THE ELECTRICAL CHARACTERIZATION OF Ag/N-BuHHPDI/p-Si HETEROJUNCTION BY CURRENT–VOLTAGE CHARACTERISTICS

2013 ◽  
Vol 27 (11) ◽  
pp. 1350080 ◽  
Author(s):  
MUHAMMAD TAHIR ◽  
MUHAMMAD HASSAN SAYYAD ◽  
FAZAL WAHAB ◽  
DIL NAWAZ KHAN
Keyword(s):  
Series Resistance ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Heterojunction Diode ◽  
Shunt Resistance ◽  
Atomic Force ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Good Agreement

This paper reports the fabrication of Ag / N - BuHHPDI /p- Si heterojunction diode by evaporating a layer of organic compound N-Butyl-N'-(6-hydroxyhexyl) perylene-3,4,9,10-tetracarboxylicacid-diimide (N-BuHHPDI) on top of the p- Si . The electronic properties of the heterojunction have been studied, in dark at a temperature of 300 K, by conventional current–voltage (I–V) method, Norde's method and Cheung's technique. By analyzing conventional I–V characteristics, the device exhibited rectifying behavior with a rectification ratio of 62.67 at ± 5.8 V. From the forward biased I–V measurements, the barrier height and ideality factor values of 0.83 eV and 6.4, respectively, have been obtained. Different diode parameters such as series resistance, shunt resistance, reverse saturation current and turn on voltage have been extracted from the I–V measurements. The parameters calculated from Norde's and Cheung's methods are found to be in good agreement with those calculated from conventional I–V measurements. Morphology of the N-BuHHPDI film is investigated using atomic force microscope (AFM).

The electrical characterization of Ag/PTCDA/PEDOT:PSS/p-Si Schottky diode by current–voltage characteristics

2013 ◽  
Vol 415 ◽  
pp. 77-81 ◽  
Author(s):  
Muhammad Tahir ◽  
Muhammad Hassan Sayyad ◽  
Fazal Wahab ◽  
Dil Nawaz Khan ◽  
Fakhra Aziz
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Current Voltage Characteristics

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H PIN structures

2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas
Keyword(s):  
Temperature Dependence ◽  
Temperature Change ◽  
Ideality Factor ◽  
Dark Current ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.

Electrical Characterization of the Grain-Boundary Region of SnO2 Varistors

2006 ◽  
Vol 518 ◽  
pp. 235-240 ◽  
Author(s):  
M. Žunić ◽  
Z. Branković ◽  
G. Branković ◽  
D. Poleti
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Electric Fields ◽  
Electrical Characterization ◽  
Boundary Region ◽  
Current Voltage ◽  
Schottky Type ◽  
Boundary Properties ◽  
Current Voltage Characteristics

The effect of Co, Cr and Nb on the electrical properties of the grain boundaries of SnO2-based varistors was investigated. The powders were prepared by the method of evaporation and decomposition of solutions and suspensions. Varistor samples were obtained by uniaxial pressing followed by sintering at 1300 °C for 1h. The electrical properties of the grain-boundary region, such as resistance (R) and capacitance (C), were determined using ac impedance spectroscopy in the 27-330 °C temperature interval. Activation energies for conduction (EA) were calculated from the Arrhenius equation. The non-linear coefficients (α) and the breakdown electric fields (Eb) of the samples were determined from the current-voltage characteristics. The potential barrier height (Φb) was calculated using the Schottky-type conducting model. After a comparison of the characteristic parameters for different varistor compositions it was found that the Cr/Nb ratio has a crucial influence on the grain-boundary properties in SnO2 varistors.

