scholarly journals Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 625
Author(s):  
Younghyun Kim ◽  
Jae-Hoon Han ◽  
Daehwan Ahn ◽  
Sanghyeon Kim
Keyword(s):  
Silicon Photonics ◽  
High Speed ◽  
High Performance ◽  
Phase Shifter ◽  
Phase Shifters ◽  
Next Generation ◽  
Optical Modulators ◽  
Optical Phase ◽  
High Modulation ◽  
Integrated Optical

The realization of a silicon optical phase shifter marked a cornerstone for the development of silicon photonics, and it is expected that optical interconnects based on the technology relax the explosive datacom growth in data centers. High-performance silicon optical modulators and switches, integrated into a chip, play a very important role in optical transceivers, encoding electrical signals onto the light at high speed and routing the optical signals, respectively. The development of the devices is continuously required to meet the ever-increasing data traffic at higher performance and lower cost. Therefore, heterogeneous integration is one of the highly promising approaches, expected to enable high modulation efficiency, low loss, low power consumption, small device footprint, etc. Therefore, we review heterogeneously integrated optical modulators and switches for the next-generation silicon photonic platform.

InGaAs/InP Multiquantum well Structures Grown by Trichloride Vapor Phase Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
K. W. Wang ◽  
V. D. Mattera ◽  
K. Tai ◽  
S. N. G. Chu ◽  
D. D. Roccasecca ◽  
...  
Keyword(s):  
High Speed ◽  
High Performance ◽  
Stark Effect ◽  
Optical Modulators ◽  
Double Crystal ◽  
Cross Sectional ◽  
High Modulation ◽  
Transmission Electron ◽  
Device Applications ◽  
Multiquantum Well

AbstractLong wavelength (l.3pm<X<l.551un) InGaAs/InP multiquantum well (MQW) PIN structures in which the quantum confined Stark effect can be observed, are of particular interest because of their potential for high modulation contrast ratios and high speed operation. The chemistry of trichloride VPE lends itself to the growth of high purity InGaAsP heterostructures which are essential for the realization of high performance optical modulators and switches. In this study, we investigate the application of multi-frit trichloride VPE for the highly uniform epitaxial growth of InGaAs/InP MQW structures on two-inch InP substrates for advanced photonic device applications. The growth of MQW structures with various well thicknesses was studied as was the effect of substrate orientation. The structures have been characterized by infrared absorption and photoluminescence spectroscopy, cross-sectional transmission electron microscopy and double crystal x-ray diffraction.

scholarly journals RF-MEMS Monolithic K and Ka Band Multi-State Phase Shifters as Building Blocks for 5G and Internet of Things (IoT) Applications

Sensors ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 2612 ◽  
Author(s):  
Jacopo Iannacci ◽  
Giuseppe Resta ◽  
Alvise Bagolini ◽  
Flavio Giacomozzi ◽  
Elena Bochkova ◽  
...  
Keyword(s):  
Internet Of Things ◽  
Communication Systems ◽  
High Speed ◽  
Phase Shifter ◽  
Satellite Communication ◽  
Rf Mems ◽  
Building Blocks ◽  
Phase Shifters ◽  
Small Cells ◽  
Mems Technology

RF-MEMS, i.e., Micro-Electro-Mechanical Systems (MEMS) for Radio Frequency (RF) passive components, exhibit interesting characteristics for the upcoming 5G and Internet of Things (IoT) scenarios, in which reconfigurable broadband and frequency-agile devices, like high-order switching units, tunable filters, multi-state attenuators, and phase shifters will be necessary to enable mm-Wave services, small cells, and advanced beamforming. In particular, satellite communication systems providing high-speed Internet connectivity utilize the K and Ka bands, which offer larger bandwidth compared to lower frequencies. This paper focuses on two design concepts of multi-state phase shifter designed and manufactured in RF-MEMS technology. The networks feature 4 switchable stages (16 states) and are developed for the K and Ka bands. The proposed phase shifters are realized in a surface micromachining RF-MEMS technology and the experimentally measured parameters are compared with Finite Element Method (FEM) multi-physical electromechanical and RF simulations. The simulated phase shifts at both the operating bands fit well the measured value, despite the measured losses (S21) are larger than 5–7 dB if compared to simulations. However, such a non-ideality has a technological motivation that is explained in the paper and that will be fixed in the manufacturing of future devices.

scholarly journals Grating Lobe-Free Beam Steering through Optical Phase Array Using Phase-Compensated Two Index-Mismatched Silicon Wires-Based Emitters

2020 ◽  
Vol 10 (4) ◽  
pp. 1225
Author(s):  
Rong-An Zhang ◽  
Ting-Sheng Lin ◽  
Wai-Ting Liu ◽  
Shih-Hsiang Hsu ◽  
Che-Chang Chang
Keyword(s):  
Phase Shifter ◽  
Beam Steering ◽  
Thermal Control ◽  
Phase Shifters ◽  
Phase Array ◽  
Optical Phase ◽  
Grating Lobe ◽  
Half Wavelength ◽  
Beam Formation ◽  
Free Beam

