scholarly journals The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 737
Author(s):  
An-Chen Liu ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Yu-Wen Huang ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
Mobile Communications ◽  
High Power ◽  
Electronic Devices ◽  
High Volume ◽  
Cmos Technology ◽  
High Electron ◽  
Process Technology ◽  
Unit Process ◽  
Rf Power Amplifier ◽  
Device Technology

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

High efficiency continuous mode RF power amplifier based on second and third harmonic manipulation

2020 ◽  
pp. 1-11
Author(s):  
Firas M. Ali ◽  
Mahmuod H. Al-Muifraje ◽  
Thamir R. Saeed
Keyword(s):  
Power Amplifier ◽  
Mobile Communications ◽  
Maximum Efficiency ◽  
Harmonic Load ◽  
High Electron ◽  
Continuous Mode ◽  
Rf Power ◽  
Third Harmonic ◽  
Rf Power Amplifier ◽  
Class B

Abstract Continuous mode class-J radio-frequency (RF) power amplifier is a promising technique that extends the operating bandwidth of the conventional class-B power amplifier. However, the maximum theoretical efficiency is limited to that of the class-B power amplifier. In this paper, an enhanced mode of operation for the class-J power amplifier is proposed by incorporating a third harmonic voltage component to produce an optimum waveform for maximizing the fundamental voltage component and thereby to increase the drain efficiency and introduce a new design space. A detailed derivation for the necessary relations of output power, drain efficiency, and the required harmonic load impedances is provided, showing a significant improvement in theoretical maximum efficiency from 78.5 to 89.8%. In order to confirm the developed analytic approach, a 10 W prototype amplifier model was designed and fabricated to operate within the global system for mobile communications (GSM) frequency band 850–950 MHz using a commercial GaN power high electron mobility transistor (HEMT). The experimental results have indicated that the drain efficiency of the circuit varies from 68 to 80% within the desired band.

Graphite Nanocomposite Substrates for Improved Performance of Flexible, High-Power AlGaN/GaN Electronic Devices

2021 ◽  
Author(s):  
Katherine M. Burzynski ◽  
Nicholas R. Glavin ◽  
Michael Snure ◽  
Michael J. Motala ◽  
John Ferguson ◽  
...  
Keyword(s):  
High Power ◽  
Electronic Devices ◽  
Improved Performance

Design and Characteristics of Microfocus X-ray Source with Sealed Tube and Transmissive Target on Diamond Window

2021 ◽  
Vol 79 (6) ◽  
pp. 631-640
Author(s):  
Takaaki Tsunoda ◽  
Takeo Tsukamoto ◽  
Yoichi Ando ◽  
Yasuhiro Hamamoto ◽  
Yoichi Ikarashi ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Speed ◽  
Electronic Device ◽  
High Reliability ◽  
Electronic Devices ◽  
Lithium Ion ◽  
High Power Density ◽  
High Magnification ◽  
X Ray

Electronic devices such as medical instruments implanted in the human body and electronic control units installed in automobiles have a large impact on human life. The electronic circuits in these devices require highly reliable operation. Radiographic testing has recently been in strong demand as a nondestructive way to help ensure high reliability. Companies that use high-density micrometer-scale circuits or lithium-ion batteries require high speed and high magnification inspection of all parts. The authors have developed a new X-ray source supporting these requirements. The X-ray source has a sealed tube with a transmissive target on a diamond window that offers advantages over X-ray sources having a sealed tube with a reflective target. The X-ray source provides high-power-density X-ray with no anode degradation and a longer shelf life. In this paper, the authors will summarize X-ray source classification relevant to electronic device inspection and will detail X-ray source performance requirements and challenges. The paper will also elaborate on technologies employed in the X-ray source including tube design implementations for high-power-density X-ray, high resolution, and high magnification simultaneously; reduced system downtime for automated X-ray inspection; and reduced dosages utilizing quick X-ray on-and-off emission control for protection of sensitive electronic devices.

E-blood: High power aqueous redox flow cell for concurrent powering and cooling of electronic devices

Nano Energy ◽  
2021 ◽  
pp. 106864
Author(s):  
Xun Wang ◽  
Mengqi Gao ◽  
Yann Mei Lee ◽  
Manohar Salla ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
High Power ◽  
Electronic Devices ◽  
Flow Cell ◽  
Redox Flow Cell

Topology Optimization of High Power Electronic Devices

2001 ◽  
pp. 119-131
Author(s):  
Ronald H. W. Hoppe ◽  
Svetozara Petrova ◽  
Volker Schulz
Keyword(s):  
Topology Optimization ◽  
High Power ◽  
Electronic Devices ◽  
Power Electronic

scholarly journals Development of Technology for High-Power Industry Converters

2019 ◽  
Vol 8 (10) ◽  
pp. 3130-3132 ◽  
Keyword(s):  
Wind Turbines ◽  
High Power ◽  
Electronic Devices ◽  
Relevant Information ◽  
Power Industry ◽  
Power Converter ◽  
Power Electronic ◽  
Photo Voltaic ◽  
Universal Procedure

The power stable of the converters is actually coming from some milliwatts (as in a cellphone) to dozens of megawatts in an HVDC gearbox body. Along with "classic" electronic devices, power streams, as well as current, are actually utilized to hold relevant information, whereas along with power electronic devices, they lug power. This inverter may magnify source of power like gas- mobiles, little wind turbines, as well as photo-voltaic assortments (i.e. it agrees with for circulated power treatments). The principles of resources and also changes are actually described and also categorized. Coming from the general regulations of resource propinquities, a universal procedure of power converter formation exists.

scholarly journals Data Processing and Information Classification: An In-Memory Approach

2020 ◽  
Author(s):  
Milena Andrighetti ◽  
Giovanna Turvani ◽  
Giulia Santoro ◽  
Marco Vacca ◽  
Andrea Marchesin ◽  
...  
Keyword(s):  
Information Society ◽  
Electronic Devices ◽  
Cmos Technology ◽  
Hardware Accelerator ◽  
Huge Amount ◽  
Memory Wall ◽  
Information Classification ◽  
Enormous Amount ◽  
Many Sources ◽  
Problem Data

To live in the information society means to be surrounded by billions of electronic devices full of sensors that constantly acquire data. This enormous amount of data must be processed and classified. A solution commonly adopted is to send these data to server farms to be remotely elaborated. The drawback is a huge battery drain due to high amount of information that must be exchanged. To compensate this problem data must be processed locally, near the sensor itself. But this solution requires huge computational capabilities. While microprocessors, even mobile ones, nowadays have enough computational power, their performance are severely limited by the Memory Wall problem. Memories are too slow, so microprocessors cannot fetch enough data from them, greatly limiting their performance. A solution is the Processing-In-Memory (PIM) approach. New memories are designed that are able to elaborate data inside them eliminating the Memory Wall problem. In this work we present an example of such system, using as a case of study the Bitmap Indexing algorithm. Such algorithm is used to classify data coming from many sources in parallel. We propose an hardware accelerator designed around the Processing-In-Memory approach, that is capable of implementing this algorithm and that can also be reconfigured to do other tasks or to work as standard memory. The architecture has been synthesized using CMOS technology. The results that we have obtained highlights that, not only it is possible to process and classify huge amount of data locally, but also that it is possible to obtain this result with a very low power consumption.

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

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