Atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing
2009 ◽
Vol 24
(6)
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pp. 2006-2010
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Keyword(s):
High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin films showed the domain boundaries of a (0) plane with a transition zone and a (1) plane without a transition zone. The 30° in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5° in comparison with that of neighboring 30° in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.
2005 ◽
Vol 245
(1-4)
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pp. 384-390
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2007 ◽
pp. 93-96
Keyword(s):
2014 ◽
Vol 881-883
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pp. 1117-1121
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1997 ◽
Vol 302
(1-2)
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pp. 116-121
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2011 ◽
Vol 26
(1-4)
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pp. 84-89
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2011 ◽
Vol 59
(4)
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pp. 2774-2777
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2011 ◽
Vol 58
(5(1))
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pp. 1320-1323
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