Atomic arrangement variations of [0001]-tilt grain boundaries in ZnO thin films grown on p-Si substrates due to thermal treatment

The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis orientation. The pole figure indicates that ZnO thin films have columnars with the grains of the [0002] crystallographic axis perpendicular to the Si (100) substrate, indicative of the random rotational orientations along the c-axis. Selected area electron diffraction pattern (SADP) of the ZnO/Si (100) heterostructures shows that the ZnO preferential oriented film is formed on the Si substrate. A possible atomic arrangement of the crystal structure and the formation mechanism of the c-axis orientated ZnO thin films grown on p-Si substrates are discussed on the basis of the XRD, the pole figure, and SADP results.

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Atomic Arrangement and Formation Mechanism of c-Axis Oriented ZnO Thin Films Grown on p-Si Substrates

Solid State Phenomena - Advances in Nanomaterials and Processing ◽

10.4028/3-908451-31-0.93 ◽

2007 ◽

pp. 93-96

Author(s):

N.K. Park ◽

H.S. Lee ◽

Y.S. No ◽

Tae Whan Kim ◽

Jeong Yong Lee ◽

...

Keyword(s):

Thin Films ◽

Formation Mechanism ◽

Zno Thin Films ◽

Atomic Arrangement ◽

Si Substrates

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Correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates

Applied Physics Letters ◽

10.1063/1.2338792 ◽

2006 ◽

Vol 89 (10) ◽

pp. 101904 ◽

Cited By ~ 8

Author(s):

J. W. Shin ◽

J. Y. Lee ◽

Y. S. No ◽

T. W. Kim ◽

W. K. Choi

Keyword(s):

Thin Films ◽

Grain Boundaries ◽

Zno Thin Films ◽

Triple Junctions ◽

Atomic Structures ◽

Si Substrates ◽

Misorientation Angles

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Atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Journal of Materials Research ◽

10.1557/jmr.2009.0233 ◽

2009 ◽

Vol 24 (6) ◽

pp. 2006-2010 ◽

Cited By ~ 1

Author(s):

J.W. Shin ◽

J.Y. Lee ◽

Y.S. No ◽

T.W. Kim ◽

W.K. Choi

Keyword(s):

Thin Films ◽

Transition Zone ◽

Thermal Annealing ◽

Misfit Strain ◽

Zno Thin Films ◽

Plane Rotation ◽

Atomic Arrangement ◽

Si Substrates ◽

Domain Boundaries ◽

Rotation Domain

High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin films showed the domain boundaries of a (0) plane with a transition zone and a (1) plane without a transition zone. The 30° in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5° in comparison with that of neighboring 30° in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.

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Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p‐InP (100) substrates

Journal of Applied Physics ◽

10.1063/1.2908874 ◽

2008 ◽

Vol 103 (8) ◽

pp. 083535

Author(s):

J. M. Yuk ◽

J. Y. Lee ◽

Y. S. No ◽

T. W. Kim ◽

W. K. Choi

Keyword(s):

Thin Films ◽

Thermal Treatment ◽

Zno Thin Films ◽

Formation Mechanisms

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Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.881-883.1117 ◽

2014 ◽

Vol 881-883 ◽

pp. 1117-1121 ◽

Cited By ~ 1

Author(s):

Xiang Min Zhao

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Buffer Layers ◽

Zno Thin Films ◽

Zno Films ◽

Si Substrates ◽

Atomic Force ◽

Structure Morphology ◽

Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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