN substrates. Here we report characterization of epitaxial layers on an a-face AlN substrate using Rutherford Backscattering/ion channeling, atomic force microscopy (AFM), x-ray rocking curves, and preliminary electrical characterization. Ion channeling along the [1010] axis gives a channeling minimum yield of 1.5% indicating a very high quality epitaxial layer.

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Characterization of Al-doped ZnO nanorods grown by chemical bath deposition method

Innovaciencia Facultad de Ciencias Exactas Físicas y Naturales ◽

10.15649/2346075x.463 ◽

2018 ◽

Vol 6 (1) ◽

pp. 1-9

Author(s):

Sabah M. Ahmed

Keyword(s):

Metal Oxide ◽

Gas Sensors ◽

Zno Nanorods ◽

Metal Oxide Semiconductors ◽

Al Doping ◽

Oxide Semiconductors ◽

X Ray ◽

Glass Substrates ◽

Doped Zno ◽

Doping Ratio

Introduction: In recent years a metal oxide semiconductors have been paid attention due to their excellent chemical and physical properties. ZnO (Zinc oxide) is considered as one of the most attractive semiconductor materials for implementation in photo-detectors, gas sensors, photonic crystals, light emitting diodes, photodiodes, and solar cells, due to its novel electrical and optoelectronic properties. There are different uses of metal oxide semiconductors such us, UV photodetectors which are useful in space research’s, missile warning systems, high ﬂame detectors, air quality spotting, gas sensors, and precisely calculated radiation for the treatment of UV-irradiated skin. ZnO is a metal oxide semiconductors and it is used as a transparent conducting oxide thin ﬁlm because it has the best higher thermal stability, best resistance against the damage of hydrogen plasma processing and relatively cheaper if one compares it with ITO. Materials and Methods: On glass substrates, Al-doped ZnO (AZO) nanorods have been grown by a low -cost chemical bath deposition (CBD) method at low temperature. The seed layer of ZnO was coated on glass substrates. The effect of the Al-doping on the aligned, surface morphology, density, distribution, orientation and structure of ZnO nanorods are investigated. The Al-doping ratios are 0%, 0.2%, 0.8% and 2%. The Aluminum Nitrate Nonahydrate (Al (NO3)3.9H2O) was added to the growth solution, which is used as a source of the aluminum dopant element. The morphology and structure of the Al-doped ZnO nanorods are characterized by field emission scanning electron microscopy (FESEM) and high-resolution X-ray diffractometer (XRD). using the radio RF (Radio frequency) magnetron technique. Results and Discussion: The results show that the Al-doping have remarkable effects on the topography parameters such as diameter, distribution, alignment, density and nanostructure shape of the ZnO nanorods. These topography parameters have proportionally effective with increases of the Al-doping ratio. Also, X-ray diffraction results show that the Al-doping ratio has a good playing role on the nanostructure orientation of the ZnO nanorods. Conclusions: The Aluminum Nitride Nanohydrate considered as a good Aluminum source for doping ZnONR. It is clear from FESEM results that the Al-doping of ZnONR has a remarkable effect on the surface topography of nanorods for all aluminum doping ratios. From XRD patterns, it concludes that as the Al-doping ratio increases, the reorientation of the nanostructure of ZnO increases towards [100] direction. The results obtained also have shown that the average diameter of a nanorod is increased with increasing the ratio of Al-doping.

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Synthesis and Characterization of ZnO Nanorods Using Molecular Beam Epitaxy

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.622-623.919 ◽

2012 ◽

Vol 622-623 ◽

pp. 919-924 ◽

Cited By ~ 1

Author(s):

M. Asghar ◽

Khalid Mahmood ◽

M. Yasin Raja ◽

M.A. Hasan

Keyword(s):

Raman Spectroscopy ◽

Zno Nanorods ◽

X Ray Diffraction ◽

Type Conductivity ◽

X Ray ◽

Force Microscopy ◽

Atomic Force ◽

Capacitance Voltage ◽

Vertically Aligned

We present the study of the growth of ZnO nanorods on p-Si (100) using MBE. Various characterization techniques such as Fourier transform infra-red (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), Raman spectroscopy and capacitance – voltage (C-V) measurements were employed to analyze and assess the grown ZnO nanorods. AFM clearly demonstrated the growth of vertically aligned nanorods, however, they get diffused as the thickness of the layer is increased beyond 1 µm. C-V measurements in particular, justified p-n junction between Si/ZnO nanorods. The junction showed n-type conductivity with carrier concentration 1×1015cm-3. The source of this n-type conductivity was Zn-interstitials and the presence of Zn-interstitials was confirmed by EDAX and Raman spectroscopy. Experimental detail and results were presented that help in furtherance of our understanding of the material issues and its potential as required for the practical devices.

