scholarly journals AMPLITUDE CHARACTERISTICS OF SILICON PHOTO-ELECTRON MULTIPLIER’S PHOTORESPORENSE

2019 ◽  
Author(s):  
Maryna Asayonak ◽  
Andrey Zenevich ◽  
Yauhen Novikau
Keyword(s):  
Optical Radiation ◽  
Supply Voltage ◽  
Block Diagram ◽  
Wave Length ◽  
Photon Counting ◽  
Current Mode ◽  
Average Amplitude ◽  
Avalanche Photodetectors ◽  
Operating Modes ◽  
Wide Range

Currently, in many applications, photodetectors are needed that provide registration of optical radiation in a wide range of intensities and allow combining two operating modes: current mode and photon counting. These devices include silicon photoelectronic multipliers (SiPM), which have a number of advantages compared to electrovacuum photomultipliers and avalanche photodetectors. However, the influence on the photoresponse characteristics of SiPM of such important factors as the supply voltage and temperature has not been studied enough. The influence of these factors on the amplitude parameters of the photoresponse of SiPM is studied. The block diagram of the experimental setup is presented, with the help of which the photoresponse characteristics of SiPM with n+-n-p+ and p+-p-n+ structures manufactured by Integral OJSC (Republic of Belarus) were measured. The dependences of the average amplitude of the photoresponse on the supply voltage and temperature of silicon photomultipliers for various wave-lengths of optical radiation are presented. It was found that when SiPM were exposed to optical pulses with the same duration and energy exposure at the same temperature at the same overvoltage, the photoresponse amplitude was larger for a SiPMr with p+-p-n+ structure regardless of the wave-length of optical radiation. It was found that, when the overvoltage changes, the increase in the photoresponse amplitude is observed only in the overvoltage range ΔU = 0 ¸ 3 V for all the studied SiPM, irrespective of the wave-length of the detected optical radiation and temperature. It was determined that a decrease in temperature led to an increase in the amplitude of the photoresponse pulses. The temperature dependence of the amplitude of the photoresponse was most pronounced for SiPM with the p+-p-n+ structure. It was shown that the dependences of the average amplitude of the photomonitor Si-PM on the energy exposure have a linear section, the length of which depends on the wavelength of the detected optical radiation.

scholarly journals Investigation of the characteristics of matrix multi-element avalanche photodetectors operating in the photon counting mode

2021 ◽  
Vol 9 (3) ◽  
pp. 216-223
Author(s):  
Ivan Gulakov ◽  
Andrey Zenevich ◽  
Evgeniy Novikov ◽  
Olga Kochergina ◽  
Anastasiy Lagutik
Keyword(s):  
Optical Radiation ◽  
Supply Voltage ◽  
Photon Counting ◽  
Silicon Photomultipliers ◽  
Research Results ◽  
Avalanche Photodetectors ◽  
Sensitivity Ratio ◽  
The Matrix ◽  
Counting Mode ◽  
Photon Counting Mode

At present, matrix multi-element avalanche photodetectors operating in the photon counting mode are widely used for detecting optical radiation. However, the char-acteristics of matrix multi-element avalanche photodetectors operating in this mode are currently insufficiently studied. Prototypes of Si-photomultiplier tubes (Si-PMTs) with a p+–p–n+ structure produced by JSC Integral (Republic of Belarus), as well as serially produced silicon photomultipliers Ketek PM 3325 and ON Semi FC 30035 have been used as objects of research. This article presents the research results of characteristics in the photon counting mode of the specified photodetec-tors. The dependences of the specific amplitude sensitivity ratio on the wavelength of optical radiation, the temperature, the supply voltage of the matrix multi-element avalanche photodetector are determined.

scholarly journals Investigation of the spectral characteristics of silicon photomultiplier tubes

2021 ◽  
Vol 9 (2) ◽  
pp. 164-171
Keyword(s):  
Spectral Sensitivity ◽  
Optical Radiation ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Spectral Characteristics ◽  
Wavelength Region ◽  
Silicon Photomultiplier ◽  
Silicon Photomultipliers ◽  
Short Wavelength Region ◽  
Avalanche Photodetectors

