scholarly journals Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3414
Author(s):  
Tillmann ◽  
Kokalj ◽  
Stangier ◽  
Schöppner ◽  
Malatyali
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Reaction Time ◽  
Seebeck Coefficient ◽  
Physical Structure ◽  
Boron Carbonitride ◽  
Deposition Parameters ◽  
Thin Film Thermocouples ◽  
Nitride Layers ◽  
The Impact

Thin film thermocouples are widely used for local temperature determinations of surfaces. However, depending on the environment in which they are used, thin film thermocouples need to be covered by a wear or oxidation resistant top layer. With regard to the utilization in wide-slit nozzles for plastic extrusion, Ni/Ni-20Cr thin film thermocouples were manufactured using direct-current (DC) magnetron sputtering combined with Aluminiumnitride (AlN) and Boron-Carbonitride (BCN) thin films. On the one hand, the deposition parameters of the nitride layers were varied to affect the chemical composition and morphology of the AlN and BCN thin films. On the other hand, the position of the nitride layers (below the thermocouple, above the thermocouple, around the thermocouple) was changed. Both factors were investigated concerning the influence on the Seebeck coefficient and the reaction behaviour of the thermocouples. Therefore, the impact of the nitride thin films on the morphology, physical structure, crystallite size, electrical resistance and hardness of the Ni and Ni-20Cr thin films is analysed. The investigations reveal that the Seebeck coefficient is not affected by the different architectures of the thermocouples. Nevertheless, the reaction time of the thermocouples can be significantly improved by adding a thermal conductive top coat over the thin films, whereas the top coat should have a coarse structure and low nitrogen content.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Conductivity of Yittria-Stabilized Zirconia Nanostructure Electrolyte for Solid Oxide Fuel Cell Application by Using RF Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 352-357
Author(s):  
S.Y. Jaffar ◽  
Yussof Wahab ◽  
Rosnita Muhammad ◽  
Z. Othaman ◽  
Zuhairi Ibrahim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Stabilized Zirconia ◽  
Deposition Parameter ◽  
Deposition Parameters ◽  
Ysz Thin Film ◽  
Temperature Rate ◽  
Lower Temperature

Yttria-stabilized zirconia (YSZ) thin films were deposited successfully using RF magnetron sputtering. The substrate had been used are sapphire glass. A pure ceramic of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-O nanostructure. The aim of this research is to study the conductivity and roughness YSZ thin film by using RF magnetron sputtering by varying the temperature deposition parameter. By lowering the YSZ thin film into nanostructure would enable for SOFC to be operate at lower temperature below 400°C. The YSZ nanostructure were controlled by varying the deposition parameters, including the deposition temperature and the substrate used. The crystalline of YSZ structure at 100W and temperature 300°C. The surface morphology of the films proved that at 300°C temperature rate deposition showed optimum growth morphology and density of YSZ thin films. Besides, the high deposition subtrate temperature affected the thickness of YSZ thin film at 80nm by using surface profiler. A higher rate of deposition is achievable when the sputtering mode of the Zr-Y target is metallic as opposed to oxide. YSZ is synthesizing to obtain the optimum thin film for SOFC application.

scholarly journals An Integrated Cleanroom Process for the Vapor Phase Deposition of Large-Area Zeolitic Imidazolate Framework Thin Films

2019 ◽  
Author(s):  
Alexander John Cruz ◽  
Ivo Stassen ◽  
Mikhail Krishtab ◽  
Kristof Marcoen ◽  
Timothée Stassin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ex Situ ◽  
Test Case ◽  
Large Area ◽  
Zeolitic Imidazolate Framework ◽  
Deposition Parameters ◽  
The Impact

<p>Robust and scalable thin film deposition methods are key to realize the potential of metal-organic frameworks (MOFs) in electronic devices. Here, we report the first integration of the chemical vapor deposition (CVD) of MOF coatings in a custom reactor within a cleanroom setting. As a test case, the MOF-CVD conditions for ZIF-8 are optimized to enable smooth, pinhole-free, and uniform thin films on full 200 mm wafers under mild conditions. The single-chamber MOF-CVD process and the impact of the deposition parameters are elucidated <i>via</i> a combination of <i>in situ </i>monitoring and <i>ex situ</i> characterization. The resulting process guidelines will pave the way for new MOF-CVD formulations and a plethora of MOF-based devices.<br></p>

scholarly journals A Molecular Dynamics Investigation of the Temperature Effect on the Mechanical Properties of Selected Thin Films for Hydrogen Separation

