Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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High Field-Effect Mobility Bottom-Gated Metallorganic Chemical Vapor Deposition ZnO Thin-Film Transistors with SiO[sub 2]∕Si[sub 3]N[sub 4] Bilayer Gate Dielectric

Journal of The Electrochemical Society ◽

10.1149/1.3499348 ◽

2010 ◽

Vol 157 (12) ◽

pp. H1110 ◽

Cited By ~ 8

Author(s):

K. Remashan ◽

Y. S. Choi ◽

S. J. Park ◽

J. H. Jang

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Field Effect ◽

High Field ◽

Gate Dielectric ◽

Chemical Vapor ◽

Zno Thin Film ◽

Field Effect Mobility

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Scaling down of organic thin film transistors: short channel effects and channel length-dependent field effect mobility

Journal of Materials Science ◽

10.1007/s10853-008-3047-6 ◽

2009 ◽

Vol 44 (1) ◽

pp. 280-284 ◽

Cited By ~ 21

Author(s):

Yi Chen ◽

Ishiang Shih

Keyword(s):

Field Effect ◽

Channel Length ◽

Organic Thin Film Transistors ◽

Short Channel Effects ◽

Organic Thin Film ◽

Field Effect Mobility ◽

Short Channel ◽

Channel Effects ◽

Scaling Down ◽

Dependent Field

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Improved field-effect mobility in short oligothiophenes: Quaterthiophene and quinquethiophene

Advanced Materials ◽

10.1002/adma.19970090504 ◽

1997 ◽

Vol 9 (5) ◽

pp. 389-391 ◽

Cited By ~ 95

Author(s):

Riadh Hajlaoui ◽

Gilles Horowitz ◽

Francis Garnier ◽

Alexandre Arce-Brouchet ◽

Laurent Laigre ◽

...

Keyword(s):

Field Effect ◽

Field Effect Mobility

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The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

Applied Physics Letters ◽

10.1063/1.4883216 ◽

2014 ◽

Vol 104 (23) ◽

pp. 233306 ◽

Cited By ~ 31

Author(s):

Kenji Kotsuki ◽

Hiroshige Tanaka ◽

Seiji Obata ◽

Sven Stauss ◽

Kazuo Terashima ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

Organic Thin Film Transistors ◽

Film Morphology ◽

Organic Thin Film ◽

Field Effect Mobility ◽

Spinning Speed

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The effect of gate dielectric deposition at different vacuum conditions on the field-effect mobility of pentacene based organic field effect transistors

Thin Solid Films ◽

10.1016/j.tsf.2017.06.054 ◽

2017 ◽

Vol 636 ◽

pp. 485-489 ◽

Cited By ~ 2

Author(s):

Sajal Biring ◽

Ya-Ze Li ◽

Chih-Chien Lee ◽

Arvind Pan ◽

Yan-De Li ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Field Effect Mobility

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Enhancement of the field-effect mobility of poly(3-hexylthiophene)/functionalized carbon nanotube hybrid transistors

Organic Electronics ◽

10.1016/j.orgel.2007.11.007 ◽

2008 ◽

Vol 9 (3) ◽

pp. 317-322 ◽

Cited By ~ 58

Author(s):

Yeong Don Park ◽

Jung Ah Lim ◽

Yunseok Jang ◽

Minkyu Hwang ◽

Hwa Sung Lee ◽

...

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Mobility ◽

Functionalized Carbon Nanotube

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Nitrogen-doped graphene films from simple photochemical doping for n-type field-effect transistors

Applied Physics Letters ◽

10.1063/1.4905342 ◽

2015 ◽

Vol 106 (1) ◽

pp. 013110 ◽

Cited By ~ 16

Author(s):

Xinyu Li ◽

Tao Tang ◽

Ming Li ◽

Xiancong He

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Nitrogen Doped ◽

Graphene Films ◽

Nitrogen Doped Graphene ◽

Doped Graphene

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Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOxGate Insulator

IEEE Electron Device Letters ◽

10.1109/led.2018.2791633 ◽

2018 ◽

Vol 39 (3) ◽

pp. 371-374 ◽

Cited By ~ 19

Author(s):

Ravindra Naik Bukke ◽

Christophe Avis ◽

Mude Narendra Naik ◽

Jin Jang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

Field Effect Mobility ◽

Remarkable Increase

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Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

MRS Proceedings ◽

10.1557/proc-297-901 ◽

1993 ◽

Vol 297 ◽

Cited By ~ 3

Author(s):

Byung Chul Ahn ◽

Jeong Hyun Kim ◽

Dong Gil Kim ◽

Byeong Yeon Moon ◽

Kwang Nam Kim ◽

...

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Atmospheric Pressure ◽

Thin Film Transistors ◽

Field Effect ◽

Low Cost ◽

Thin Film Transistor ◽

Field Effect Mobility ◽

Silicon Thin Film ◽

Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

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