Simulaiton of the Dual Frequency Capacitively Coupled Ar Plasma Using Fluid Model in Semiconductor Technique

Low-pressure capacitively coupled plasmas are now widely used for plasma processing in the semiconductor technique. In this paper, a numerical simulation model was developed to simulate the plasma in a dual frequency capacitively coupled plasma reactor based on a two-dimensional, self-consistent fluid model. The aim of our work is to provide estimates of the main discharge and plasma parameters and to help understand the basic mechanisms governing the CCP etching devices. Accurate solutions of the continuity equations, electron energy balance equation and possion's equation with realistic boundary conditions are obtained. The numerical results are used to analyze the plasma density distribution for one and two dimensional on whole plasma reactor.