scholarly journals Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1422
Author(s):  
Ki-Yeong Kim ◽  
Joo-Seok Noh ◽  
Tae-Young Yoon ◽  
Jang-Hyun Kim
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
Buffer Layers ◽  
Simulation Tool ◽  
Electrical Characteristics ◽  
Insulated Gate Bipolar Transistor ◽  
Computer Aided ◽  
Long Time ◽  
Tcad Simulation ◽  
Aided Design

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (Eoff) drops by about 7% when on-state voltage (Von) and breakdown voltage (BV) are similar. Von increases by about 0.5% and BV decreases by only about 0.8%.

scholarly journals PEMAKAIAN MEDICAL RAPID PROTOTYPING UNTUK PREKONTUR PLAT REKONSTRUKSI PADA RESEKSI MANDIBULA

2017 ◽  
Vol 4 (2) ◽  
pp. 149
Author(s):  
Arya Kusuma Agraha ◽  
Masykur Rahmat ◽  
Rahardjo .
Keyword(s):  
Rapid Prototyping ◽  
Computer Aided Design ◽  
Mandibular Reconstruction ◽  
Reconstruction Plate ◽  
Mandibular Bone ◽  
Accurate Picture ◽  
Computer Aided ◽  
Long Time ◽  
Cad Cam ◽  
Aided Design

Background: In the case of mandibular resection that leaves a large mandibular bone defect, a mandibular reconstruction is required to restore functional and postoperative aesthetic factors. Mandibular reconstruction plate installation on mandibular resection is very important but difcult to achieve maximum results. The formation of reconstruction plates can be preoperative and intraoperative. Preoperative stereolithography (medical rapid prototyping/MRP) can be used to form rapid and accurate plates (precontours). Objective: Report the use of MRP as an alternative tool to precontour mandibular reconstruction plate.Case management: Reported reconstruction of mandibular defects in one case of hemimandibulectomy and two cases of segmental resection with avascular iliac bone grafts using MRP through a computer-aided design and computer aided manufacture procedure (CAD/CAM) to establish preoperative reconstruction plates (precontour) so the surgery doesn’t take long time to reconstruct, by forming a mandibular models under normal circumstances.Result: The formation of a reconstruction plates (precontour) using MRP (medical rapid prototyping) with CAD / CAM procedure gives results in accordance with the original form.Conclusions: The making of MRP through CAD / CAM procedure gives maximal result resembling the form of mandibular model. The MRP models get an accurate picture of the patient’s jaw as a pre contour tools for reconstruction plate. The formation of the reconstruction plates (precontour) with these MRP model is obtained from CAD / CAM and provides a normal jaw image, so that preoperative precontouring will give good and maximum result on the reconstruction plates made under the MRP models.

Development of CAD-to-CAE Model Preparation Technology

2013 ◽  
Vol 459 ◽  
pp. 325-329
Author(s):  
Tetsuyuki Kubota ◽  
Peter Chow
Keyword(s):  
Computer Aided Design ◽  
Preparation Technology ◽  
Topological Information ◽  
3 Dimensional ◽  
3D Cad ◽  
Computer Aided ◽  
Long Time ◽  
Model Preparation ◽  
Solution Accuracy ◽  
Aided Design

This paper explains and demonstrates how to reduce time for preparation of 3-dimensional (3D) geometrical Computer-Aided-Engineering (CAE) model from 3D Computer-Aided-Design (CAD) data. In generally, CAE model preparation is labor intensive and takes long time. Main part of preparation work is simplification of 3D-CAD data to decrease mesh scale and without impacting the solution accuracy. The purpose of this study is to create automatic CAE model preparation technology for reduction of preparation time. In this study, automatic model preparation method is developed by using of geometrical and topological information of 3D-CAD data. Benchmark test is performed to proof the efficiency of the method.

scholarly journals Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)

2020 ◽  
Vol 10 (24) ◽  
pp. 8880
Author(s):  
Min Woo Kang ◽  
Woo Young Choi
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Gate Insulator ◽  
Radius Of Curvature ◽  
Computer Aided ◽  
Simulation Results ◽  
Tcad Simulation ◽  
Aided Design

The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation. The simulation results show that the hump behavior degrades the subthreshold swing (SS) and on-current (Ion) because the corners and sides of nanowires (NWs) have different surface potentials. The hump behavior can be successfully suppressed by increasing the radius of curvature (R) of NWs and reducing gate insulator thickness (Tins).

TCAD SIMULATION AND PERFORMANCE ANALYSIS OF SINGLE AND DUAL GATE OTFTs

2019 ◽  
Vol 27 (05) ◽  
pp. 1950145 ◽  
Author(s):  
A. D. D. DWIVEDI ◽  
POOJA KUMARI
Keyword(s):  
Performance Analysis ◽  
Computer Aided Design ◽  
Simulation Software ◽  
Electrical Characteristics ◽  
Organic Thin Film ◽  
Dual Gate ◽  
Tcad Simulation ◽  
Numerical Device ◽  
And Performance ◽  
Aided Design

This paper presents finite element-based numerical simulation and performance analysis of dual and single gate pentacene-based organic thin film transistors (OTFTs) using technology computer-aided design (TCAD) tools. Electrical characteristics of the devices have been simulated using 2D numerical device simulation software ATLAS™ from Silvaco International. Also, device parameters like threshold voltage, mobility, transconductance, subthreshold swing and current on/off ratio of the single and dual gate OTFTs have been extracted and compared.

A computer-aided design and simulation tool for switching converters

1987 ◽  
Author(s):  
S. S. Kelkar ◽  
R. B. Ridley ◽  
C. J. Hsiao ◽  
R. Ramkumar ◽  
F. C. Lee
Keyword(s):  
Computer Aided Design ◽  
Simulation Tool ◽  
Switching Converters ◽  
Computer Aided ◽  
Aided Design

scholarly journals Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

2021 ◽  
Vol 11 (24) ◽  
pp. 12075
Author(s):  
Jee-Hun Jeong ◽  
Ogyun Seok ◽  
Ho-Jun Lee
Keyword(s):  
Analytical Model ◽  
Computer Aided Design ◽  
Analytical Modeling ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Reverse Transfer ◽  
Tcad Simulation ◽  
Switching Characteristics ◽  
Aided Design

A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping concentration (NBPW) was extracted by analytical modeling and a numerical technology computer-aided design (TCAD) simulation, in order to analyze the breakdown mechanisms for SiC TMOSFETs using BPW, while considering the electric field distribution at the edge of the trench gate. Our results showed that the optimal NBPW obtained by analytical modeling was almost identical to the simulation results. In addition, the reverse transfer capacitance (Cgd) values obtained from the analytical model correspond with the results of the TCAD simulation by approximately 86%; therefore, this model can predict the switching characteristics of the effect BPW regions.

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