scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

scholarly journals Oriented hexagonal ferrite thin films prepared by chemical solution deposition

2014 ◽  
Vol 70 (a1) ◽  
pp. C725-C725
Author(s):  
Josef Bursik ◽  
Radomir Kuzel ◽  
Karel Knizek ◽  
Ivo Drbohlav
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Sol Gel ◽  
Hexagonal Ferrite ◽  
Material System ◽  
Chemical Solution ◽  
Solution Deposition

Hexagonal ferrites (M, Y, Z-type) represent a new diverse class of magnetoelectric (ME) multiferroics, where ME effect is driven by complex magnetic order. Integration of ME materials with standard semiconductor technology is important for ultimate realization of ME functionalities. They have the potential to display ME coupling under low magnetic field bias and at temperatures close to room temperature. Methods based on sol–gel transition offer possibility of low cost and efficient way for the evaluation of new material system. The single phase, epitaxial thin films of Y-type hexagonal ferrite has been prepared and studied. Thin films of Ba2Zn2Fe12O22(Y) hexaferrite were prepared through the chemical solution deposition method on SrTiO3(111)(ST) single crystal substrates using epitaxial SrFe12O19(M) hexaferrite thin layer as a seed template layer. The process of crystallization was mainly investigated by means of X-ray diffraction and atomic force microscopy. A detailed inspection revealed that growth of seed layer starts through the break-up of initially continuous film into high density of well-oriented isolated grains with expressive shape anisotropy and hexagonal habit.The vital parameters of the seed layer, i.e. thickness, substrate coverage,crystallization conditions and temperature ramp were optimized with the aim to obtain epitaxially crystallized Y phase. By overcoating this seed layer, Y phase prepared under optimum deposition and heat treatment conditions presents a (001) orientation perpendicular to the substrate. Perfect parallel in-plane alignment of the hexagonal cells of SrTiO3substrate and both hexaferrite phases was proved by fast ω and φ scan measurements on sets of several diffraction planes at asymmetric orientations, and also by pole figures. The soft magnetic character and existence of pronounced magnetic anisotropy in Y films were confirmed by room temperature measurements of magnetization.

Thermoelectric properties of thin films of bismuth telluride electrochemically deposited on stainless steel substrates

2011 ◽  
Vol 56 (11) ◽  
pp. 4216-4223 ◽  
Author(s):  
Yi Ma ◽  
Elisabet Ahlberg ◽  
Ye Sun ◽  
Bo Brummerstedt Iversen ◽  
Anders E.C. Palmqvist
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Electrochemically Deposited ◽  
Steel Substrates

scholarly journals H2O2Treatment of Electrochemically Deposited Cu2O Thin Films for Enhancing Optical Absorption

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Ying Song ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Fixed Temperature ◽  
Electrochemically Deposited ◽  
Oxygen Ratio ◽  
Copper Oxide Thin Film

Cu2O is considered to be promising as an absorber layer material of solar cells, but its band gap (about 2.1 eV) is larger than the optimum one (about 1.5 eV). CuO has a smaller band gap of about 1.35 eV. Therefore, we attempted to oxidize Cu2O using H2O2to increase oxygen ratio and decrease band gap. Cu2O thin films were deposited on indium-tin-oxide-coated glass from an aqueous solution containing CuSO4, lactic acid, and KOH by the galvanostatic electrochemical deposition at 40°C with current density of −1 mA/cm2. Then, the as-prepared copper oxide thin film was dipped in H2O2(30%) at fixed temperature to oxidize for some time. By the H2O2treatment at room temperature, the oxygen content was increased, and the band gap was decreased.

scholarly journals Room-Temperature Solution-Processed 0D/1D Bilayer Electrodes for Translucent CsPbBr3 Perovskite Photovoltaics

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1489
Author(s):  
Bhaskar Parida ◽  
Saemon Yoon ◽  
Dong-Won Kang
Keyword(s):  
Solar Cells ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Perovskite Solar Cells ◽  
Ambient Air ◽  
Plasma Damage ◽  
Temperature Solution ◽  
Ito Nanoparticles

Materials and processing of transparent electrodes (TEs) are key factors to creating high-performance translucent perovskite solar cells. To date, sputtered indium tin oxide (ITO) has been a general option for a rear TE of translucent solar cells. However, it requires a rather high cost due to vacuum process and also typically causes plasma damage to the underlying layer. Therefore, we introduced TE based on ITO nanoparticles (ITO-NPs) by solution processing in ambient air without any heat treatment. As it reveals insufficient conductivity, Ag nanowires (Ag-NWs) are additionally coated. The ITO-NPs/Ag-NW (0D/1D) bilayer TE exhibits a better figure of merit than sputtered ITO. After constructing CsPbBr3 perovskite solar cells, the device with 0D/1D TE offers similar average visible transmission with the cells with sputtered ITO. More interestingly, the power conversion efficiency of 0D/1D TE device was 5.64%, which outperforms the cell (4.14%) made with sputtered-ITO. These impressive findings could open up a new pathway for the development of low-cost, translucent solar cells with quick processing under ambient air at room temperature.

Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Temperature Reduction

Fabrication of Organic Small Molecular Thin Films based on Ultrasonic Spray-Assisted Vapor-Deposition Method

2012 ◽  
Vol 1400 ◽  
Author(s):  
Jinchun Piao ◽  
Shigetaka Katori ◽  
Takumi Ikenoue ◽  
Shizuo Fujita
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Vapor Deposition ◽  
Low Cost ◽  
Device Fabrication ◽  
Deposition Method ◽  
Material Loss ◽  
Good Surface ◽  
Low Leakage ◽  
Molecular Thin Films

ABSTRACTSmall molecular thin films using solution-based method is a challengeable subject in organic optical and electronic devices. In our previous research, we successfully deposited aluminum tris(8-hydroxyquinoline) (Alq3) films on glass substrate. In this paper, aiming at future exploration of electroluminescent devices, we deposited N, N ’-Bis(3-methylphenyl)-N,N’- diphenylbenzidine) (TPD) films on indium-tin-oxide (ITO) substrates using the vapor-deposition method. Photoluminescence characteristics evidenced the actual formation of TPD thin films. Together with the good surface morphology and low leakage current of the films, the results are promising for actual device fabrication at low cost and low material loss.

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