Study of CdxZn1-xTe Thin Films with Cu Layers

2013 ◽  
Vol 329 ◽  
pp. 114-117
Author(s):  
Shuo Jin ◽  
Li Li Wu ◽  
Wen Wu Wang ◽  
Guang Gen Zeng ◽  
Liang Huan Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
Carrier Density ◽  
Promising Material ◽  
Electrical And Optical Properties ◽  
Tandem Solar Cells ◽  
Conduction Type ◽  
P Type

CdxZn1-xTe is a promising material for tandem solar cells with a continuously adjustable band gap from 1.45eV to 2.26eV, but p-type CdxZn1-xTe with higher carrier density is rarely reported. CdxZn1-xTe thin films with Cu layers were deposited by vacuum co-evaporation in sequence and annealed in low vacuum in this paper. The compositional, structural, morphological, electrical and optical properties were studied. The results show that zinc-blended Cd0.4Zn0.6Te films with (111) preferred orientation were fabricated. Conduction type of annealed CdxZn1-xTe films with Cu layers will change from intrinsic to p-type. Cu doped CdxZn1-xTe thin films with carrier density of 1018~1019cm-3 and the band-gap of 1.89~1.93eV can be obtained. It demonstrates that Cu is an effective p-type dopant for CdxZn1-xTe thin films.

scholarly journals Tunable relativistic quasiparticle electronic and excitonic behavior of the FAPb(I1−xBrx)3 alloy

2020 ◽  
Vol 22 (21) ◽  
pp. 11943-11955 ◽  
Author(s):  
Zeeshan Muhammad ◽  
Peitao Liu ◽  
Rashid Ahmad ◽  
Saeid Jalali Asadabadi ◽  
Cesare Franchini ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
High Performance ◽  
Material Design ◽  
Tandem Solar Cells ◽  
Excitonic Properties

The quasiparticle and excitonic properties of mixed FAPb(I1−xBrx)3 0 ≤ x ≤ 1 alloys are studied. We show that Br-doping provides an efficient and controllable way to tune the band gap and optical properties, beneficial for material design of high performance tandem solar cells.

Magnetic, electrical and optical properties of p-type Fe-doped CuCrO2 semiconductor thin films

2013 ◽  
Vol 581 ◽  
pp. 502-507 ◽  
Author(s):  
Fangting Lin ◽  
Cai Gao ◽  
Xiaoshan Zhou ◽  
Wangzhou Shi ◽  
Aiyun Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Semiconductor Thin Films ◽  
P Type

Effect of different sputtering gas mixtures on the structural, electrical, and optical properties of p-type NiO thin films

2013 ◽  
Vol 16 (5) ◽  
pp. 1346-1351 ◽  
Author(s):  
Joon-Ho Oh ◽  
Soon Yong Hwang ◽  
Young Dong Kim ◽  
Jun-Hyuk Song ◽  
Tae-Yeon Seong
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Gas Mixtures ◽  
Electrical And Optical Properties ◽  
P Type

Research Scheme Design of Copper-Based Chalcogenide Crystal Thin Film Materials for Solar Cells

2014 ◽  
Vol 1049-1050 ◽  
pp. 813-816
Author(s):  
Ke Gao Liu ◽  
Lu Dan Shi ◽  
Dong Xiang
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
Oriented Growth ◽  
Electrical And Optical Properties ◽  
Scheme Design ◽  
Crystal Film ◽  
And Performance ◽  
Co Reduction

The keys for development of copper-based chalcogenide crystal thin film solar cells are to improve efficiency and reduce costs. Oriented growth and band gap grading of its absorption layer crystal film are important ways to improve the efficiency. It proposed controllable preparation of this type thin film by chemical solution deposition and co-reduction, and study on the crystal orientation and regulation of the band gap gradient. It will design the composition and band gap gradient of multi-component and multilayer films, and establish the models for design, theoretical calculation and performance prediction; It will explore the effect of band gap gradient on electrical and optical properties and reveal the effecting laws and mechanism on electrical and optical properties.

Thin Film a-Si/poly-Si Multibandgap Tandem Solar Cells With Both Absorber Layers Deposited by Hot Wire Cvd

2001 ◽  
Vol 664 ◽  
Author(s):  
R.E.I. Schropp ◽  
C.H.M. Van Der Werf ◽  
M.K. Van Veen ◽  
P.A.T.T. Van Veenendaal ◽  
R. Jimenez Zambrano ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Band Gap ◽  
Steel Substrate ◽  
Light Trapping ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Tandem Solar Cells ◽  
Hydrogen Dilution ◽  
P Type

ABSTRACTThe first competitive a-Si/poly-Si multibandgap tandem cells have been made in which the two intrinsic absorber layers are deposited by Hot Wire Chemical Vapor Deposition (HWCVD). These cells consist of two stacked n-i-p type solar cells on a plain stainless steel substrate using plasma deposited n- and p-type doped layers and Hot-Wire deposited intrinsic (i) layers, where the i-layer is either amorphous (band gap 1.8 eV) or polycrystalline (band gap 1.1 eV). In this tandem configuration, all doped layers are microcrystalline and the two intrinsic layers are made by decomposing mixtures of silane and hydrogen at hot filaments in the vicinity of the substrate. For the two layers we used individually optimized parameters, such as gas pressure, hydrogen dilution ratio, substrate temperature, filament temperature, and filament material. The solar cells do not comprise an enhanced back reflector, but feature a natural mechanism for light trapping, due to the texture of the (220) oriented poly-Si absorber layer and the fact that all subsequent layers are deposited conformally. The deposition rate for the throughput limiting step, the poly-Si i-layer, is ≍ 5-6 Å/s. This layer also determines the highest substrate temperature required during the preparation of these tandem cells (500 °C). The initial efficiency obtained for these tandem cells is 8.1 %. The total thickness of the silicon nip/nip structure is only 1.1 µm.

Electrical and Optical Properties of Transparent Conducting p -Type SrTiO3 Thin Films

2015 ◽  
Vol 99 (1) ◽  
pp. 226-233 ◽  
Author(s):  
Wei Huang ◽  
Riad Nechache ◽  
Shun Li ◽  
Mohamed Chaker ◽  
Federico Rosei
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Transparent Conducting ◽  
P Type
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