Membranes ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 241
Author(s):  
Sunday Temitope Oyinbo ◽  
Tien-Chien Jen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Characteristics ◽  
Loading Rate ◽  
Indentation Load ◽  
Nanoindentation Test ◽  
Film Hardness ◽  
Loading And Unloading ◽  
Effects Of Temperature ◽  
The Impact

In this study, we performed nanoindentation test using the molecular dynamic (MD) approach on a selected thin film of palladium, vanadium, copper and niobium coated on the vanadium substrate at a loading rate of 0.5 Å/ps. The thermosetting control is applied with temperature variance from 300 to 700 K to study the mechanical characteristics of the selected thin films. The effects of temperature on the structure of the material, piling-up phenomena and sinking-in occurrence were considered. The simulation results of the analysis and the experimental results published in this literature were well correlated. The analysis of temperature demonstrated an understanding of the impact of the behaviour. As the temperature decreases, the indentation load increases for loading and unloading processes. Hence, this increases the strength of the material. In addition, the results demonstrate that the modulus of elasticity and thin-film hardness decreases in the order of niobium, vanadium, copper and palladium as the temperature increases.

Fabrication of Amorphous Carbon Thin Film from CH4 Using PEVCD

2019 ◽  
Vol 966 ◽  
pp. 95-99
Author(s):  
Budhi Priyanto ◽  
Muh Saleh ◽  
Sarayut Tunmee ◽  
Chanan Euaruksakul ◽  
Yoyok Cahyono ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Carbon ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Gas Flows ◽  
Rf Power ◽  
Methane Gas ◽  
Deposition Parameters ◽  
Frequency Plasma

Thin films of amorphous carbon have successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD). Carbon film fabrication with a methane gas (CH4) source has been fabricated with deposition parameters: 15 Watt of RF power, 13.5 MHz of frequency, 100 °C of substrate temperature, 450 m Torr of pressure and 120 minutes of deposition time. Methane gas flows were 40, 60, 80 sccm, respectively. Thin film can be in the form of DLC, Graphite or Amorphous Carbon depending on the ratio of hybridized orbitals of sp3, sp2 and sp. The X-ray diffractrometry (XRD) show the amorphous phase of the thin film has been formed. Further analysis using Fourier transform infrared (FTIR) combined with synchrotron photoemission spectroscopy (PES) showed that the sp3 hybridization was more dominant than sp2. This gives an indication that as fabricated thin films are tetrahedrally amorphous carbon (ta-C). Keywords: Amorphous carbon, methane gas, thin film.

Structural and Texture Studies of PbS Thin Film

2010 ◽  
Vol 442 ◽  
pp. 123-129 ◽  
Author(s):  
S.K. Mehmood ◽  
S. Zaman ◽  
K. Ahmed ◽  
M.M. Asim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Thermal Treatment ◽  
Hydrazine Hydrate ◽  
Structural Parameters ◽  
Glass Substrates ◽  
Deposition Parameters ◽  
Cubic Structure ◽  
Post Deposition

In this study, we report on the structural parameters and texture development which occurred during deposition and annealing of PbS films and their effect on optical properties. The films under study were deposited on glass substrates through chemical bath method. The reactive substances used to obtain the PbS layers were lead accetae trihydrated, thiourea and hydrazine hydrate. The films were prepared with one molar bath concentration and for various deposition times. The data showed that as-prepared and annealed thin films are polycrystalline with cubic structure and predominantly textured along 100. Results showed that thinner films are more prone to post deposition heat treatments as compared to thicker ones. Deposition parameters and thermal treatment strongly influence the optical properties of PbS films.

