scholarly journals Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3316
Author(s):  
Emanuela Schilirò ◽  
Filippo Giannazzo ◽  
Salvatore Di Franco ◽  
Giuseppe Greco ◽  
Patrick Fiorenza ◽  
...  

This paper reports an investigation of the structural, chemical and electrical properties of ultra-thin (5 nm) aluminum nitride (AlN) films grown by plasma enhanced atomic layer deposition (PE-ALD) on gallium nitride (GaN). A uniform and conformal coverage of the GaN substrate was demonstrated by morphological analyses of as-deposited AlN films. Transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) analyses showed a sharp epitaxial interface with GaN for the first AlN atomic layers, while a deviation from the perfect wurtzite stacking and oxygen contamination were detected in the upper part of the film. This epitaxial interface resulted in the formation of a two-dimensional electron gas (2DEG) with a sheet charge density ns ≈ 1.45 × 1012 cm−2, revealed by Hg-probe capacitance–voltage (C–V) analyses. Nanoscale resolution current mapping and current–voltage (I–V) measurements by conductive atomic force microscopy (C-AFM) showed a highly homogeneous current transport through the 5 nm AlN barrier, while a uniform flat-band voltage (VFB ≈ 0.3 V) for the AlN/GaN heterostructure was demonstrated by scanning capacitance microscopy (SCM). Electron transport through the AlN film was shown to follow the Fowler–Nordheim (FN) tunneling mechanism with an average barrier height of <ΦB> = 2.08 eV, in good agreement with the expected AlN/GaN conduction band offset.

2018 ◽  
Vol 88 (8) ◽  
pp. 1699-1706 ◽  
Author(s):  
A. I. Abdulagatov ◽  
R. R. Amashaev ◽  
Kr. N. Ashurbekova ◽  
K. N. Ashurbekova ◽  
M. Kh. Rabadanov ◽  
...  

2018 ◽  
Vol 47 (2) ◽  
pp. 118-130 ◽  
Author(s):  
A. I. Abdulagatov ◽  
Sh. M. Ramazanov ◽  
R. S. Dallaev ◽  
E. K. Murliev ◽  
D. K. Palchaev ◽  
...  

2015 ◽  
Vol 1088 ◽  
pp. 107-111
Author(s):  
Jian Shuang Liu ◽  
Fang Fang Zhu ◽  
Fei Lu ◽  
Lin Zhang

A plasma enhanced atomic layer deposition process has been demonstrated for Lanthanum oxide films using La (thd)3 precursor and oxygen plasma. The chemical and electrical properties of La2O3 ultra-thin films on Si (100) substrates before and after post-annealing in N2 ambient have been investigated. X-ray photoelectron spectroscopic revealed that interface reactions take place after annealing process which lead to oxygen insufficiency, as well as the balance band offset decreases with the increase of annealing temperature. The capacitance-voltage and current-voltage characteristics show La2O3 capacitors annealed at 900 °C have negligible hysteresis, smaller interface trap density in comparison with as-deposited samples, but larger flat band voltage and higher gate-leakage current density due to the appearance of oxygen vacancy in the La2O3 films.


2020 ◽  
Vol 38 (2) ◽  
pp. 022419
Author(s):  
David Dustin Fischer ◽  
Martin Knaut ◽  
Johanna Reif ◽  
Frederik Nehm ◽  
Matthias Albert ◽  
...  

2018 ◽  
Vol 347 ◽  
pp. 181-190 ◽  
Author(s):  
L. Tian ◽  
S. Ponton ◽  
M. Benz ◽  
A. Crisci ◽  
R. Reboud ◽  
...  

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