scholarly journals Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2759
Author(s):  
Jonghwan Lee
Keyword(s):  
Analytical Model ◽  
Shot Noise ◽  
Tunneling Current ◽  
Fano Factor ◽  
Unified Model ◽  
Analytical Formulation ◽  
Landauer Formula ◽  
Gate Tunneling ◽  
Tunneling Currents ◽  
Ultrathin Oxide

A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents.

scholarly journals Physics-Informed Neural Network for High Frequency Noise Performance in Quasi-Ballistic MOSFETs

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2219
Author(s):  
Jonghwan Lee
Keyword(s):  
Neural Network ◽  
Shot Noise ◽  
High Frequency ◽  
Equivalent Circuit Model ◽  
Tunneling Current ◽  
Fano Factor ◽  
Channel Noise ◽  
Frequency Noise ◽  
Noise Performance ◽  
Noise Sources

A physics-informed neural network (PINN) model is presented to predict the nonlinear characteristics of high frequency (HF) noise performance in quasi-ballistic MOSFETs. The PINN model is formulated by combining the radial basis function-artificial neural networks (RBF-ANNs) with an improved noise equivalent circuit model, including all the noise sources. The RBF-ANNs are utilized to model the thermal channel noise, induced gate noise, correlation noise, as well as the shot noise, due to the gate and source-drain tunneling current through the potential barriers. By training a spatial distribution of the thermal channel noise and a Fano factor of the shot noise, underlying physical theories are naturally embedded into the PINN model as prior information. The PINN model shows good capability of predicting the noise performance at high frequencies.

An analytical gate tunneling current model for MOSFETs

2012 ◽  
Vol 46 (3) ◽  
pp. 386-390 ◽  
Author(s):  
Iman Abaspur Kazerouni ◽  
Seyed Ebrahim Hosseini
Keyword(s):  
Current Model ◽  
Tunneling Current ◽  
Gate Tunneling

Resonant gate tunneling current in double-gate SOI: a simulation study

2003 ◽  
Vol 50 (12) ◽  
pp. 2579-2581 ◽  
Author(s):  
Chang-Hoon Choi ◽  
Zhiping Yu ◽  
R.W. Dutton
Keyword(s):  
Simulation Study ◽  
Tunneling Current ◽  
Double Gate ◽  
Gate Tunneling

Analytical model of the “Shot Noise” effect in photoresist

1999 ◽  
Vol 46 (1-4) ◽  
pp. 365-368 ◽  
Author(s):  
Gregg M. Gallatin ◽  
J. Alexander Liddle
Keyword(s):  
Analytical Model ◽  
Shot Noise ◽  
Noise Effect
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