Technical Analysis of Photovoltaic Modules with 20 Years of Tropical Weather Outdoor Exposure

2014 ◽  
Vol 472 ◽  
pp. 562-566
Author(s):  
M.F.J. Bione ◽  
M.C. Alonso-García ◽  
M.B.A. Zamorano ◽  
F. Chenlo

This paper presents the results of the characterization of photovoltaic modules after 20 years of outdoor exposure, and 10 years of operation in Brazil. Several samples of the installed modules were sent to CIEMAT laboratories in Madrid (Spain), where visual inspection, IR characterization, analysis of the chemical composition of the modules, and electrical characterization was performed. I-V curves were measured indoors with solar simulator, and main curve parameters were compared to those obtained from an equivalent module without external exposure. The effect of dust and dirt was evaluated. Series and shunt resistance were calculated, relating these values with the power losses and the visual defects.

2020 ◽  
Vol 217 ◽  
pp. 112990 ◽  
Author(s):  
Ahmed M. Agwa ◽  
Attia A. El-Fergany ◽  
Hady A. Maksoud

Author(s):  
José Bione Melo Filho ◽  
Maria Carmen Alonso Garcia ◽  
Maria Begoña Asenjo ◽  
Pedro Bezerra Carvalho ◽  
Faustino Chenlo

2020 ◽  
Vol 15 (5) ◽  
pp. 639-646
Author(s):  
Silvia Luciani ◽  
Gianluca Coccia ◽  
Sebastiano Tomassetti ◽  
Mariano Pierantozzi ◽  
Giovanni Di Nicola

During their lifetime, photovoltaic (PV) plants are subject to a normal degradation of their components, and they are consequently characterized by decrease of the expected production. In order to prevent and evaluate failures and loss of production, specific tests can be carried out on the PV modules. Non-destructive methods, such as visual inspection and infrared thermography, can be performed in order to determine production failures or defects on the PV modules. I-V curves allow to estimate the performance of photovoltaic modules and strings, estimating the deviation between the power of the examined module and that declared by the manufacturer. The aim of this work is to evaluate the efficiency loss of photovoltaic modules associated to specific defects, causing in a systematic way some faults on a set of brand-new modules and assessing the relative decrease of power. The set of brand-new photovoltaic modules, after being damaged, was experimentally characterized determining their I-V curves by means of an indoor solar flash test device based on a class A+ AM 1.5 solar simulator. Using the I-V curves as a dataset, it was possible to estimate the incidence of different defects on the power of the photovoltaic module being considered.


Author(s):  
M. Caruso ◽  
R. Miceli ◽  
S. Guarino ◽  
F. Ricco Galluzzo ◽  
M. Roscia ◽  
...  

Energy ◽  
2015 ◽  
Vol 89 ◽  
pp. 768-777 ◽  
Author(s):  
P. Rodrigo ◽  
S. Gutiérrez ◽  
Ramiro Velázquez ◽  
Eduardo F. Fernández ◽  
F. Almonacid ◽  
...  

2013 ◽  
Vol 27 (11) ◽  
pp. 1350080 ◽  
Author(s):  
MUHAMMAD TAHIR ◽  
MUHAMMAD HASSAN SAYYAD ◽  
FAZAL WAHAB ◽  
DIL NAWAZ KHAN

This paper reports the fabrication of Ag / N - BuHHPDI /p- Si heterojunction diode by evaporating a layer of organic compound N-Butyl-N'-(6-hydroxyhexyl) perylene-3,4,9,10-tetracarboxylicacid-diimide (N-BuHHPDI) on top of the p- Si . The electronic properties of the heterojunction have been studied, in dark at a temperature of 300 K, by conventional current–voltage (I–V) method, Norde's method and Cheung's technique. By analyzing conventional I–V characteristics, the device exhibited rectifying behavior with a rectification ratio of 62.67 at ± 5.8 V. From the forward biased I–V measurements, the barrier height and ideality factor values of 0.83 eV and 6.4, respectively, have been obtained. Different diode parameters such as series resistance, shunt resistance, reverse saturation current and turn on voltage have been extracted from the I–V measurements. The parameters calculated from Norde's and Cheung's methods are found to be in good agreement with those calculated from conventional I–V measurements. Morphology of the N-BuHHPDI film is investigated using atomic force microscope (AFM).


1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.


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