scholarly journals Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 832
Author(s):  
Hocheon Yoo ◽  
Keun Heo ◽  
Md. Hasan Raza Ansari ◽  
Seongjae Cho

Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.

2019 ◽  
Vol 7 (39) ◽  
pp. 12312-12320 ◽  
Author(s):  
Xiaoyong Yang ◽  
Deobrat Singh ◽  
Zhitong Xu ◽  
Ziwei Wang ◽  
Rajeev Ahuja

Motivated by the extraordinary physical and chemical properties of Janus transition-metal dichalcogenides (TMDs) due to the change of the crystal field originating from their asymmetry structures, the electronic and optical properties of the MoSeTe monolayer in 2H and 1T phases are systematically studied by first-principles calculations, and a detailed comparison with the parental MoSe2 and MoTe2 monolayer is made.


Nanoscale ◽  
2020 ◽  
Vol 12 (34) ◽  
pp. 17754-17761
Author(s):  
Zhuang Luo ◽  
Hao Jia ◽  
Liu Lv ◽  
Quan Wang ◽  
Xiaohong Yan

Two-dimensional transition metal dichalcogenides exhibit promising potential and attract the attention of the world in the application of optoelectronic devices owing to their distinctive physical and chemical properties.


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1778
Author(s):  
Aojie Zhang ◽  
Zihao Wang ◽  
Hao Ouyang ◽  
Wenhao Lyu ◽  
Jingxuan Sun ◽  
...  

Owing to their extraordinary physical and chemical properties, two-dimensional (2D) materials have aroused extensive attention and have been widely used in photonic and optoelectronic devices, catalytic reactions, and biomedicine. In particular, 2D materials possess a unique bandgap structure and nonlinear optical properties, which can be used as saturable absorbers in ultrafast lasers. Here, we mainly review the top-down and bottom-up methods for preparing 2D materials, such as graphene, topological insulators, transition metal dichalcogenides, black phosphorus, and MXenes. Then, we focus on the ultrafast applications of 2D materials at the typical operating wavelengths of 1, 1.5, 2, and 3 μm. The key parameters and output performance of ultrafast pulsed lasers based on 2D materials are discussed. Furthermore, an outlook regarding the fabrication methods and the development of 2D materials in ultrafast photonics is also presented.


Author(s):  
Yang Ma ◽  
Shiyu Xu ◽  
Juntian Wei ◽  
Bin Zhou ◽  
Yongji Gong

Abstract Objectives An avalanche of research has been carried out on two-dimensional (2D) transition metal dichalcogenides (TMDs) due to their potential applications in advanced electronics and flexible devices. To take full use of the emerging 2D TMDs materials, their in-plane/vertical heterostructures have been explored, enabling effective tuning of their physical and chemical properties. However, structural differences between the various phases impede the formation of functional heterostructures. Therefore, robust synthesis strategies for heterostructures with different phases have been explored in this study. Methods A chemical vapor deposition process has been proposed in which the key parameters like reaction sources, deposition sites, etc. have been carefully adjusted, trying to achieve simultaneous synthesis of 1T’/2H in-plane and vertical heterostructures. Results Consequently, 2D in-plane RexMo1-xS2/MoS2 and vertical ReS2/MoS2 heterostructures have been produced in different regions at the same time. Atomic-resolution Z-contrast images reveal the detailed atomic structure of the 1T’/2H interfaces. The lateral interface is found to contain Mo atoms with only 5-fold coordination with S due to the phase mismatch. Conclusion This work demonstrates a route to exploit heterostructures of different phases and opens the possibility to build more complicated 2D heterostructures using CVD.


Author(s):  
Aniceto B. Maghirang ◽  
Zhi-Quan Huang ◽  
Rovi Angelo B. Villaos ◽  
Chia-Hsiu Hsu ◽  
Liang-Ying Feng ◽  
...  

Abstract Ultrathin Janus two-dimensional (2D) materials are attracting intense interest currently. Substitutional doping of 2D transition metal dichalcogenides (TMDs) is of importance for tuning and possible enhancement of their electronic, physical and chemical properties toward industrial applications. Using systematic first-principles computations, we propose a class of Janus 2D materials based on the monolayers MX2 (M = V, Nb, Ta, Tc, or Re; X = S, Se, or Te) with halogen (F, Cl, Br, or I) or pnictogen (N, P, As, Sb, or Bi) substitution. Nontrivial phases are obtained on pnictogen substitution of group VB (V, Nb, or Ta), whereas for group VIIB (Tc or Re), the nontrivial phases are obtained for halogen substitution. Orbital analysis shows that the nontrivial phase is driven by the splitting of M-dyz and M-dxz orbitals. Our study demonstrates that the Janus 2D materials have the tunability and suitability for synthesis under various conditions.


2018 ◽  
Vol 47 (17) ◽  
pp. 6845-6888 ◽  
Author(s):  
Simone Bertolazzi ◽  
Marco Gobbi ◽  
Yuda Zhao ◽  
Claudia Backes ◽  
Paolo Samorì

A variety of molecular chemistry approaches are currently investigated for tailoring the physico-chemical properties of ultrathin transition metal dichalcogenides towards novel hybrid multifunctional materials and devices.


2022 ◽  
Author(s):  
Ye Ming Qing ◽  
Yongze Ren ◽  
Dangyuan Lei ◽  
Hui Feng Ma ◽  
Tie Jun Cui

Abstract Strong interaction between electromagnetic radiation and matter leads to the formation of hybrid light-matter states, making the absorption and emission behavior different from those of the uncoupled states. Strong coupling effect results in the famous Rabi splitting and the emergence of new polaritonic eigenmodes, exhibiting spectral anticrossing behavior and unique energy-transfer properties. In recent years, there has been a rapidly increasing number of works focusing on strong coupling between nanostructures and two-dimensional materials (2DMs), because of the exceptional properties and applications they demonstrate. Here, we review the significant recent advances and important developments of strong light-matter interactions in 2DMs-based nanostructures. We adopt the coupled oscillator model to describe the strong coupling and give an overview of various hybrid nanostructures to realize this regime, including graphene-based nanostructures, black phosphorus-based nanostructures, transition-metal dichalcogenides-based nanostructures, etc. In addition, we discuss potential applications that can benefit from these effects and conclude our review with a perspective on the future of this rapidly emerging field.


Nanoscale ◽  
2021 ◽  
Author(s):  
Zihao He ◽  
Xingyao Gao ◽  
Di Zhang ◽  
Ping Lu ◽  
Xuejing Wang ◽  
...  

Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide...


ChemInform ◽  
2015 ◽  
Vol 46 (27) ◽  
pp. no-no ◽  
Author(s):  
Haotian Wang ◽  
Hongtao Yuan ◽  
Seung Sae Hong ◽  
Yanbin Li ◽  
Yi Cui

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