Thermal sensitivity from current-voltage-measurement temperature characteristics in Au/n-GaAs Schottky contacts

AbstractMetallurgical and electrical properties of β-phase PdAl Schottky metallizations on n-GaAs after rapid thermal annealing for 20 s in the temperature range 500-1000°C have been investigated using x-ray diffraction, transmission electron microscopy, Auger depth profiling and current-voltage measurement. The Al-rich contacts were stable up to 900°C, whereas the Pdrich contacts were less stable. The thermal stability of Pd-rich contacts decreased with increasing Pd composition, and interfacial reaction after high temperature annealing resulted in the formation of PdGa compound. The interface between Al-rich PdAI and GaAs substrate was quite sharp even after 900°C anneal. The Schottky barrier heights of Al-rich PdAl contacts increased with annealing temperature. The barrier height enhancement in the annealed Al-rich contacts can be attributed to the thin AlxGal−xAs layer formed at the interface between PdAl and GaAs.

Download Full-text

Current-voltage and current-temperature characteristics of alloyed pGe-nSi heterojunctions

Microelectronics Reliability ◽

10.1016/0026-2714(69)90085-7 ◽

1969 ◽

Vol 8 (3) ◽

pp. 260

Keyword(s):

Temperature Characteristics ◽

Current Voltage

Download Full-text

Metal Contacts on a-GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300002131 ◽

1996 ◽

Vol 1 ◽

Cited By ~ 7

Author(s):

T. U. Kampen ◽

W. Mönch

Keyword(s):

Tight Binding ◽

Image Force ◽

Schottky Contacts ◽

Metal Contacts ◽

Zero Bias ◽

Barrier Heights ◽

Current Voltage ◽

Optical Dielectric Constant ◽

Optical Dielectric ◽

Gap States

The Schottky barrier heights of silver and lead contacts on n-type GaN (0001) epilayers were determined from current-voltage characteristics. The zero-bias barrier heights and the ideality factors were found to be linearly correlated. Similar observations were previously reported for metal contacts on Si (111) and GaAs (110) surfaces. The barrier heights of ideal Schottky contacts are characterized by image force lowering of the barrier only. This gives an ideality factor of 1.01. From our data we obtain barrier heights of 0.82 eV and 0.73eV for ideal Ag and Pb contacts on GaN, respectively. The metal-induced gap states (MIGS) model predicts the barrier heights of ideal Schottky contacts on a given semiconductor to be linearly correlated with the electronegativities of the metals. The two important parameters of this MIGS-and-electronegativity model are the charge neutrality level (CNL) of the MIGS and a slope parameter. The CNL may be calculated from the dielectric band gap and using the empirical tight-binding method. The slope parameters are given by the optical dielectric constant of the respective semiconductor. The predictions of the MIGS model for metal/GaN contacts are confirmed by the results presented here and by barrier heights previously reported by others for Au, Ti, Pt, and Pd contacts on GaN.

Download Full-text

Contactless Determination of Optimal Chloride Concentration for Power Conversion Efficiency in CH3NH3Pb(Cl,I)3 Using Photoluminescence Spectroscopy

Photonics ◽

10.3390/photonics8100412 ◽

2021 ◽

Vol 8 (10) ◽

pp. 412

Author(s):

Takaho Asai ◽

Seigo Ito ◽

Takayuki Makino

Keyword(s):

Power Conversion Efficiency ◽

Conversion Efficiency ◽

Power Conversion ◽

Chloride Concentration ◽

Spectroscopic Characterization ◽

Voltage Measurement ◽

Current Voltage ◽

Non Destructive ◽

Pl Quenching

We applied room-temperature photoluminescence (PL) spectroscopy for the compositional engineering of a CH3NH3Pb(Cl,I)3 light harvester in an alloy-based perovskite solar cell. This spectroscopic characterization determines the optimal Cl concentration where the power conversion efficiency shows its maximum in a contactless and non-destructive manner. The PL quenching ratio evaluated from the comparative PL studies between the films grown on glass/ZrO2 and SnO2:F/TiO2 substrates exhibited its maximum at a Cl concentration of 10 mol%, which agrees with the Cl concentration determined from the current–voltage measurement-based device performance. We also discuss the possible reasons for the coincidence mentioned above regarding the charge extraction effect induced by Cl incorporation.

Download Full-text

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.1341 ◽

2008 ◽

Vol 600-603 ◽

pp. 1341-1344 ◽

Cited By ~ 1

Author(s):

Fabrizio Roccaforte ◽

Ferdinando Iucolano ◽

Filippo Giannazzo ◽

Salvatore di Franco ◽

Valeria Puglisi ◽

...

Keyword(s):

Electrical Properties ◽

Temperature Dependence ◽

Schottky Barrier ◽

Barrier Height ◽

Ideality Factor ◽

Schottky Contacts ◽

Electrical Behavior ◽

Atomic Force ◽

Current Voltage ◽

Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

Download Full-text