scholarly journals Magnesium Zirconate Titanate Thin Films Used as an NO2 Sensing Layer for Gas Sensor Applications Developed Using a Sol–Gel Method

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2825
Author(s):  
Pei-Shan Huang ◽  
Ke-Jing Lee ◽  
Yeong-Her Wang

Magnesium zirconate titanate (MZT) thin films, used as a sensing layer on Al interdigitated electrodes prepared using a sol–gel spin-coating method, are demonstrated in this study. The p-type MZT/Al/SiO2/Si structure for sensing NO2 is also discussed. The results indicated that the best sensitivity of the gas sensor occurred when it was operating at a temperature ranging from 100 to 150 °C. The detection limit of the sensor was as low as 250 ppb. The sensitivity of the MZT thin film was 8.64% and 34.22% for 0.25 ppm and 5 ppm of NO2 gas molecules at a working temperature of 150 °C, respectively. The gas sensor also exhibited high repeatability and selectivity for NO2. The response values to 250, 500, 1000, 1500, 2000, 2500, and 5000 ppb NO2 at 150 °C were 8.64, 9.52, 12, 16.63, 20.3, 23, and 34.22%, respectively. Additionally, we observed a high sensing linearity in NO2 gas molecules. These results indicate that MZT-based materials have potential applications for use as gas sensors.

2000 ◽  
Vol 68 (1-3) ◽  
pp. 189-196 ◽  
Author(s):  
C Garzella ◽  
E Comini ◽  
E Tempesti ◽  
C Frigeri ◽  
G Sberveglieri

2018 ◽  
Vol 36 (2) ◽  
pp. 235-241 ◽  
Author(s):  
Ziaul Raza Khan ◽  
Anver Aziz ◽  
Mohd. Shahid Khan ◽  

Abstract High-quality CdS nanocrystalline thin films were grown by sol-gel spin coating method at different solution temperatures on glass substrates. As-deposited films exhibited nanocrystalline phase with hexagonal wurtzite structure and showed good adhesion and smooth surface morphology. It was clearly observed that the crystallinity of the thin films improved with the increase in solution temperature. Crystallites sizes of the films also increased and were found to be in the range of 10 mm to 17 nm. The influence of the growth mechanism on the band and sub-band gap absorption of the films was investigated using UV-Vis and photothermal deflection spectroscopy (PDS). The band gap values were calculated in the range of 2.52 eV to 2.75 eV. The band gap decreased up to 9 % with the increase in solution temperature from 45 °C to 75 °C. Absorption coefficients estimated by PDS signal showed the significant absorption in low photon energy region of 1.5 eV to 2.0 eV. The dark and illuminated I-V characteristics revealed that the films were highly photosensitive. The results demonstrated the potential applications of sol-gel grown CdS nanocrystalline thin films as photoconductors and optical switches.


2013 ◽  
Vol 701 ◽  
pp. 167-171 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
Azlinda Ab Azlinda ◽  
F.S. Husairi ◽  
M. Rusop ◽  
Saifollah Abdullah

Zinc acetate dehydrate as starting material along with diethanolamine as stabilizer, and isopropyl as a solvent were used to synthesis ZnO thin films in different low molarities. Sol-gel spin coating method was used in depositing ZnO on porous silicon substrate surface. In other to prepare substrate, p-type silicon wafer was etched by dilute hydrofluoric acid to modify the surface becomes porous. Field Emission Scanning Electron Microscopy (FESEM) was employed to study the surface morphology. It is found that ZnO thin films were successfully deposited on the substrates which are composed of ZnO nanoparticles with size ~16 nm to ~22nm. Atomic Force Microscopy (AFM) was used to investigate the surface roughness of thin film. The result shows that the surface roughness is increase as the increases of molarities. Photoluminescence (PL) spectra were done in range of 350 nm to 800 nm. The result shows peaks belonging to ZnO, ZnO defects, and porous silicon respectively are appeared.


2013 ◽  
Vol 200 ◽  
pp. 14-21 ◽  
Author(s):  
Waclaw Bala ◽  
Yurij Zorenko ◽  
Volodymyr Savchyn ◽  
Taras Voznyak ◽  
Kazimierz Paprocki ◽  
...  