Optical and Electrical Characterization of Copper-and Chlorine-Doped Cadmium Zinc Telluride

1997 ◽  
Vol 487 ◽  
Author(s):  
J. E. Toney ◽  
B. A. Brunett ◽  
T. E. Schlesinger ◽  
E. Cross ◽  
F. P. Doty ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Charge Collection ◽  
Detector Response ◽  
Induced Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Cadmium Zinc ◽  
Low Temperature Photoluminescence

AbstractWe have used low-temperature photoluminescence spectroscopy and photo-induced current transient spectroscopy to study the properties of copper-doped Cd1−xZnxTe with x=0.1 and chlorine-doped Cd1−xZnxTe with x=0.2, 0.35 and 0.5. The current-voltage characteristics and detector response were also measured. We observed variations in charge collection and resistivity in the Cu-doped samples which was correlated with variations in PICTS spectra. The Cl-doped material was found to have insufficient resistivity for detector operation.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

scholarly journals Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs

2013 ◽  
Vol 2013 ◽  
pp. 1-10 ◽  
Author(s):  
A. Karsenty ◽  
A. Chelly
Keyword(s):  
Room Temperature ◽  
Series Resistance ◽  
Electrical Characteristics ◽  
Saturation Current ◽  
Mobility Degradation ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Channel Thickness ◽  
Current Voltage Characteristics ◽  
First Time

Ultrathin body (UTB) and nanoscale body (NSB) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46 nm and lower than 5 nm, respectively, were fabricated using a selective “gate-recessed” process on the same silicon wafer. Their current-voltage characteristics measured at room temperature were found to be surprisingly different by several orders of magnitude. We analyzed this result by considering the severe mobility degradation and the influence of a huge series resistance and found that the last one seems more coherent. Then the electrical characteristics of the NSB can be analytically derived by integrating a gate voltage-dependent drain source series resistance. In this paper, the influence of the channel thickness on the series resistance is reported for the first time. This influence is integrated to the analytical model in order to describe the trends of the saturation current with the channel thickness. This modeling approach may be useful to interpret anomalous electrical behavior of other nanodevices in which series resistance and/or mobility degradation is of a great concern.

Electrical Characterization of Laser-Irradiated 4H-SiC Wafer

2002 ◽  
Vol 719 ◽  
Author(s):  
I. Salama ◽  
N. R Quick ◽  
A. Kar ◽  
Gilyong Chung
Keyword(s):  
Electronic Properties ◽  
Electrical Characterization ◽  
Electric Resistance ◽  
Current Voltage ◽  
Impurity Doping ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Sic Wafer ◽  
Conventional Annealing

AbstractHighly conductive tracks are generated in low-doped epilayers on 4H-SiC wafers using a laserdirect write technique. The current-voltage characteristics are measured to study the effect of the applied voltage on the electric resistance and the surface contact of the irradiated tracks. The effect of multiple irradiations on the electronic properties of the fabricated tracks was investigated and compared with the effect of the conventional annealing process. A laser doping process was used to achieve n-type as well as p-type impurity doping in the substrate. The electronic properties of the doped tracks are measured and compared with those of the untreated wafers. Microstructural observation and surface analysis of the irradiated tracks are studied. Laser fabrication of rectifying contact on SiC substrates is demonstrated.

scholarly journals Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

2019 ◽  
Vol 37 (3) ◽  
pp. 496-502 ◽  
Author(s):  
A. Sadoun ◽  
S. Mansouri ◽  
M. Chellali ◽  
N. Lakhdar ◽  
A. Hima ◽  
...  
Keyword(s):  
Experimental Data ◽  
Barrier Height ◽  
Theoretical Study ◽  
Series Resistance ◽  
Electrical Parameters ◽  
Current Voltage ◽  
Temperature Ranges ◽  
Current Voltage Characteristics ◽  
Schottky Structure ◽  
Good Agreement

AbstractIn this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified ( {( {\ln \left( {{{{\rm{I}}_0 } \over {{\rm{T}}^2 }}} \right) - \left( {{{{\rm{q}}^2 \sigma _{{\rm{s}}0}^2 } \over {2{\rm{kT}}^2 }}} \right) = \ln ( {{\rm{AA}}^*} ) - {{{\rm{q}}\emptyset_{{\rm B}0} } \over {{\rm{kT}}}}} ){\rm{vs}}.( {{1 \over {{\rm{kT}}}}} )} ) relation has been extracted from (I-V) characteristics, where the values of ΦB0 and {\rm{A}}_{{\rm{Simul}}}^* have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.

Sign in / Sign up

Export Citation Format

Share Document