scholarly journals Modelling and Simulation of Light and Temperature Efficient Interdigitated Back- Surface-Contact Solar Cell with 28.81% Efficiency Rate

2022 ◽  
Author(s):  
MD MAHFUZUR RAHMAN
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Optoelectronic Device ◽  
Atmospheric Temperature ◽  
Back Surface ◽  
Back Contact ◽  
Electrically Conducting ◽  
Operational Capabilities ◽  
To Receive ◽  
Sunlight Intensity

Back-contact solar cells improve optical properties by moving all electrically conducting parts to the back of the cell. The cell's structure allows silicon solar cells to surpass the 25% efficiency barrier and interdigitated solar cells are now the most efficient. In this work, the fabrication of a light efficient and temperature resistant interdigitated back contact (IBC) solar cell is investigated. This form of solar cell differs from conventional solar cell in that the electrodes are located at the back of the cell, eliminating the need for grids on the top, allowing the full surface area of the cell to receive sunlight, resulting in increased efficiency. In this project, we will use SILVACO TCAD, an optoelectronic device simulator, to construct a very thin solar cell with dimensions of 100x250um in 2D Luminous. The influence of sunlight intensity and atmospheric temperature on solar cell output power is highly essential and it has been explored in this work. The cell's optimum performance with 150um bulk thickness provides 28.81% efficiency with 87.68% fill factor rate making it very thin, flexible and resilient providing diverse operational capabilities.

scholarly journals Modelling and Simulation of Light and Temperature Efficient Interdigitated Back- Surface-Contact Solar Cell with 28.81% Efficiency Rate

2022 ◽  
Author(s):  
MD MAHFUZUR RAHMAN
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Optoelectronic Device ◽  
Atmospheric Temperature ◽  
Back Surface ◽  
Back Contact ◽  
Electrically Conducting ◽  
Operational Capabilities ◽  
To Receive ◽  
Sunlight Intensity

Back-contact solar cells improve optical properties by moving all electrically conducting parts to the back of the cell. The cell's structure allows silicon solar cells to surpass the 25% efficiency barrier and interdigitated solar cells are now the most efficient. In this work, the fabrication of a light efficient and temperature resistant interdigitated back contact (IBC) solar cell is investigated. This form of solar cell differs from conventional solar cell in that the electrodes are located at the back of the cell, eliminating the need for grids on the top, allowing the full surface area of the cell to receive sunlight, resulting in increased efficiency. In this project, we will use SILVACO TCAD, an optoelectronic device simulator, to construct a very thin solar cell with dimensions of 100x250um in 2D Luminous. The influence of sunlight intensity and atmospheric temperature on solar cell output power is highly essential and it has been explored in this work. The cell's optimum performance with 150um bulk thickness provides 28.81% efficiency with 87.68% fill factor rate making it very thin, flexible and resilient providing diverse operational capabilities.

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

Interdigitated back contact solar cells with SiO2 and SiN back surface passivation

2008 ◽  
Vol 354 (35-39) ◽  
pp. 4341-4344 ◽  
Author(s):  
I. Jozwik ◽  
P. Papet ◽  
A. Kaminski ◽  
E. Fourmond ◽  
F. Calmon ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Back Surface ◽  
Back Contact

scholarly journals PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

2008 ◽  
Vol 2008 ◽  
pp. 1-10 ◽  
Author(s):  
M. Hofmann ◽  
S. Kambor ◽  
C. Schmidt ◽  
D. Grambole ◽  
J. Rentsch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Internal Quantum Efficiency ◽  
Rear Surface ◽  
Chemical Vapour ◽  
Passivation Layer ◽  
Nuclear Reaction Analysis ◽  
Back Surface ◽  
Layer System

A novel plasma-enhanced chemical vapour deposited (PECVD) stack layer system consisting of a-SiOx:H, a-SiNx:H, and a-SiOx:H is presented for silicon solar cell rear side passivation. Surface recombination velocities below 60 cm/s (after firing) and below 30 cm/s (after forming gas anneal) were achieved. Solar cell precursors without front and rear metallisation showed implied open-circuit voltages Voc values extracted from quasi-steady-state photoconductance (QSSPC) measurements above 680 mV. Fully finished solar cells with up to 20.0% energy conversion efficiency are presented. A fit of the cell's internal quantum efficiency using software tool PC1D and a comparison to a full-area aluminium-back surface field (Al-BSF) and thermal SiO2 is shown. PECVD-ONO was found to be clearly superior to Al-BSF. A separation of recombination at the metallised and the passivated area at the solar cell's rear is presented using the equations of Fischer and Kray. Nuclear reaction analysis (NRA) has been used to evaluate the hydrogen depth profile of the passivation layer system at different stages.

