scholarly journals Characterization of Al-doped ZnO nanorods grown by chemical bath deposition method

Author(s):  
Sabah M. Ahmed

Introduction: In recent years a metal oxide semiconductors have been paid attention due to their excellent chemical and physical properties. ZnO (Zinc oxide) is considered as one of the most attractive semiconductor materials for implementation in photo-detectors, gas sensors, photonic crystals, light emitting diodes, photodiodes, and solar cells, due to its novel electrical and optoelectronic properties. There are different uses of metal oxide semiconductors such us, UV photodetectors which are useful in space research’s, missile warning systems, high flame detectors, air quality spotting, gas sensors, and precisely calculated radiation for the treatment of UV-irradiated skin. ZnO is a metal oxide semiconductors and it is used as a transparent conducting oxide thin film because it has the best higher thermal stability, best resistance against the damage of hydrogen plasma processing and relatively cheaper if one compares it with ITO. Materials and Methods: On glass substrates, Al-doped ZnO (AZO) nanorods have been grown by a low -cost chemical bath deposition (CBD) method at low temperature. The seed layer of ZnO was coated on glass substrates. The effect of the Al-doping on the aligned, surface morphology, density, distribution, orientation and structure of ZnO nanorods are investigated. The Al-doping ratios are 0%, 0.2%, 0.8% and 2%. The Aluminum Nitrate Nonahydrate (Al (NO3)3.9H2O) was added to the growth solution, which is used as a source of the aluminum dopant element. The morphology and structure of the Al-doped ZnO nanorods are characterized by field emission scanning electron microscopy (FESEM) and high-resolution X-ray diffractometer (XRD). using the radio RF (Radio frequency) magnetron technique. Results and Discussion: The results show that the Al-doping have remarkable effects on the topography parameters such as diameter, distribution, alignment, density and nanostructure shape of the ZnO nanorods. These topography parameters have proportionally effective with increases of the Al-doping ratio. Also, X-ray diffraction results show that the Al-doping ratio has a good playing role on the nanostructure orientation of the ZnO nanorods. Conclusions: The Aluminum Nitride Nanohydrate considered as a good Aluminum source for doping ZnONR.  It is clear from FESEM results that the Al-doping of ZnONR has a remarkable effect on the surface topography of nanorods for all aluminum doping ratios. From XRD patterns, it concludes that as the Al-doping ratio increases, the reorientation of the nanostructure of ZnO increases towards [100] direction. The results obtained also have shown that the average diameter of a nanorod is increased with increasing the ratio of Al-doping.

1997 ◽  
Vol 117 (11) ◽  
pp. 560-564 ◽  
Author(s):  
Yasuhiro Shimizu ◽  
Eiichi Kanazawa ◽  
Yuji Takao ◽  
Makoto Egashira

2018 ◽  
Vol 11 (1) ◽  
pp. 1411-1419 ◽  
Author(s):  
Gitae Namgung ◽  
Qui Thanh Hoai Ta ◽  
Woochul Yang ◽  
Jin-Seo Noh

2011 ◽  
Vol 143-144 ◽  
pp. 562-566 ◽  
Author(s):  
Wen An ◽  
Chun Ying Yang

New progress of research on the preparation technique of micro gas sensors of metal oxide semiconductors is introduced, such as the chemical treatment of the gas sensing film, the deposited technique of gas sensing film in the oxygen radical assisted EB evaporation, the technique of the multilayered film, the fabrication technique of the thermally oxidized, the technique of the electrode configuration, the fabrication technique of the miniaturized arrays by micro-molding in capillaries, the dip-coating of the sol-gel. And their features will be analyzed respectively, and their existing problems and future development directions will be given.


2017 ◽  
Vol 19 (10) ◽  
pp. 6973-6980 ◽  
Author(s):  
Yumin Zhang ◽  
Jin Zhang ◽  
Jianhong Zhao ◽  
Zhongqi Zhu ◽  
Qingju Liu

Metal oxide semiconductors with special structures and morphologies have attracted considerable attention because of their promising applications in gas sensors.


2018 ◽  
Vol 9 ◽  
pp. 2832-2844 ◽  
Author(s):  
Dongjin Sun ◽  
Yifan Luo ◽  
Marc Debliquy ◽  
Chao Zhang

Owing to the excellent sensitivity to gases, metal-oxide semiconductors (MOS) are widely used as materials for gas sensing. Usually, MOS gas sensors have some common shortages, such as relatively poor selectivity and high operating temperature. Graphene has drawn much attention as a gas sensing material in recent years because it can even work at room temperature, which reduces power consumption. However, the low sensitivity and long recovery time of the graphene-based sensors limit its further development. The combination of metal-oxide semiconductors and graphene may significantly improve the sensing performance, especially the selectivity and response/recovery rate at room temperature. In this review, we have summarized the latest progress of graphene/metal-oxide gas sensors for the detection of NO2, NH3, CO and some volatile organic compounds (VOCs) at room temperature. Meanwhile, the sensing performance and sensing mechanism of the sensors are discussed. The improved experimental schemes are raised and the critical research directions of graphene/metal-oxide sensors in the future are proposed.


2019 ◽  
Vol 29 (3) ◽  
pp. 158 ◽  
Author(s):  
Hussein Abdullah Hameed

Magnesium-doped zinc oxide (ZnO: Mg) nanorods and nanotubes films were prepared by hydrothermal method deposited on glass substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), photoluminescence (PL), and optical absorption spectroscopy (UV) were performed to characterize the prepared films. X-ray diffraction analysis showed a decrease in the lattice parameters of Mg doped ZnO NRs. The Photoluminescence of the undoped and Mg-doped ZnO NRs displayed a near band edge. At 10 V bias, the metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector performance of the Mg-doped ZnO prepared for various Mg concentrations of 0.0, 0.02, and 0.06 was investigated under radiation of 40μW/cm2 at the wavelengths of 365 and 385 nm UV light. The responsivity, detectivity and quantum efficiency of Mg-doped based on MSM detector were 0.118A/W, 1.0579*1012 and 40.05157 under UV of wavelength 365nm respectively.


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