Modeling the Phonon Transport in Nanowire with Different Cross-Section
2013 ◽
Vol 401-403
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pp. 852-855
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The phonon transport in silicon nanowire was simulated by Monte Carlo Method (MCM). The effect on the phonon transport of the boundary reflection mode, cross-section size and cross-section shape was studied. Analysis shows that diffuse reflection can result in phonon accumulation at the circumferential boundary. As the cross-section size decrease, the nonuniformity of the temperature distribution within the cross-section becomes more severe. When the area of the square cross-section silicon nanowire (SCSN) is equal to that of the circular cross-section silicon nanowire (CCSN), the thermal conductivity of them is more close to each other.
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2011 ◽
Vol 70
◽
pp. 129-134
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2021 ◽
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1998 ◽
Vol 57
(23)
◽
pp. 14958-14973
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2017 ◽
Vol 46
(2)
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pp. 105-112
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