The ZnO thin films have been produced on p-type Si and quartz substrates by the spin-coating method and after deposition were heated at different temperatures in the range from 650K to 850K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12K-350K. I-V, C-V measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The structural properties of the ZnO thin films were carried out using x-ray and SEM method. The effects of the thickness variation and annealing temperature on the crystallinity parameters were observed. The electrical response of grains, grain boundaries, and contacts of the ZnO film was obtained.


RSC Advances ◽  
2015 ◽  
Vol 5 (45) ◽  
pp. 35929-35933 ◽  
Author(s):  
Yu Chen ◽  
Aolin Li ◽  
Yige Li ◽  
Junfei Li ◽  
Guozhang Dai ◽  
...  

Porous ZrO2 thin films that are highly transparent to visible and infrared light were fabricated via a simple sol–gel dip-coating method, and have promising potential applications in solar cells as a high-temperature-resistant insulating layer.


2019 ◽  
Vol 290 ◽  
pp. 137-141
Author(s):  
Nurul Atikah Mohd Isa ◽  
Sha Shiong Ng ◽  
Zainuriah Hassan

In this study, aluminum nitride (AlN) thin films were grown on p-type silicon (100) substrate by sol-gel spin coating method. Two types of ethanol-based precursors were prepared, namely, precursors with and without the aid of diethanolamine (DEA). The objective of this work is to investigate the effects of the DEA on the surface morphology, structural and optical properties of the deposited thin films. The coating films were undergone nitridation process under ammonia ambient at 1100 °C for 60 min. The surface morphology and structural properties of the deposited AlN thin films were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD results revealed that both samples have AlN (100) preferred orientation. In addition, the crystallinity of sample without the aid of DEA is higher compared to the sample prepared with DEA. While, the AFM results showed that both samples have uniform and smooth surface. The optical properties of AlN thin films was investigated by Raman spectroscopy. For sample without DEA, Raman results showed the present of wurtzite AlN characteristics phonon modes of E2(high) and A1(LO) at 660 cm-1 and 892 cm-1, respectively. Whereas only E2(high) is observed for sample with the aid of DEA. Finally, all the results revealed that the present of DEA has a strong influence on the properties of deposited AlN thin films and film prepared without DEA have better quality.


Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2103 ◽  
Author(s):  
Tae-Hee Han ◽  
So-Young Bak ◽  
Sangwoo Kim ◽  
Se Hyeong Lee ◽  
Ye-Ji Han ◽  
...  

This paper introduces a method for improving the sensitivity to NO2 gas of a p-type metal oxide semiconductor gas sensor. The gas sensor was fabricated using CuO nanowires (NWs) grown through thermal oxidation and decorated with ZnO nanoparticles (NPs) using a sol-gel method. The CuO gas sensor with a ZnO heterojunction exhibited better sensitivity to NO2 gas than the pristine CuO gas sensor. The heterojunction in CuO/ZnO gas sensors caused a decrease in the width of the hole accumulation layer (HAL) and an increase in the initial resistance. The possibility to influence the width of the HAL helped improve the NO2 sensing characteristics of the gas sensor. The growth morphology, atomic composition, and crystal structure of the gas sensors were analyzed using field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy, and X-ray diffraction, respectively.


Author(s):  
Ibrahim Mohd Yazid ◽  
Muhammad Hazim Raselan ◽  
Shafinaz Sobihana Shariffudin ◽  
Puteri Sarah Mohamad Saad ◽  
Sukreen Hana ◽  
...  

2017 ◽  
Vol 31 (12) ◽  
pp. 1750114
Author(s):  
Imad H. Kadhim ◽  
H. Abu Hassan

Nanocrystalline tin dioxide (SnO2) thin films have been successfully prepared by sol–gel spin-coating technique on p-type Si (100) substrates. A stable solution was prepared by mixing tin(II) chloride dihydrate, pure ethanol, and glycerin. Temperature affects the properties of SnO2 thin films, particularly the crystallite size where the crystallization of SnO2 with tetragonal rutile structure is achieved when thin films that prepared under different aging heat times are annealed at 400[Formula: see text]C. By increasing aging heat time in the presence of annealing temperatures the FESEM images indicated that the thickness of the fabricated film was directly proportional to solution viscosity, increasing from approximately 380 nm to 744 nm, as well as the crystallization of the thin films improved and reduced defects.


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