Strong coupling in two-dimensional materials-based nanostructures: a review

2022 ◽  
Author(s):  
Ye Ming Qing ◽  
Yongze Ren ◽  
Dangyuan Lei ◽  
Hui Feng Ma ◽  
Tie Jun Cui

Abstract Strong interaction between electromagnetic radiation and matter leads to the formation of hybrid light-matter states, making the absorption and emission behavior different from those of the uncoupled states. Strong coupling effect results in the famous Rabi splitting and the emergence of new polaritonic eigenmodes, exhibiting spectral anticrossing behavior and unique energy-transfer properties. In recent years, there has been a rapidly increasing number of works focusing on strong coupling between nanostructures and two-dimensional materials (2DMs), because of the exceptional properties and applications they demonstrate. Here, we review the significant recent advances and important developments of strong light-matter interactions in 2DMs-based nanostructures. We adopt the coupled oscillator model to describe the strong coupling and give an overview of various hybrid nanostructures to realize this regime, including graphene-based nanostructures, black phosphorus-based nanostructures, transition-metal dichalcogenides-based nanostructures, etc. In addition, we discuss potential applications that can benefit from these effects and conclude our review with a perspective on the future of this rapidly emerging field.

Nanoscale ◽  
2021 ◽  
Author(s):  
Zihao He ◽  
Xingyao Gao ◽  
Di Zhang ◽  
Ping Lu ◽  
Xuejing Wang ◽  
...  

Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide...


Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1557-1577 ◽  
Author(s):  
Xianguang Yang ◽  
Baojun Li

AbstractTransition metal dichalcogenides are two-dimensional semiconductors with strong in-plane covalent and weak out-of-plane interactions, resulting in exfoliation into monolayers with atomically thin thickness. This creates a new era for the exploration of two-dimensional physics and device applications. Among them, MoS2 is stable in air and easily available from molybdenite, showing tunable band-gaps in the visible and near-infrared waveband and strong light-matter interactions due to the planar exciton confinement effect. In the single-layer limit, monolayer MoS2 exhibits direct band-gaps and bound excitons, which are fundamentally intriguing for achieving the nanophotonic and optoelectronic applications. In this review, we start from the characterization of monolayer MoS2 in our group and understand the exciton modes, then explore thermal excitons and band renormalization in monolayer MoS2. For nanophotonic applications, the recent progress of nanoscale laser source, exciton-plasmon coupling, photoluminescence manipulation, and the MoS2 integration with nanowires or metasurfaces are overviewed. Because of the benefits brought by the unique electronic and mechanical properties, we also introduce the state of the art of the optoelectronic applications, including photoelectric memory, excitonic transistor, flexible photodetector, and solar cell. The critical applications focused on in this review indicate that MoS2 is a promising material for nanophotonics and optoelectronics.


Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1245 ◽  
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wei Li ◽  
Tao Han

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.


2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Pranab Kumar Das ◽  
D. Di Sante ◽  
I. Vobornik ◽  
J. Fujii ◽  
T. Okuda ◽  
...  

Abstract The behaviour of electrons and holes in a crystal lattice is a fundamental quantum phenomenon, accounting for a rich variety of material properties. Boosted by the remarkable electronic and physical properties of two-dimensional materials such as graphene and topological insulators, transition metal dichalcogenides have recently received renewed attention. In this context, the anomalous bulk properties of semimetallic WTe2 have attracted considerable interest. Here we report angle- and spin-resolved photoemission spectroscopy of WTe2 single crystals, through which we disentangle the role of W and Te atoms in the formation of the band structure and identify the interplay of charge, spin and orbital degrees of freedom. Supported by first-principles calculations and high-resolution surface topography, we reveal the existence of a layer-dependent behaviour. The balance of electron and hole states is found only when considering at least three Te–W–Te layers, showing that the behaviour of WTe2 is not strictly two dimensional.


2021 ◽  
Author(s):  
Mubashir A. Kharadi ◽  
Gul Faroz A. Malik ◽  
Farooq A. Khanday

2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Christian Gebhardt ◽  
Michael Förg ◽  
Hisato Yamaguchi ◽  
Ismail Bilgin ◽  
Aditya D. Mohite ◽  
...  

Abstract Atomically thin crystals of transition metal dichalcogenides (TMDs) host excitons with strong binding energies and sizable light-matter interactions. Coupled to optical cavities, monolayer TMDs routinely reach the regime of strong light-matter coupling, where excitons and photons admix coherently to form polaritons up to room temperature. Here, we explore the two-dimensional nature of TMD polaritons with scanning-cavity hyperspectral imaging. We record a spatial map of polariton properties of extended WS2 monolayers coupled to a tunable micro cavity in the strong coupling regime, and correlate it with maps of exciton extinction and fluorescence taken from the same flake with the cavity. We find a high level of homogeneity, and show that polariton splitting variations are correlated with intrinsic exciton properties such as oscillator strength and linewidth. Moreover, we observe a deviation from thermal equilibrium in the resonant polariton population, which we ascribe to non-Markovian polariton-phonon coupling. Our measurements reveal a promisingly consistent polariton landscape, and highlight the importance of phonons for future polaritonic devices.


Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2337
Author(s):  
Yanying Yu ◽  
Jie Xu ◽  
Jianwei Zhang ◽  
Fan Li ◽  
Jiantao Fu ◽  
...  

Transition-metal dichalcogenides (TMDs) materials have attracted much attention for hydrogen evolution reaction (HER) as a new catalyst, but they still have challenges in poor stability and high reaction over-potential. In this study, Ultra-thin SnS2 nanocatalysts were synthesized by simple hydrothermal method, and low load of Pt was added to form stable SnS2-Pt-3 (the content of platinum is 0.5 wt %). The synergistic effect between ultra-thin SnS2 rich in active sites and individual dispersed Pt nanoclusters can significantly reduce the reaction barrier and further accelerate HER reaction kinetics. Hence, SnS2-Pt-3 exhibits a low overpotential of 210 mV at the current density of 10 mA cm−2. It is worth noting that SnS2-Pt-3 has a small Tafel slope (126 mV dec−1) in 0.5 M H2SO4, as well as stability. This work provides a new option for the application of TMDs materials in efficient hydrogen evolution reaction. Moreover, this method can be easily extended to other catalysts with desired two-dimensional materials.


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