The beam formation can be treated as the diffraction pattern. A 1-D light detection and ranging beam steering could be derived through a phase shifter array using Rayleigh–Sommerfeld Diffraction, which is then utilized to demonstrate grating lobe-free beam steering from the optical phase array emitter with half-wavelength pitches. The half-wavelength pitch cannot demonstrate beam formation without any evanescent coupling blocking between emitters. Here, two index-mismatched silicon wires in the emitter array are proposed by the optical phase compensation through waveguide width adjustment, to avoid the complex and addressable thermal control on the phase shifters. Moreover, the same output optical waveguide mode needs to be further considered to demonstrate the grating lobe-free beam steering. In order to get the adiabatic connection between two different pitches between the phase shifter and emitter, an optical path equalization will also be applied.

scholarly journals Silicon photonics for high data rate applications -INVITED

2020 ◽  
Vol 238 ◽  
pp. 01005
Author(s):  
David J. Thomson ◽  
Weiwei Zhang ◽  
Ke Li ◽  
Kapil Debnath ◽  
Shenghao Liu ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
High Speed ◽  
High Performance ◽  
High Efficiency ◽  
Electrical Signal ◽  
Electronic Components ◽  
High Data ◽  
Electro Optic ◽  
Optical Domain ◽  
Linear Modulation

The high speed conversion of signals between the optical and electrical domains is crucial for many key applications of silicon photonics. Electro-optic modulators integrated with electronic drive amplifiers are typically used to convert an electrical signal to the optical domain. Design of these individual elements is important to achieve high performance, however a true optimisation requires careful co-design of the photonic and electronic components considering the properties of each other. Here we present our recent results in this area together with a MOSCAP type modulator with the potential for high speed, high efficiency and highly linear modulation.

Comparison of wavelength dependence of integrated optical phase shifter

2019 ◽  
Vol 48 (5) ◽  
pp. 520001
Author(s):  
丁君珂 Ding Junke ◽  
陈 浩 Chen Hao ◽  
蒋建光 Jiang Jianguang ◽  
孟浩然 Meng Haoran ◽  
刘欣悦 Liu Xinyue ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Wavelength Dependence ◽  
Optical Phase ◽  
Integrated Optical

A reconfigurable scheme for realization of electro-optical logic gate based on silicon-graphene Mach–Zhender interferometer

2019 ◽  
Vol 33 (04) ◽  
pp. 1950005
Author(s):  
Hossein Zivarian ◽  
Abbas Zarifkar
Keyword(s):  
High Speed ◽  
High Performance ◽  
Phase Shifter ◽  
Logic Gate ◽  
Extinction Ratio ◽  
Slot Waveguide ◽  
Optical Logic ◽  
Eye Diagram ◽  
Optical Logic Gate ◽  
Operational Modes

In this paper, we propose a reconfigurable scheme for implementation of an electro-optical logic gate by utilizing a Mach–Zehnder interferometer (MZI)-based structure. In order to achieve high performance and small footprint for the proposed logic gate, we have used a compact, broadband, low power and high speed MZI-based electro-optical switch which consists of a silicon-graphene slot waveguide as phase shifter in each arm of the MZI structure. Our design can perform electro-optical AND, OR and XOR logic functions in three different operational modes by using three electrical control signals. The functionality of the reconfigurable electro-optical logic gate is investigated with the help of eye diagram analysis for all three operational modes. Simulation results show that the proposed reconfigurable logic gate is able to work under at least 62.5 Gbit/s with high extinction ratio (ER) about 24.6 dB for transverse electric polarization mode at telecommunication wavelength of 1.55 [Formula: see text]m.

scholarly journals Comparison of Integrated Optical Phase Shifters Designed in Different Regime

2018 ◽  
Vol 173 ◽  
pp. 01034
Author(s):  
Hao Chen ◽  
Haoran Meng ◽  
Xinyue Liu ◽  
Junke Ding ◽  
Jianguang Jiang ◽  
...  
Keyword(s):  
Refractive Index ◽  
Wavelength Range ◽  
Phase Shifter ◽  
Wavelength Dependence ◽  
Phase Shifters ◽  
Length Difference ◽  
Integrated Optical ◽  
Refractive Index Difference ◽  
Fabrication Tolerance ◽  
Waveguide Core

A comparative study, in aspects of both wavelength dependence and fabrication tolerance, is carried out between silica-based phase shifters designed in two different regime, namely length difference regime and refractive index difference regime. Results show that in the wavelength range of 1500-1600 nm, phase shifter designed in refractive index difference regime has a working wavelength range 2.8~3.1 times wide as that designed in length difference regime; while in the aspect of fabrication tolerance, phase designed in length difference regime is advantageous, with respect to waveguide core dimension error, and waveguide core refractive index error as well.

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