Recent development of UV-B laser diodes
Abstract This review paper describes the history of development, current issues, and future expectations of UV-B laser diodes, which are expected to be adopted in various applications such as microfabrication and biotechnology in the near future. In order to achieve room temperature operation of this device, there were several challenges are remained, including the development of a crystal growth technique of high crystalline quality AlGaN that enables a laser oscillation with a low excitation carrier density, and the development of a semiconductor layer structure that simultaneously formation of a desirable optical cavity and injection of high density carriers (operation of high current density) to active layer allowing for laser oscillation. These challenges and the technologies that have overcome them are reviewed. Current status of the device characteristics and future challenges are also discussed.