Успехи прикладной физики, 2021, том 9, No 2165I. R. Gulakov, A. O. Zenevich, and O. V. KocherginaBelarusian State Academy of Communications8/2 F. Skorina st., Minsk, 220114, BelarusE-mail: [email protected] January 12, 2021Recently multipixel avalanche photodetectors, called silicon photomultipliers are of-ten used to record optical radiation. The influence of ambient temperature and sup-ply voltage on the spectral sensitivity and dynamic range of prototypes of silicon pho-tomultipliers manufactured by JSC "Integral" (Republic ofBelarus) and commercially available photomultipliers KetekRM 3325 and ON Semi FC 30035 has been investigated in this article. It was determined that the spectral sensitivity maxi-mum of silicon photomultipliers is shifted to the short-wavelength region andcorre-sponds to the wavelength of optical radiation of 470 nm. It is shown that an increase in the supply voltage leads to an increase in the sensitivity of the investigated photodetectors, and the dependence of the sensitivity on temperature manifests itself in different ways when exposed to optical radiation of different wavelengths.

scholarly journals Detectivity optimization to detect of ultraweak light fluxes with an EM-CCD as binary photon counter array

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ibtissame Khaoua ◽  
Guillaume Graciani ◽  
Andrey Kim ◽  
François Amblard
Keyword(s):  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Photon Counting ◽  
Detection Methods ◽  
Strong Nonlinearity ◽  
Wide Range ◽  
Depth Analysis ◽  
Spatially Extended ◽  
Extended Sources ◽  
Photon Counting Mode

AbstractFor a wide range of purposes, one faces the challenge to detect light from extremely faint and spatially extended sources. In such cases, detector noises dominate over the photon noise of the source, and quantum detectors in photon counting mode are generally the best option. Here, we combine a statistical model with an in-depth analysis of detector noises and calibration experiments, and we show that visible light can be detected with an electron-multiplying charge-coupled devices (EM-CCD) with a signal-to-noise ratio (SNR) of 3 for fluxes less than $$30\,{\text{photon}}\,{\text{s}}^{ - 1} \,{\text{cm}}^{ - 2}$$ 30 photon s - 1 cm - 2 . For green photons, this corresponds to 12 aW $${\text{cm}}^{ - 2}$$ cm - 2 ≈ $$9{ } \times 10^{ - 11}$$ 9 × 10 - 11 lux, i.e. 15 orders of magnitude less than typical daylight. The strong nonlinearity of the SNR with the sampling time leads to a dynamic range of detection of 4 orders of magnitude. To detect possibly varying light fluxes, we operate in conditions of maximal detectivity $${\mathcal{D}}$$ D rather than maximal SNR. Given the quantum efficiency $$QE\left( \lambda \right)$$ Q E λ of the detector, we find $${ \mathcal{D}} = 0.015\,{\text{photon}}^{ - 1} \,{\text{s}}^{1/2} \,{\text{cm}}$$ D = 0.015 photon - 1 s 1 / 2 cm , and a non-negligible sensitivity to blackbody radiation for T > 50 °C. This work should help design highly sensitive luminescence detection methods and develop experiments to explore dynamic phenomena involving ultra-weak luminescence in biology, chemistry, and material sciences.

scholarly journals Octane Index Applicability over the Pressure-Temperature Domain

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 607
Author(s):  
Tommy R. Powell ◽  
James P. Szybist ◽  
Flavio Dal Forno Chuahy ◽  
Scott J. Curran ◽  
John Mengwasser ◽  
...  
Keyword(s):  
High Efficiency ◽  
National Laboratory ◽  
Operating Conditions ◽  
Dominant Factor ◽  
Compression Ignition ◽  
Oak Ridge ◽  
Operating Modes ◽  
Wide Range ◽  
Thermodynamic Conditions ◽  
Si Engines

