Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors

Author(s):  
T.D Dzhafarov ◽  
S. Aydin ◽  
D. Oren
Author(s):  
Tengfei Cao ◽  
Caitlin Carfano ◽  
Gilberto A. Rodriguez ◽  
Moinul H. Choudhury ◽  
Francis O. Afzal ◽  
...  

2000 ◽  
Vol 4 (6) ◽  
pp. 363-366 ◽  
Author(s):  
Seong-Jeen Kim ◽  
Byung-Hyun Jeon ◽  
Kyu-Seong Choi ◽  
Nam-Ki Min

2010 ◽  
Vol 1253 ◽  
Author(s):  
Serdar Ozdemir ◽  
James L Gole

AbstractNanopore covered microporous silicon conductometric gas sensors have been produced via electrochemical etching and standard microfabrication techniques. Reversible and sensitive gas sensors working at room temperature have been fabricated. Sensing of NH3, NOx and PH3 at or below the ppm level have been achieved. The porous silicon (PS) surface has been modified using selective coatings including electroless tin, gold, nickel and copper solutions to increase the response to NOx, NH3, and PH3 respectively. The diffusion of the analyte species has been investigated in the nanopore and micropore regimes by numerical analysis. Comparing the response time of the hybrid porous sensor surface with numerical diffusion calculations on the pores, it has been observed that Knudsen diffusion time scales dominate the sensor response. A transduction model is proposed based on nanopore limited gas diffusion and the experimental response and recovery data.


Sensors ◽  
2002 ◽  
Vol 2 (3) ◽  
pp. 121-126 ◽  
Author(s):  
C. Baratto ◽  
G. Faglia ◽  
G. Sberveglieri ◽  
Z. Gaburro ◽  
L. Pancheri ◽  
...  

Nanosilicon ◽  
2008 ◽  
pp. 149-175 ◽  
Author(s):  
James L. Gole ◽  
Stephen E. Lewis

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4942 ◽  
Author(s):  
Francisco Ramírez-González ◽  
Godofredo García-Salgado ◽  
Enrique Rosendo ◽  
Tomás Díaz ◽  
Fabiola Nieto-Caballero ◽  
...  

We studied the influences of the thickness of the porous silicon layer and the conductivity type on the porous silicon sensors response when exposed to ethanol vapor. The response was determined at room temperature (27 ∘C) in darkness using a horizontal aluminum electrode pattern. The results indicated that the intensity of the response can be directly or inversely proportional to the thickness of the porous layer depending on the conductivity type of the semiconductor material. The response of the porous sensors was similar to the metal oxide sensors. The results can be used to appropriately select the conductivity of semiconductor materials and the thickness of the porous layer for the target gas.


2007 ◽  
Vol 131-133 ◽  
pp. 189-194 ◽  
Author(s):  
T.D Dzhafarov ◽  
S. Aydin ◽  
D. Oren

Current-voltage characteristics of Schottky-type Ag/Porous Silicon (Ag/PS) structures in normal air, humid ambient and in different hydrogen-containing solutions (distilled water, freshwater, Black sea-water, ethanol ad methanol) have been investigated. Generation of the opencircuit voltage (Voc), short-circuit current (Jsc) up to 560 mV and 0.5mA/cm2, respectively, on placing Ag/PS structures in hydrogen-containing solutions was discovered. This phenomenon is reversible, i.e. placing and removal of Ag/PS structures cell from hydrogen-containing solutions is accompanied by response and recovery of the Voc and Jsc parameters. It is shown that the thermal annealing of the Ag/PS structure at 200oC for 10 min is accompanied by somewhat changes and stabilization of Voc and Jsc parameters of Ag/PS sensors. The possible mechanisms related with hydrogen-stimulated generation of voltage and diffusion-stimulated stabilization of the sensing parameters of Ag/PS Schottky-type structures is suggested. Data received in this work indicate on perspectivity of using Ag/PS structures as both the gas sensors and hydrogen cells.


Author(s):  
Alexander S. Lenshin ◽  
Konstantin A. Barkov ◽  
Natalya G. Skopintseva ◽  
Boris L. Agapov ◽  
Evelina P. Domashevskaya

В работе методами растровой электронной микроскопии и ультрамягкойрентгеновской эмиссионной спектроскопии были проведены исследования особенностейформирования многослойных структур пористого кремния и установлено влияние изменения плотности тока при электрохимическом травлении монокристаллических пластин кремния на фазовый состав поверхностных слоев сформированной пористой структуры.         ЛИТЕРАТУРА1. Moshnikov V., Gracheva I., Lenshin A., Spivak Yu. Porous silicon with embedded metal oxides for gassensing applications // Journal of Non-Crystalline Solids, 2012 v. 358(3), pp. 590–595. DOI: https://doi.org/10.1016/j.jnoncrysol.2011.10.0172. Pacholski C. Photonic crystal sensors based on porous silicon // Sensors, 2013, v. 13(4), pp. 4694–4713.DOI: https://doi.org/10.3390/s1304046943. Harraz F. Porous silicon chemical sensors and biosensors: A review // Sensors and Actuators B, 2014,v. 202, pp. 897–912. DOI: https://doi.org/10.1016/j.snb.2014.06.0484. 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