scholarly journals Numerical Investigation of Phononic Crystal Based Film Bulk Acoustic Wave Resonators

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2547
Author(s):  
Linhao Shi ◽  
Weipeng Xuan ◽  
Biao Zhang ◽  
Shurong Dong ◽  
Hao Jin ◽  
...  

Film bulk acoustic resonator (FBAR)-based filters have attracted great attention because they can be used to build high-performance RF filters with low cost and small device size. Generally, FBARs employ the air cavity and Bragg mirror to confine the acoustic energy within the piezoelectric layer, so as to achieve high quality factors and low insertion loss. Here, two-dimensional (2D) phononic crystals (PhCs) are proposed to be the acoustic energy reflection layer for an FBAR (PhC-FBAR). Four kinds of PhC structures are investigated, and their bandgap diagrams and acoustic wave reflection coefficients are analyzed using the finite element method (FEM). Then, the PhCs are used as the acoustic wave reflectors at the bottom of the piezoelectric stack, with high reflectivity for elastic waves in the specific frequency range. The results show that the specific PhC possesses a wide bandgap, which enables the PhC-FBAR to work at a broad frequency range. Furthermore, the impedance spectra of PhC-FBARs are very smooth with few spurious modes, and the quality factors are close to those of traditional FBARs with air cavities, showing the application potential of the PhC-FBAR filters with wide bandwidth and high power capability.

2003 ◽  
Vol 783 ◽  
Author(s):  
H. P. Loebl ◽  
C. Metzmacher ◽  
R. F. Milsom ◽  
A. Tuinhout ◽  
P. Lok ◽  
...  

ABSTRACTSelective RF filters based on solidly mounted thin film bulk acoustic wave resonator filters (SMR filters) are of great interest for mobile and wireless applications in the GHz frequency range. They are small in size, robust and can be integrated on silicon. The SMR configuration comprises a textured piezoelectric layer of AlN or ZnO sandwiched between two electrodes, and an acoustic reflector, which confines the acoustic energy in the resonator region. The bulk acoustic wave (BAW) resonators are exited in the thickness extensional mode. In these paper examples of BAW resonators and filters for the frequency range between 1 and 8 GHz are shown. It will become clear that precise control of AlN film growth is very important. Modelling the resonator performance using a 1-dimensional electro acoustical model allows the extraction of important thin film parameters and thus simulation of the filter performance. Limitations of the 1-D model are discussed.


2012 ◽  
Vol 433-440 ◽  
pp. 7579-7582
Author(s):  
B Venkatalakshmi ◽  
K Radhika

Low power and portable systems working at high frequency are becoming a significant force in the communication industry. SAW filters have been used in wireless communication systems since the early days of mobile phones. But applications at the higher handset frequencies run up against the capability of conventional SAW structures. Bulk Acoustic Wave (BAW) Technology, a relatively recent addition to this portfolio follows MEMS principle to design high performance microwave components for RF communication. Simulation of the Bulk Acoustic Resonator using Butterworth Van Dyke Model (BVD) Model and design of Ladder Filter with the designed resonator in the RF design platform Agilent ADS (Advanced Design System) have been presented. The simulated results confirm the tuning of operating frequency of designed BAW device at 2.4 GHz.


2007 ◽  
Vol 46 (4A) ◽  
pp. 1392-1397 ◽  
Author(s):  
Kuan-Hsun Chiu ◽  
Hong-Ren Chen ◽  
Star Ruey-Shing Huang

2014 ◽  
Vol 24 (02) ◽  
pp. 1550018
Author(s):  
Tingting Lu ◽  
Shuai Wang ◽  
Hao Zhang ◽  
Lingwei Xu ◽  
T. Aaron Gulliver

Based on the thin-film bulk acoustic resonator (FBAR) technology, a new narrow-band bulk acoustic wave (BAW) filter for Beidou B1 band receiver is designed. The aluminum nitride thin film is used as a piezoelectric layer. The Mason model of air-gap TFBAR (AGR) resonators is established in advanced design system to investigate the relationship between electrical impedance and physical parameters. The simulation results illustrate the effect of the area of parallel unit and the number of resonators on the performance of the BAW filters. By changing the series-parallel unit series and area ratio, the pass band of the BAW filter can reach 1556–1566 MHz, and the out-of-band rejection and the insertion loss can reach 47.5 dB and 3.0 dB, respectively.


2014 ◽  
Vol 105 (16) ◽  
pp. 162910 ◽  
Author(s):  
Andrey Kozyrev ◽  
Anatoly Mikhailov ◽  
Sergey Ptashnik ◽  
Peter K. Petrov ◽  
Neil Alford

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