Investigation of the spectral characteristics of silicon photomultiplier tubes

Успехи прикладной физики, 2021, том 9, No 2165I. R. Gulakov, A. O. Zenevich, and O. V. KocherginaBelarusian State Academy of Communications8/2 F. Skorina st., Minsk, 220114, BelarusE-mail: [email protected] January 12, 2021Recently multipixel avalanche photodetectors, called silicon photomultipliers are of-ten used to record optical radiation. The influence of ambient temperature and sup-ply voltage on the spectral sensitivity and dynamic range of prototypes of silicon pho-tomultipliers manufactured by JSC "Integral" (Republic ofBelarus) and commercially available photomultipliers KetekRM 3325 and ON Semi FC 30035 has been investigated in this article. It was determined that the spectral sensitivity maxi-mum of silicon photomultipliers is shifted to the short-wavelength region andcorre-sponds to the wavelength of optical radiation of 470 nm. It is shown that an increase in the supply voltage leads to an increase in the sensitivity of the investigated photodetectors, and the dependence of the sensitivity on temperature manifests itself in different ways when exposed to optical radiation of different wavelengths.

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Investigation of Dynamic Range of Silicon Photoelectronic Multiplyers

Proceedings of Universities ELECTRONICS ◽

10.24151/1561-5405-2021-26-1-30-39 ◽

2021 ◽

Vol 26 (1) ◽

pp. 30-39

Author(s):

A.O. Zenevich ◽

◽

O.V. Kochergina ◽

Keyword(s):

Optical Radiation ◽

Dynamic Range ◽

Supply Voltage ◽

Threshold Intensity ◽

Photomultiplier Tubes ◽

Silicon Photomultiplier ◽

Low Intensity

For detecting the low-intensity optical radiation the silicon photoelectronic multiplyers are used more often. However, not all characteristics of these photoelectronic multiplyers have been thoroughly studied. So, there is no information about the influence of supply voltage on the value of the dynamic range. In the work as the study objects, the test specimens Si-PEM with a p+–p–n+ structure, produced by JSC Integral (Republik of Belarus), have been used, as well as the serially produced silicon photomultiplyers Ketek PM 3325 and ON Semi FC 30035. It has been found that an increase in the supply voltage leads to the critical decrease. It has been discovered that an increase an in the supply voltage leads to a decreased value of the threshold intensity. It has been proved that the dependence of the dynamic range on the supply voltage has a maximum. To ensure the maximum dynamic range of registration in the photo-detector devices based on the Si-photomultiplier tubes, it is necessary to select the photo-detector supply voltage, corresponding to this maximum. The results obtained in this article can be applied in the development and design of the devices for recording the optical radiation based on silicon photomultiplier tubes.

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Investigation of the characteristics of matrix multi-element avalanche photodetectors operating in the photon counting mode

ADVANCES IN APPLIED PHYSICS ◽

10.51368/2307-4469-2021-9-3-216-223 ◽

2021 ◽

Vol 9 (3) ◽

pp. 216-223

Author(s):

Ivan Gulakov ◽

Andrey Zenevich ◽

Evgeniy Novikov ◽

Olga Kochergina ◽

Anastasiy Lagutik

Keyword(s):

Optical Radiation ◽

Supply Voltage ◽

Photon Counting ◽

Silicon Photomultipliers ◽

Research Results ◽

Avalanche Photodetectors ◽

Sensitivity Ratio ◽

The Matrix ◽

Counting Mode ◽

Photon Counting Mode

At present, matrix multi-element avalanche photodetectors operating in the photon counting mode are widely used for detecting optical radiation. However, the char-acteristics of matrix multi-element avalanche photodetectors operating in this mode are currently insufficiently studied. Prototypes of Si-photomultiplier tubes (Si-PMTs) with a p+–p–n+ structure produced by JSC Integral (Republic of Belarus), as well as serially produced silicon photomultipliers Ketek PM 3325 and ON Semi FC 30035 have been used as objects of research. This article presents the research results of characteristics in the photon counting mode of the specified photodetec-tors. The dependences of the specific amplitude sensitivity ratio on the wavelength of optical radiation, the temperature, the supply voltage of the matrix multi-element avalanche photodetector are determined.

