scholarly journals Prototype of Nitro Compound Vapor and Trace Detector Based on a Capacitive MIS Sensor

Sensors ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 1514 ◽  
Author(s):  
Nikolay Samotaev ◽  
Artur Litvinov ◽  
Maya Etrekova ◽  
Konstantin Oblov ◽  
Dmitrii Filipchuk ◽  
...  
Keyword(s):  
Detection Limit ◽  
Response Time ◽  
Gas Sensor ◽  
Nitro Compound ◽  
Structure Type ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Pyrolysis Method ◽  
Prototype Detector

A prototype of a nitro compound vapor and trace detector, which uses the pyrolysis method and a capacitive gas sensor based on the metal–insulator–semiconductor (MIS) structure type Pd–SiO2–Si, was developed and manufactured. It was experimentally established that the detection limit of trinitrotoluene trace for the detector prototype is 1 × 10−9 g, which corresponds to concentration from 10−11 g/cm3 to 10−12 g/cm3. The prototype had a response time of no more than 30 s. The possibility of further improving the characteristics of the prototype detector by reducing the overall dimensions and increasing the sensitivity of the MIS sensors is shown.

scholarly journals Using Field-Effect Gas Sensors for Monitoring H2 in Transformer Oil

2020 ◽  
Vol 327 ◽  
pp. 01005
Author(s):  
Artur Litvinov ◽  
Nikolay Samotaev ◽  
Maya Etrekova ◽  
Anastasia Ivanova ◽  
Dmitriy Filipchuk ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Field Effect ◽  
Semiconductor Structure ◽  
Transformer Oil ◽  
Ceramic Surface ◽  
Voltage Transformer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Highly Sensitive ◽  
High Voltage Transformer

Hydrogen can be released during the thermal decomposition of organic materials, therefore, monitoring its level in the working industrial high-voltage transformer oil allows you to identify the development of degenerative processes in advance, because these processes can lead to an accident in the future. In experiments has shown that highly sensitive and small-sized field effect gas sensor based on the metal-insulator-semiconductor structure can be used for measuring of Hydrogen in oil with direct contact of its structure with transformer oil. Given the harsh environmental conditions of hydrogen measurement the field effect capacity type gas sensor were fabricated by using laser micromilling technique for fabrication compact ceramic surface mounting device package and microheater for sustentation working temperature of metal-insulator-semiconductor structure.

Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure

1982 ◽  
Author(s):  
Yoshihiro Miyamoto ◽  
Tohru Maekawa ◽  
Toshiro Yamamoto ◽  
Kunihiro Tanikawa ◽  
Hiroshi Takigawa ◽  
...  
Keyword(s):  
Focal Plane ◽  
Evaluation Method ◽  
Focal Plane Arrays ◽  
Mis Structure ◽  
Infrared Focal Plane Arrays ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

scholarly journals Highly active and porous single-crystal In2O3 nanosheet for NOx gas sensor with excellent response at room temperature

RSC Advances ◽  
2017 ◽  
Vol 7 (53) ◽  
pp. 33419-33425 ◽  
Author(s):  
Li Sun ◽  
Wencheng Fang ◽  
Ying Yang ◽  
Hui Yu ◽  
Tingting Wang ◽  
...  
Keyword(s):  
Detection Limit ◽  
Response Time ◽  
Single Crystal ◽  
Gas Sensor ◽  
Room Temperature ◽  
Fast Response ◽  
Fast Response Time ◽  
Excellent Response ◽  
Highly Active ◽  
Nox Gas Sensor

Porous single-crystal In2O3 nanosheet was well-designed and prepared through calcination after liquid reflux, then exhibited a distinguished response, fast response time to NOx with good selectivity and low detection limit at room temperature.

Electrical properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN metal–insulator–semiconductor (MIS) structure

2014 ◽  
Vol 29 (7) ◽  
pp. 075001 ◽  
Author(s):  
V Rajagopal Reddy ◽  
V Janardhanam ◽  
Jin-Woo Ju ◽  
Hyobong Hong ◽  
Chel-Jong Choi
Keyword(s):  
Electrical Properties ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

An In2O3 nanorod-decorated reduced graphene oxide composite as a high-response NOx gas sensor at room temperature

2017 ◽  
Vol 41 (15) ◽  
pp. 7517-7523 ◽  
Author(s):  
Wencheng Fang ◽  
Ying Yang ◽  
Hui Yu ◽  
Xiangting Dong ◽  
Ruihong Wang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Detection Limit ◽  
Response Time ◽  
Reduced Graphene Oxide ◽  
Gas Sensor ◽  
Room Temperature ◽  
Fast Response ◽  
Oxide Composite ◽  
Reduced Graphene ◽  
Nox Gas Sensor

An In2O3 nanorod-decorated reduced graphene oxide composite has been successfully synthesized, and this composite shows a good response, fast response time to NOx with good selectivity and low detection limit at room temperature.

Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

1996 ◽  
Vol 448 ◽  
Author(s):  
D.G. Park ◽  
D. M. Diatezua ◽  
Z. Chen ◽  
S. N. Mohammad ◽  
H. Morkoç
Keyword(s):  
Molecular Beam ◽  
Surface States ◽  
Chemical Vapor ◽  
Conduction Band Edge ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Field Excursion

AbstractWe present characteristics of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques . The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575°C and 625°C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625°C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors

2005 ◽  
Vol 80 ◽  
pp. 34-37 ◽  
Author(s):  
A. Dimoulas ◽  
G. Vellianitis ◽  
G. Mavrou ◽  
E.K. Evangelou ◽  
K. Argyropoulos ◽  
...  
Keyword(s):  
Response Time ◽  
Minority Carrier ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

scholarly journals Charge density at the Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Si interface in Metal-Insulator-Semiconductor devices: semiclassical and quantum mechanical descriptions

2017 ◽  
Vol 51 (12) ◽  
pp. 1682
Author(s):  
Slah Hlali ◽  
Neila Hizem ◽  
Adel Kalboussi
Keyword(s):  
Charge Density ◽  
Inversion Layer ◽  
Quantum Mechanical ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
High K ◽  
P Type ◽  
Different Thickness ◽  
Mechanical Charge

In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal-Insulator-Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al2O3/Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi--Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C-V), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device. DOI: 10.21883/FTP.2017.12.45185.8190

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