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Electrical characterization of single-walled carbon nanotubes in organic solar cells by Kelvin probe force microscopy

Applied Physics Letters ◽

10.1063/1.3332489 ◽

2010 ◽

Vol 96 (8) ◽

pp. 083302 ◽

Cited By ~ 24

Author(s):

Liming Liu ◽

Guangyong Li

Keyword(s):

Carbon Nanotubes ◽

Solar Cells ◽

Organic Solar Cells ◽

Electrical Characterization ◽

Single Walled Carbon Nanotubes ◽

Kelvin Probe ◽

Force Microscopy ◽

Single Walled Carbon ◽

Walled Carbon Nanotubes

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Structural and optical characteristic of 1-(4-Methylsulfonyl Phenyl)-3-(4-n, n Dimethyl (amino Phenyl)-2-Propen- 1-One (MSPPP) Chalcone doped ZnO nanoparticles

NanoNEXT ◽

10.34256/nnxt2114 ◽

2021 ◽

pp. 28-34

Author(s):

Mohana F. Attia ◽

Abdelrahman A. Elbadawi

Keyword(s):

Zno Nanoparticles ◽

Diffuse Reflection ◽

Energy Gap ◽

Hexagonal Wurtzite Structure ◽

X Ray Diffraction ◽

X Ray ◽

Crystallite Sizes ◽

Order Of Magnitude ◽

Doped Zno

The purpose of this paper is to investigate the structural and optical characteristics of 1-(4-Methylsulfonyl Phenyl)-3-(4-n, n Dimethyl (amino Phenyl)-2-Propen- 1-One (MSPPP) Chalcone doped in ZnO nanoparticles. Part of the aim is to study the characterization of chalcone doped ZnO nanoparticles by several techniques such as X-ray diffraction, Scanning electron microscope, FTIR spectroscopy, and diffuse reflection spectra. All doped samples showed a hexagonal wurtzite structure. This study has shown that the crystallite size of pure ZnO varied from 23.50 to 27.45 nm and when increasing the chalcone percentage by 0.5 and 1.5%, has increased the crystallite sizes in the range of 33.40–33.80 nm and 33.80–36.20 nm, respectively. The value of the energy gap (Eg) for ZnO nanoparticles was 3.14 eV. For 0.5 and 1.5% chalcone doped ZnO, the energy gap decreased by an order of magnitude 0.16 eV.

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Structural, Optical and Electrical Characterization of Thermally Evaporated TlBr Thin Films

MRS Proceedings ◽

10.1557/proc-1164-l09-11 ◽

2009 ◽

Vol 1164 ◽

Cited By ~ 1

Author(s):

Natália Destefano ◽

Marcelo Mulato

Keyword(s):

Thin Films ◽

Optical Band Gap ◽

Thermal Evaporation ◽

Electrical Characterization ◽

Current Ratio ◽

X Ray ◽

Electrical Resistivities ◽

Order Of Magnitude ◽

Deposition Height

AbstractThis paper presents the study related to the production of TlBr thin films. Films produced by thermal evaporation present better structural properties than those produced by spray pyrolysis. The main XRD peak of the evaporated films correspond to the (100) plane, whose structure is columnar as revealed by cross section SEM. The thickness decreases with increasing deposition height. Optical band gap of 3.0 eV and electrical resistivities about 109 Ωcm were obtained. EDS reveals a reduction in the amount of Br in the final films. One order of magnitude was obtained for the photo-to-dark current ratio when irradiation in the medical diagnosis X-ray mammography energy range was used.

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Preparation and characterization of Mn doped ZnO nanorods -=SUP=-*-=/SUP=-

Физика твердого тела ◽

10.21883/ftt.2018.05.45876.295 ◽

2018 ◽

Vol 60 (5) ◽

pp. 999

Author(s):

R. Dilber Pushpitha ◽

L. Bruno Chandrasekar ◽

N.M. Segu Sahuban Bathusha ◽

R. Chandramohan ◽

M. Karunakaran ◽

...

Keyword(s):

Zno Nanorods ◽

Chemical Precipitation ◽

Precipitation Method ◽

X Ray Diffraction ◽

Free Electrons ◽

X Ray ◽

Vis Spectroscopy ◽

Doped Zno ◽

Mn Doped

AbstractMn doped ZnO nanorods were prepared by chemical precipitation method. The micro-structural and structural properties of the nanorods were calculated from the X-ray diffraction technique. The formed nanorods was seen in the scanning electron microscopy. The purity of the sample was confirmed by the energy dispersive X-ray analysis (EDX). The optical properties were studied using UV-Vis spectroscopy and photoluminescence. In the photoluminescence spectrum, the peaks due to recombination of free electrons, oxygen vacancy and intrinsic defects were observed. The magnetic properties were studied using vibrating sample magnetometer (VSM) and the paramagnetic nature of the material was confirmed.

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