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Application features of micro-pixel avalanche photodetectors in the laser Doppler anemometers

Journal of Physics Conference Series ◽

10.1088/1742-6596/2057/1/012088 ◽

2021 ◽

Vol 2057 (1) ◽

pp. 012088

Author(s):

V V Rakhmanov ◽

S V Dvoynishnikov ◽

V G Meledin ◽

V A Pavlov ◽

D O Semenov

Keyword(s):

Optical Radiation ◽

Avalanche Photodiodes ◽

Laser Doppler Anemometer ◽

Optical Receiver ◽

Laser Doppler ◽

Silicon Photomultiplier ◽

Optical Signals ◽

Avalanche Photodetectors ◽

The Cost ◽

To Receive

Abstract The optical receiver is an essential part of any laser Doppler anemometer. Traditionally, vacuum photomultiplier tubes are used for reliable reception of weak optical radiation. However, this type of photodetector has its own drawbacks, which lead to a design complication and an increase in the cost of LDA. In this work, the characteristics of silicon micropixel avalanche photodiodes are investigated and the operation of a silicon photomultiplier as a photodetector in an LDA is tested when measuring the velocity on test benches. The possibility of using Si-PMT to receive optical signals of the laser Doppler anemometer is shown.

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APB differentially affects the cone contributions to the zebrafish ERG

Visual Neuroscience ◽

10.1017/s0952523802194144 ◽

2002 ◽

Vol 19 (4) ◽

pp. 521-529 ◽

Cited By ~ 17

Author(s):

SHANNON SASZIK ◽

AMBER ALEXANDER ◽

TIMOTHY LAWRENCE ◽

JOSEPH BILOTTA

Keyword(s):

Glutamate Receptors ◽

Spectral Sensitivity ◽

Visual Processing ◽

Short Wavelength ◽

Wavelength Region ◽

Wave Component ◽

Adult Zebrafish ◽

Short Wavelength Region ◽

Long Wavelength ◽

Sensitivity Functions

APB (DL-2-amino-4-phosphonobutyric acid) has been found to affect the retinal processing of many vertebrate species as evidenced by the suppression of the b-wave component of the electroretinogram (ERG). The present study examined the effects of APB on the cone contributions to the ERG response of adult zebrafish (Danio rerio). ERG responses were obtained from light-adapted adult zebrafish following intravitreal injection of either saline alone or saline with various concentrations of APB ranging from 10 μm to 500 μM. Visual stimuli were 200-ms flashes of various wavelengths and irradiances. Spectral sensitivity functions were calculated from the irradiance versus response amplitude functions of the a-, b-, and d-wave components of the ERG response. Saline had no effects on the ERG response. However, APB had differential effects on the sensitivity of the b- and d-wave components. The effects of APB on the b-wave component were most apparent in the ultraviolet and short-wavelength portions (320–440 nm) of the spectral sensitivity function, although the b-wave was not completely eliminated at these wavelengths. APB-treated subjects were found to possess the same cone mechanisms (L-M and M-S) in the middle- and long-wavelength areas of the spectrum as saline injected subjects, although absolute sensitivity was lower for the APB-injected subjects. Spectral sensitivity based on the d-wave response was affected by APB but only in the short-wavelength region. All results appear to be independent of the APB dose. These results support the notion that glutamate receptors play a specific role in zebrafish visual processing. In addition, the effects of APB support recent anatomical evidence that the zebrafish retina may possess different types of glutamate receptors.

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Silicon Photomultiplier Sensor Interface Based on a Discrete Second Generation Voltage Conveyor

Sensors ◽

10.3390/s20072042 ◽

2020 ◽

Vol 20 (7) ◽

pp. 2042

Author(s):

Vincenzo Stornelli ◽

Leonardo Pantoli ◽

Gianluca Barile ◽

Alfiero Leoni ◽

Emanuele D’Amico

Keyword(s):

Integrated Circuits ◽

Second Generation ◽

Supply Voltage ◽

Discrete Elements ◽

Silicon Photomultiplier ◽

Silicon Photomultipliers ◽

Sensor Interface ◽

Reduced Dimensions ◽

Complete Circuit ◽

Very High

This work presents the design of a discrete second-generation voltage conveyor (VCII) and its capability to be used as electronic interface for silicon photomultipliers. The design addressed here exploits directly at the transistor level, with commercial components, the proposed interface; the obtained performance is valuable considering both the discrete elements and the application. The architecture adopted here realizes a transimpedance amplifier that is also able to drive very high input impedance, as usually requested by photons detection. Schematic and circuital design of the discrete second-generation voltage conveyor is presented and discussed. The complete circuit interface requires a bias current of 20 mA with a dual 5V supply voltage; it has a useful bandwidth of about 106 MHz, and considering also the reduced dimensions, it is a good candidate to be used in portable applications without the need of high-cost dedicated integrated circuits.