Modern boosted spark-ignition (SI) engines and emerging advanced compression ignition (ACI) engines operate under conditions that deviate substantially from the conditions of conventional autoignition metrics, namely the research and motor octane numbers (RON and MON). The octane index (OI) is an emerging autoignition metric based on RON and MON which was developed to better describe fuel knock resistance over a broader range of engine conditions. Prior research at Oak Ridge National Laboratory (ORNL) identified that OI performs reasonably well under stoichiometric boosted conditions, but inconsistencies exist in the ability of OI to predict autoignition behavior under ACI strategies. Instead, the autoignition behavior under ACI operation was found to correlate more closely to fuel composition, suggesting fuel chemistry differences that are insensitive to the conditions of the RON and MON tests may become the dominant factor under these high efficiency operating conditions. This investigation builds on earlier work to study autoignition behavior over six pressure-temperature (PT) trajectories that correspond to a wide range of operating conditions, including boosted SI operation, partial fuel stratification (PFS), and spark-assisted compression ignition (SACI). A total of 12 different fuels were investigated, including the Co-Optima core fuels and five fuels that represent refinery-relevant blending streams. It was found that, for the ACI operating modes investigated here, the low temperature reactions dominate reactivity, similar to boosted SI operating conditions because their PT trajectories lay close to the RON trajectory. Additionally, the OI metric was found to adequately predict autoignition resistance over the PT domain, for the ACI conditions investigated here, and for fuels from different chemical families. This finding is in contrast with the prior study using a different type of ACI operation with different thermodynamic conditions, specifically a significantly higher temperature at the start of compression, illustrating that fuel response depends highly on the ACI strategy being used.

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

Detector commissioning and development for PETRA-III

2010 ◽  
Vol 1 (SRMS-7) ◽  
Author(s):  
David Pennicard ◽  
Heinz Graafsma ◽  
Michael Lohmann
Keyword(s):  
High Speed ◽  
Materials Science ◽  
Dynamic Range ◽  
Photon Counting ◽  
High Energy ◽  
X Rays ◽  
Silicon Detectors ◽  
Time Resolved ◽  
Wide Range ◽  
Synchrotron Light

The new synchrotron light source PETRA-III produced its first beam last year. The extremely high brilliance of PETRA-III and the large energy range of many of its beamlines make it useful for a wide range of experiments, particularly in materials science. The detectors at PETRA-III will need to meet several requirements, such as operation across a wide dynamic range, high-speed readout and good quantum efficiency even at high photon energies. PETRA-III beamlines with lower photon energies will typically be equipped with photon-counting silicon detectors for two-dimensional detection and silicon drift detectors for spectroscopy and higher-energy beamlines will use scintillators coupled to cameras or photomultiplier tubes. Longer-term developments include ‘high-Z’ semiconductors for detecting high-energy X-rays, photon-counting readout chips with smaller pixels and higher frame rates and pixellated avalanche photodiodes for time-resolved experiments.

Investigation of Dynamic Range of Silicon Photoelectronic Multiplyers

2021 ◽  
Vol 26 (1) ◽  
pp. 30-39
Author(s):  
A.O. Zenevich ◽  
◽  
O.V. Kochergina ◽  
Keyword(s):  
Optical Radiation ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Threshold Intensity ◽  
Photomultiplier Tubes ◽  
Silicon Photomultiplier ◽  
Low Intensity

For detecting the low-intensity optical radiation the silicon photoelectronic multiplyers are used more often. However, not all characteristics of these photoelectronic multiplyers have been thoroughly studied. So, there is no information about the influence of supply voltage on the value of the dynamic range. In the work as the study objects, the test specimens Si-PEM with a p+–p–n+ structure, produced by JSC Integral (Republik of Belarus), have been used, as well as the serially produced silicon photomultiplyers Ketek PM 3325 and ON Semi FC 30035. It has been found that an increase in the supply voltage leads to the critical decrease. It has been discovered that an increase an in the supply voltage leads to a decreased value of the threshold intensity. It has been proved that the dependence of the dynamic range on the supply voltage has a maximum. To ensure the maximum dynamic range of registration in the photo-detector devices based on the Si-photomultiplier tubes, it is necessary to select the photo-detector supply voltage, corresponding to this maximum. The results obtained in this article can be applied in the development and design of the devices for recording the optical radiation based on silicon photomultiplier tubes.

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