Study on the Effect of ZnO Buffer Layer Thickness on the Properties of MgZnO Film

2011 ◽  
Vol 130-134 ◽  
pp. 1192-1195
Author(s):  
Xin Dong ◽  
H. Wang ◽  
J. Wang ◽  
Z.F. Shi ◽  
S.K. Zhang
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Buffer Layers ◽  
Structural And Optical Properties ◽  
Light Emitting ◽  
Large Binding Energy ◽  
Mgzno Film ◽  
Acoustic Wave Devices ◽  
Zno Buffer Layer ◽  
Different Thickness

ZnO has recently attracted considerable attention due to its favorable properties such as the wider band gap (3.37eV) at room temperature, the large binding energy of excitons (60meV). These good photoelectric and piezoelectric properties [1-4] cause it has immensity space for developing at surface acoustic wave devices, light emitting diodes (LEDs) [5] , photodetectors [6], gas sensor and solar cells [7] etc. MgZnO has many similar properties to ZnO. Furthermore, the band gap of MgZnO is 3.3-4.0eV [9] due to the wider band gap of MgO (7.7eV [8]). In this paper, we report the characteristic of MgxZn1-xO films which were grown on c-plane sapphire with different thickness-ZnO buffer layers by MOCVD. By investigating the surface morphology, structural and optical properties, some dependences between properties of MgZnO films and the thicknesses of ZnO buffer layers can be found.

scholarly journals The Effect Of Thickness on The Optical Properties Of ZnS

2007 ◽  
Vol 4 (4) ◽  
pp. 647-652
Author(s):  
Baghdad Science Journal
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Near Infrared ◽  
High Vacuum ◽  
Ultra Violet ◽  
Infrared Region ◽  
Complex Dielectric Constant ◽  
Film Properties ◽  
Corning Glass ◽  
Different Thickness

Zinc sulfide(ZnS) thin films of different thickness were deposited on corning glass with the substrate kept at room temperature and high vacuum using thermal evaporation technique.the film properties investigated include their absorbance/transmittance/reflectance spectra,band gap,refractive index,extinction coefficient,complex dielectric constant and thickness.The films were found to exhibt high transmittance(59-98%) ,low absorbance and low reflectance in the visible/near infrared region up to 900 nm..However, the absorbance of the films were found to be high in the ultra violet region with peak around 360 nm.The thickness(using optical interference fringes method) of various films thichness(100,200,300,and 400) nm.The band gap measured was found to be in the range (3.52 -3.78 )eV.

Tungsten Oxide Buffer Layers Fabricated in an Inert Sol-Gel Process at Room-Temperature for Blue Organic Light-Emitting Diodes

2013 ◽  
Vol 25 (30) ◽  
pp. 4113-4116 ◽  
Author(s):  
Stefan Höfle ◽  
Michael Bruns ◽  
Stefan Strässle ◽  
Claus Feldmann ◽  
Uli Lemmer ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Sol Gel ◽  
Organic Light Emitting Diodes ◽  
Buffer Layers ◽  
Light Emitting ◽  
Organic Light ◽  
Sol Gel Process

Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

2017 ◽  
Vol 56 (3) ◽  
pp. 032102 ◽  
Author(s):  
Kazuki Tani ◽  
Shin-ichi Saito ◽  
Katsuya Oda ◽  
Makoto Miura ◽  
Yuki Wakayama ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications

2011 ◽  
Vol 62 (2) ◽  
pp. 93-98 ◽  
Author(s):  
Stanislav Hasenöhrl ◽  
Jozef Novák ◽  
Ivo Vávra ◽  
Ján Šoltýs ◽  
Michal Kučera ◽  
...  
Keyword(s):  
Band Gap ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Lattice Parameter ◽  
Buffer Layers ◽  
Light Emitting ◽  
Optoelectronic Applications ◽  
Band Gap Structure

Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications Compositionally graded epitaxial semiconductor buffer layers are prepared with the aim of using them as a virtual substrate for following growth of heterostructures with the lattice parameter different from that of the substrates available on market (GaAs, GaP, InP or InAs). In this paper we report on the preparation of the step graded InxGa1-xP buffer layers on the GaP substrate. The final InxGa1-xP composition xIn was chosen to be at least 0.27. At this composition the InxGa1-xP band-gap structure converts from the indirect to the direct one and the material of such composition is suitable for application in light emitting diode structures. Our task was to design a set of layers with graded composition (graded buffer layer) and to optimize growth parameters with the aim to prepare strain relaxed template of quality suitable for the subsequent epitaxial growth.

scholarly journals Towards a Germanium and Silicon Laser: The History and the Present

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 624
Author(s):  
Ivan Pelant ◽  
Kateřina Kůsová
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Room Temperature ◽  
Light Emitting ◽  
Recent Advances ◽  
The Sixties ◽  
Valence Bands ◽  
Indirect Band Gap ◽  
In The Beginning ◽  
Si Quantum Dots

Various theoretical as well as empirical considerations about how to achieve lasing between the conduction and valence bands in indirect band gap semiconductors (germanium and silicon) are reviewed, starting from the dawn of the laser epoch in the beginning of the sixties. While in Ge the room-temperature lasing under electrical pumping has recently been achieved, in Si this objective remains still illusory. The necessity of applying a slightly different approach in Si as opposed to Ge is stressed. Recent advances in the field are discussed, based in particular on light-emitting Si quantum dots.

The Structure and Light Emitting of Silicon-Doped Boron Nitride Nanotubes

2012 ◽  
Vol 616-618 ◽  
pp. 1898-1901 ◽  
Author(s):  
Shi Feng Xu ◽  
Dan Xu
Keyword(s):  
Electron Microscopy ◽  
Optical Properties ◽  
Boron Nitride ◽  
Ftir Spectroscopy ◽  
Room Temperature ◽  
Energy Levels ◽  
Boron Nitride Nanotubes ◽  
Structural And Optical Properties ◽  
Light Emitting ◽  
Silicon Doped

In this paper, we report the structural and optical properties of bamboo-like silicon-doped boron nitride nanotubes. The morphologies and structures of the nanotubes were characterized using electron microscopy and FTIR spectroscopy. Three strong broad peaks centered at 1.76ev, 2.20ev, 2.40ev were observed from the room-temperature PL spectrum of the nanotubes. The spectrum suggested the existence of multifold energy levels within the band gap.

Co‐Evaporated Perovskite Light‐Emitting Transistor Operating at Room Temperature

2021 ◽  
pp. 2100403
Author(s):  
Maciej Klein ◽  
Jia Li ◽  
Annalisa Bruno ◽  
Cesare Soci
Keyword(s):  
Room Temperature ◽  
Light Emitting

scholarly journals Encapsulated Passivation of Perovskite Quantum Dot (CsPbBr3) Using a Hot-Melt Adhesive (EVA-TPR) for Enhanced Optical Stability and Efficiency

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Surface Defects ◽  
Optoelectronic Devices ◽  
Ethylene Vinyl Acetate ◽  
Light Emitting ◽  
Optical Stability ◽  
Perovskite Quantum Dots ◽  
Polymer Light Emitting Diodes ◽  
Hot Melt

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).

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