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Characteristics dependence of the silicon photoelectronic multipliers on temperature

Proceedings of the National Academy of Sciences of Belarus Physical-Technical Series ◽

10.29235/1561-8358-2021-66-2-234-240 ◽

2021 ◽

Vol 66 (2) ◽

pp. 234-240

Author(s):

I. R. Gulakov ◽

A. O. Zenevich ◽

O. V. Kochergina ◽

A. M. Lemeshevskaya ◽

S. A. Saroka

Keyword(s):

Temperature Increase ◽

Optical Radiation ◽

Dynamic Range ◽

Supply Voltage ◽

Illumination Intensity ◽

Threshold Intensity ◽

Linear Section ◽

Ambient Temperatures ◽

Critical Intensity ◽

Intensity Axis

The characteristics dependence on the ambient temperature for three types of silicon photoelectronic multipliers have been studied in this research. The prototypes of Si-photoelectronic multipliers with a p+–p–n+ structure produced by JSC Integral (Republic of Belarus), serially produced silicon photoelectronic multipliers KETEK РМ3325 and ON Semi FC 30035 have been used as objects of research. We present the setup diagram and research technique. Measurements of the photocurrent magnitude versus the illumination intensity, calculations of the critical and threshold intensities, and the dynamic range have been performed. We also present the photocurrent dependences on the illumination intensity at different ambient temperatures. As it was found, these dependences have a linear section, the length of which characterizes the critical intensity value, and the inclination angle of the linear section to the intensity axis characterizes the photodetector sensitivity to optical radiation. It has been determined that the temperature increase leads to an increase in the critical intensity value and to a decrease in the sensitivity value. We present the dependences of the threshold intensity on the overvoltage at different ambient temperatures. The dependence of the threshold intensity on overvoltage is most strongly pronounced when the supply voltage is below the breakdown voltage. It was found that the threshold intensity is increased with the temperature increase and the threshold intensity dependence on the temperature is the same for all investigated photodetectors. It was found that the dynamic range value is decreased with the temperature increase, which is caused by a more significant change in the threshold intensity as compared to the critical one. The results given in this article can be applied when developing and designing the tools and devices for recording optical radiation based on silicon photoelectronic multipliers.

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AMPLITUDE CHARACTERISTICS OF SILICON PHOTO-ELECTRON MULTIPLIER’S PHOTORESPORENSE

Visnyk Universytetu “Ukraina” ◽

10.36994/2707-4110-2019-1-22-03 ◽

2019 ◽

Author(s):

Maryna Asayonak ◽

Andrey Zenevich ◽

Yauhen Novikau

Keyword(s):

Optical Radiation ◽

Supply Voltage ◽

Block Diagram ◽

Wave Length ◽

Photon Counting ◽

Current Mode ◽

Average Amplitude ◽

Avalanche Photodetectors ◽

Operating Modes ◽

Wide Range

Currently, in many applications, photodetectors are needed that provide registration of optical radiation in a wide range of intensities and allow combining two operating modes: current mode and photon counting. These devices include silicon photoelectronic multipliers (SiPM), which have a number of advantages compared to electrovacuum photomultipliers and avalanche photodetectors. However, the influence on the photoresponse characteristics of SiPM of such important factors as the supply voltage and temperature has not been studied enough. The influence of these factors on the amplitude parameters of the photoresponse of SiPM is studied. The block diagram of the experimental setup is presented, with the help of which the photoresponse characteristics of SiPM with n+-n-p+ and p+-p-n+ structures manufactured by Integral OJSC (Republic of Belarus) were measured. The dependences of the average amplitude of the photoresponse on the supply voltage and temperature of silicon photomultipliers for various wave-lengths of optical radiation are presented. It was found that when SiPM were exposed to optical pulses with the same duration and energy exposure at the same temperature at the same overvoltage, the photoresponse amplitude was larger for a SiPMr with p+-p-n+ structure regardless of the wave-length of optical radiation. It was found that, when the overvoltage changes, the increase in the photoresponse amplitude is observed only in the overvoltage range ΔU = 0 ¸ 3 V for all the studied SiPM, irrespective of the wave-length of the detected optical radiation and temperature. It was determined that a decrease in temperature led to an increase in the amplitude of the photoresponse pulses. The temperature dependence of the amplitude of the photoresponse was most pronounced for SiPM with the p+-p-n+ structure. It was shown that the dependences of the average amplitude of the photomonitor Si-PM on the energy exposure have a linear section, the length of which depends on the wavelength of the detected optical radiation.

