scholarly journals Earth Quake Model 2.0 : Attract Force Equation Release Earthquake Mechanism with Explaining Related Phenomena

2019 ◽  
pp. 11-15
Author(s):  
Yan Ji
Keyword(s):  
Finite Element Method ◽  
Earth Quake ◽  
Economic Loss ◽  
Important Work ◽  
Mechanism Model ◽  
Force Equation ◽  
Initial Stage ◽  
Earthquake Predictions ◽  
Earthquake Mechanism ◽  
Physics Model

Earth quake was nature phenomena, which has huge destroyed power, and make huge economic loss and human injuries and deaths. The reason of Earth quake has caused lots of researches. And predicting Earthquake has been the very important work on every day. While the mechanism of Earth quake was still unclearly, and the Earthquake predictions were still at initial stage. This paper use attract force mathematic physics model to build Earthquake mechanism model by finite element method, and try to explain the reason of Earthquake formation. At same time it was used to explain the related phenomena about Earthquake. The aims were to help for accurate predict Earthquake, and try to redeem the economic loss and save more people. This model was named Earth Quake Model 2.0, which was different and distinguished from the models before, and it was wish to help for seismic researches.

Analysis and Research of Humanoid Robot Facial Expression Behavior Simulations

2013 ◽  
Vol 645 ◽  
pp. 239-242
Author(s):  
Yu Zhang ◽  
Xiao Jiao Wang
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Facial Expression ◽  
Mechanism Design ◽  
Facial Expressions ◽  
Humanoid Robot ◽  
Mechanism Model ◽  
Lower Jaw ◽  
Expression Behavior ◽  
Element Method

By analyzing the motion of eyes, eyebrows, mouth, and lower jaw in typical facial expressions, it obtains the motion scopes of each organ. Base on the humanoid head mechanism design, a robot model is created with existing software, which blends head mechanism model and facial elastomeric model. It simulates four typical facial expressions of the humanoid robot (happiness, sadness, surprise, anger) by using finite element method to analysis and simulation; and discuses under different displacement load, the degree of realizing facial expressions. It provided data for humanoid robot to be farther designed and developed.

Study on Hot Roll Profile in the Initial Stage of Twin-Roll Continuous Strip Casting

2012 ◽  
Vol 151 ◽  
pp. 179-183
Author(s):  
Guang Ming Zhu ◽  
Zheng Chang ◽  
Xiao Ling Xian
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Casting Process ◽  
Nonlinear Finite Element ◽  
Nonlinear Finite Element Method ◽  
Roll Profile ◽  
Roll Temperature ◽  
Initial Stage ◽  
Twin Roll ◽  
Continuous Strip

Using nonlinear finite element method, the changes of roll temperature and hot roll profile are studied in the initial casting stage, and the changing rule of hot roll profile is described in the initial casting stage which can be the evidence to decide the initial roll profile and casting process.

Reaction couples of ceramic thin films prepared by CVD

1988 ◽  
Vol 46 ◽  
pp. 798-799
Author(s):  
D.W. Susnitzky ◽  
S.R. Summerfelt ◽  
C.B. Carter
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solid State Reactions ◽  
Spatial Distributions ◽  
Diffusion Couples ◽  
Kinetics Studies ◽  
Ceramic Thin Films ◽  
Initial Stage

Solid-state reactions have traditionally been studied in the form of diffusion couples. This ‘bulk’ approach has been modified, for the specific case of the reaction between NiO and Al2O3, by growing NiAl2O4 (spinel) from electron-transparent Al2O3 TEM foils which had been exposed to NiO vapor at 1415°C. This latter ‘thin-film’ approach has been used to characterize the initial stage of spinel formation and to produce clean phase boundaries since further TEM preparation is not required after the reaction is completed. The present study demonstrates that chemical-vapor deposition (CVD) can be used to deposit NiO particles, with controlled size and spatial distributions, onto Al2O3 TEM specimens. Chemical reactions do not occur during the deposition process, since CVD is a relatively low-temperature technique, and thus the NiO-Al2O3 interface can be characterized. Moreover, a series of annealing treatments can be performed on the same sample which allows both Ni0-NiAl2O4 and NiAl2O4-Al2O3 interfaces to be characterized and which therefore makes this technique amenable to kinetics studies of thin-film reactions.

Decoration technique and surface physics

1978 ◽  
Vol 36 (1) ◽  
pp. 436-437 ◽  
Author(s):  
H. Bethge
Keyword(s):  
Diffusion Path ◽  
Special Importance ◽  
Surface Physics ◽  
Step Structure ◽  
Initial Stage ◽  
Special Cases ◽  
Atomic Surface ◽  
The Mean ◽  
Bulk Structure ◽  
Decoration Technique

Besides the atomic surface structure, diverging in special cases with respect to the bulk structure, the real structure of a surface Is determined by the step structure. Using the decoration technique /1/ it is possible to image step structures having step heights down to a single lattice plane distance electron-microscopically. For a number of problems the knowledge of the monatomic step structures is important, because numerous problems of surface physics are directly connected with processes taking place at these steps, e.g. crystal growth or evaporation, sorption and nucleatlon as initial stage of overgrowth of thin films.To demonstrate the decoration technique by means of evaporation of heavy metals Fig. 1 from our former investigations shows the monatomic step structure of an evaporated NaCI crystal. of special Importance Is the detection of the movement of steps during the growth or evaporation of a crystal. From the velocity of a step fundamental quantities for the molecular processes can be determined, e.g. the mean free diffusion path of molecules.

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

Simulation of tuning graphene plasmonic behaviors by ferroelectric domains for self-driven infrared photodetector applications

Nanoscale ◽  
2019 ◽  
Vol 11 (43) ◽  
pp. 20868-20875 ◽  
Author(s):  
Junxiong Guo ◽  
Yu Liu ◽  
Yuan Lin ◽  
Yu Tian ◽  
Jinxing Zhang ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Interfacial Effect ◽  
Infrared Photodetector ◽  
The Finite Element Method ◽  
Ferroelectric Domains ◽  
Element Method

We propose a graphene plasmonic infrared photodetector tuned by ferroelectric domains and investigate the interfacial effect using the finite element method.

Systems of Oppression in Geriatric Clinical Service Delivery

2021 ◽  
pp. 1-3
Author(s):  
Diane L. Kendall
Keyword(s):  
Higher Education ◽  
Service Delivery ◽  
Clinical Setting ◽  
Service Providers ◽  
Hard Work ◽  
Clinical Service ◽  
Meaningful Change ◽  
Important Work ◽  
Speech Language Pathologists ◽  
Medical Institutions

Purpose The purpose of this article was to extend the concepts of systems of oppression in higher education to the clinical setting where communication and swallowing services are delivered to geriatric persons, and to begin a conversation as to how clinicians can disrupt oppression in their workplace. Conclusions As clinical service providers to geriatric persons, it is imperative to understand systems of oppression to affect meaningful change. As trained speech-language pathologists and audiologists, we hold power and privilege in the medical institutions in which we work and are therefore obligated to do the hard work. Suggestions offered in this article are only the start of this important work.

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