The Influence of CuCl Treatment on the PL Spectra of CdTe Thin Film, Component of CdS/CdTe Heterojunctions

2009 ◽  
Vol 1165 ◽  
Author(s):  
Sergiu A Vatavu ◽  
Hehong Zhao ◽  
Iuliana M Caraman ◽  
Petru A Gasin ◽  
Don L Morel ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Comparative Analysis ◽  
Low Temperature ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film ◽  
Deposition Parameters ◽  
Cdte Thin Films ◽  
Low Temperature Photoluminescence

AbstractTechnology variations involving Cu and Cl impurities are among the major performance influencing factors for CdS/CdTe thin film solar cells. CuCl and CdCl2 influence on the energetic diagram of impurity levels with respect to variation of deposition parameters has been investigated. A comparative analysis has been carried out by using low temperature photoluminescence (PL) studies (17-98K) of CdTe thin films in the device configuration (from CdS/CdTe inteface and CdTe sides). To study the effect of CuCl influence, as-deposited, annealed heterojunctions, with CuCl treatment of CdS have been investigated.

The Influence of Electrodes Deposition on the Interface and Dielectric Characteristics of Polymer Gate for Thin Films Transistors

2017 ◽  
Vol 1143 ◽  
pp. 227-232
Author(s):  
Elena Emanuela Herbei ◽  
Michael P.M. Jank ◽  
Susanne Oertel ◽  
Laurentiu Frangu ◽  
Viorica Mușat
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Rate ◽  
Physical Vapor Deposition ◽  
Metal Electrode ◽  
Electrical Performance ◽  
Pmma Film ◽  
Pmma Layer ◽  
Deposition Parameters ◽  
Dielectric Performance

The paper presents some results on the effect of the metal electrode deposition on the electrical performance of amorphous polymthylmetacrylate (PMMA) thin films, measured in a MIM structure consisting of metal (Al)-insulator (PMMA)-metal (Ta). Aluminium (Al) electrode was deposited by physical vapor deposition method (PVD) on the top of PMMA film with the deposition rate of 5 and 10Å/s. The effect of aluminium deposition rate and post deposition annealing temperature on the morphology of the interface between Al electrode (100 or 300 nm thick) and PMMA thin film (40 or 70 nm thick) has been investigated by cross-section scanning electron microscopy (SEM). Based on SEM data, I-V characteristic measurements and dielectric constant values of insulating films, the deposition parameters of Al top-electrode was optimised. Our results showed that when the deposition of the Al electrode take place at a rate of 10 Å/s, no inter-diffusion or interfacial reaction at the interface between Al electrode and PMMA films were observed and the best delectric parameters of PMMA thin film were measured, which led to the best dielectric performance of PMMA layer in TFT configuration.

Bi-Sb-Te Based Thin Film Thermoelectric Generator

2012 ◽  
Vol 538-541 ◽  
pp. 60-63 ◽  
Author(s):  
Zhao Kun Cai ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Xing Min Cai ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Seebeck Coefficient ◽  
Output Power ◽  
Power Factor ◽  
Thermoelectric Generator ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thermoelectric Thin Films ◽  
P Type

N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films have been prepared by RF and DC co-sputtering. The Seebeck coefficient of n-type Bi2Te3 and p-type Sb2Te3 thin films is about -122 μVK-1 and 108 μVK-1, the power factor is about 0.82×10-3 Wm-1K-2 and 1.60×10-3 Wm-1K-2. Then, the films have been selected to fabricate the thin film thermoelectric generator. The results show that the open-circuit voltage of 12.2 mV and the output power of 3.32 μW are obtained for a thin film generator with the temperature difference at 60 K.

Physical Structure and the Electrochromic effect in Tungsten Oxide Films

1983 ◽  
Vol 24 ◽  
Author(s):  
A. P. Giri ◽  
R. Messier
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Tungsten Oxide ◽  
Physical Structure ◽  
Structure Property ◽  
Electrochromic Devices ◽  
Tungsten Oxide Thin Films ◽  
Electrochromic Effect ◽  
Evolutionary Growth

ABSTRACTIn all previous studies of tungsten oxide films it has been implicitly assumed that the film is uniform except for grain boundaries in polycrystalline films. In this study we show that amorphous tungsten oxide thin films contain highly anisotropic void networks which not only dominate their physical structure but also control their electrochromic behaviour. The void network structure is controlled primarily through ion bombardment of the growing film during deposition while the film stoichiometry HyWO3−x is controlled by the reactive sputtering processes of tungsten in Ar/O2/H2 atmospheres. The evolutionary growth model of physical structure was studied in detail by both transmission and scanning electron microscopy. On the basis of physical structure-property correlations we are able to consistently explain the basic electrochromic characteristics and chemical stability of the films. Such information leads to better understanding of the problems and limitations inherent in thin film electrochromic devices.

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