Enhanced charge collection with ultrathin AlOxelectron blocking layer for hole-transporting material-free perovskite solar cell

2015 ◽  
Vol 17 (7) ◽  
pp. 4937-4944 ◽  
Author(s):  
Huiyun Wei ◽  
Jiangjian Shi ◽  
Xin Xu ◽  
Junyan Xiao ◽  
Jianheng Luo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Charge Collection ◽  
Blocking Layer ◽  
Back Contact ◽  
Hole Transporting ◽  
Hole Transporting Material

A MIS back contact was constructed by introducing an ultrathin AlOxlayer to improve the performance of HTM-free perovskite solar cells.

Improvement of Mo/Cu2ZnSnS4 interface for Cu2ZnSnS4 (CZTS) thin film solar cell application

2014 ◽  
Vol 1638 ◽  
Author(s):  
Hongtao Cui ◽  
Xiaolei Liu ◽  
Xiaojing Hao ◽  
Fangyang Liu ◽  
Ning Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Contact Region ◽  
Thin Film Solar Cells ◽  
Czts Thin Film ◽  
Back Contact ◽  
Secondary Phases ◽  
Solar Cell Application

ABSTRACTThe focus of this work is on back contact improvement for sputtered CZTS thin film solar cells. Three methods have been investigated including a thin Ag coating, a thin ZnO coating on the Mo back contact and rapid thermal annealing of the back contact. All of these methods have been found to reduce defects such as voids as well as secondary phases at the back contact region and inhibit the formation of MoS2. Consequently all the mothods effectively enhances Voc, Jsc, FF and therefore efficiency significantly.

Screen-Printed Al Back Contacts on Si Solar Cells: Issues and Some Solutions

2009 ◽  
Vol 1210 ◽  
Author(s):  
Vishal Mehta ◽  
Bhushan Sopori ◽  
Robert Reedy ◽  
Bobby To ◽  
Helio Moutinho ◽  
...  
Keyword(s):  
Surface Tension ◽  
Solar Cells ◽  
Basic Problem ◽  
Series Resistance ◽  
Back Surface ◽  
Al Alloy ◽  
Back Contact ◽  
Back Surface Field ◽  
Si Solar Cells ◽  
Surface Field

AbstractThis paper identifies some mechanisms that lead to problems in back Al contact formation. Major issues are related to a basic problem that the Al melt has a large surface tension and tries to ball up during the firing step. Other issues arise from dissolution of the Si-Al interface and entrapment of glass within the Si-Al alloy. Si diffusion into Al can be applied to control the melt, while cooling rate can help improve the structure of various regions of the back contact for a favorable series resistance. We also discuss a modified time-temperature profile that can lead to a deep and uniform back-surface field.

scholarly journals Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

2018 ◽  
Vol 9 ◽  
pp. 2700-2707 ◽  
Author(s):  
Nima Khoshsirat ◽  
Fawad Ali ◽  
Vincent Tiing Tiong ◽  
Mojtaba Amjadipour ◽  
Hongxia Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Single Layer ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
Tin Sulfide ◽  
Back Contact ◽  
Bilayer Films

Molybdenum (Mo) is the most commonly used material as back contact in thin-film solar cells. Adhesion of Mo film to soda–lime glass (SLG) substrate is crucial to the performance of solar cells. In this study, an optimized bilayer structure made of a thin layer of Mo on an ultra-thin chromium (Cr) adhesion layer is used as the back contact for a copper zinc tin sulfide (CZTS) thin-film solar cell on a SLG substrate. DC magnetron sputtering is used for deposition of Mo and Cr films. The conductivity of Mo/Cr bilayer films, their microstructure and surface morphology are studied at different deposition powers and working pressures. Good adhesion to the SLG substrate has been achieved by means of an ultra-thin Cr layer under the Mo layer. By optimizing the deposition conditions we achieved low surface roughness, high optical reflectance and low sheet resistivity while we could decrease the back contact thickness to 600 nm. That is two thirds to half of the thickness that is currently being used for bilayer and single layer back contact for thin-film solar cells. We demonstrate the excellent properties of Mo/Cr bilayer as back contact of a CZTS solar cell.

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