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SiC Multilayered Photoreceptor for Electrophotography

MRS Proceedings ◽

10.1557/proc-149-643 ◽

1989 ◽

Vol 149 ◽

Author(s):

Y. Nakayama ◽

S. Akita ◽

H. Itoh ◽

T. Yajima ◽

M. Nakano ◽

...

Keyword(s):

Glow Discharge ◽

Spectral Sensitivity ◽

Short Wavelength ◽

Wavelength Region ◽

Deposition Process ◽

High Rate ◽

Short Wavelength Region ◽

Plain Paper

ABSTRACTNew multilayered photoreceptor consisting of all layers of a-Si1−xCx:H (x=0.1−0.8) has been developed on the basis of a high rate deposition process established using a glow discharge in a mixture of SiH4 and C2H2. This SiC photoreceptor is for negative charging and shows the excellent spectral sensitivity that is high in a short wavelength region and is reduced at the wavelengths longer than 600nm, suitable for the plain paper copier. The charge acceptance more than 40V/μn is achieved for the thickness less than 20μm. The charging characteristics are discussed in terms of deep emission states in the a-SiC:H.

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FRCaMP, a Red Fluorescent Genetically Encoded Calcium Indicator Based on Calmodulin from Schizosaccharomyces Pombe Fungus

International Journal of Molecular Sciences ◽

10.3390/ijms22010111 ◽

2020 ◽

Vol 22 (1) ◽

pp. 111

Author(s):

Oksana M. Subach ◽

Natalia V. Barykina ◽

Elizaveta S. Chefanova ◽

Anna V. Vlaskina ◽

Vladimir P. Sotskov ◽

...

Keyword(s):

Schizosaccharomyces Pombe ◽

Hela Cells ◽

Calcium Binding ◽

Dynamic Range ◽

Spectral Characteristics ◽

Binding Domain ◽

Calcium Transients ◽

Neuronal Cultures ◽

Decay Kinetics ◽

Calcium Binding Domain

Red fluorescent genetically encoded calcium indicators (GECIs) have expanded the available pallet of colors used for the visualization of neuronal calcium activity in vivo. However, their calcium-binding domain is restricted by calmodulin from metazoans. In this study, we developed red GECI, called FRCaMP, using calmodulin (CaM) from Schizosaccharomyces pombe fungus as a calcium binding domain. Compared to the R-GECO1 indicator in vitro, the purified protein FRCaMP had similar spectral characteristics, brightness, and pH stability but a 1.3-fold lower ΔF/F calcium response and 2.6-fold tighter calcium affinity with Kd of 441 nM and 2.4–6.6-fold lower photostability. In the cytosol of cultured HeLa cells, FRCaMP visualized calcium transients with a ΔF/F dynamic range of 5.6, which was similar to that of R-GECO1. FRCaMP robustly visualized the spontaneous activity of neuronal cultures and had a similar ΔF/F dynamic range of 1.7 but 2.1-fold faster decay kinetics vs. NCaMP7. On electrically stimulated cultured neurons, FRCaMP demonstrated 1.8-fold faster decay kinetics and 1.7-fold lower ΔF/F values per one action potential of 0.23 compared to the NCaMP7 indicator. The fungus-originating CaM of the FRCaMP indicator version with a deleted M13-like peptide did not interact with the cytosolic environment of the HeLa cells in contrast to the metazoa-originating CaM of the similarly truncated version of the GCaMP6s indicator with a deleted M13-like peptide. Finally, we generated a split version of the FRCaMP indicator, which allowed the simultaneous detection of calcium transients and the heterodimerization of bJun/bFos interacting proteins in the nuclei of HeLa cells with a ΔF/F dynamic range of 9.4 and a contrast of 2.3–3.5, respectively.

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