Influence of Surface Integrity in Silicon Wafer Thickness Measurements by Reflection Spectroscopy

2014 ◽  
Vol 1017 ◽  
pp. 681-685
Author(s):  
Teppei Onuki ◽  
Ryusuke Ono ◽  
Hirotaka Ojima ◽  
Jun Shimizu ◽  
Li Bo Zhou
Keyword(s):  
Reflection Spectroscopy ◽  
Flat Surfaces ◽  
Wafer Thickness ◽  
High Measurement ◽  
Thickness Meter ◽  
Contact Sensing ◽  
Wafer Thinning ◽  
Thinning Process ◽  
Thickness Measurements ◽  
Wafer Surfaces

Wafer thickness meter by reflection spectroscopy is used for on-site thickness inspections in wafer thinning process, because of its excellent properties as high measurement accuracy in very thin wafers inspections by non-contact sensing. In practice, ground surfaces are not ideal flat surfaces. Thus the spectra suffers influences of the surface roughness and the waviness, as modifying spectral features by optical diffusion, and as decreasing the reflection received by dispersion of propagating directivity. In this paper, we investigate how the surface integrities of ground wafer surfaces are involved in the thickness measurements by both theoretical and experimental approach, to investigate the requirements in sample conditions and to guarantee the accuracy of the measurements.

Spectroscopic Measurements of Silicon Wafer Thickness for Backgrinding Process

2011 ◽  
Vol 325 ◽  
pp. 672-677 ◽  
Author(s):  
Teppei Onuki ◽  
Naoto Takagi ◽  
Jun Shimizu ◽  
Hirotaka Ojima ◽  
Li Bo Zhou
Keyword(s):  
Silicon Wafer ◽  
Near Infrared ◽  
Monitoring Tool ◽  
Spectroscopic Measurements ◽  
Wafer Thickness ◽  
Infrared Spectroscopic ◽  
Beer’S Law ◽  
Wafer Thinning ◽  
Thinning Process ◽  
Si Wafer

The optical microgauge system by means of near-infrared spectroscopic measurements was proposed as the thickness monitoring tool in the silicon wafer thinning process. The Fabry-Pelot interferometry and Beer’s law were employed as the principles of the system for extracting the wafer thickness from optical spectroscopic system prototyped in this study. The specifications of the system such as the thickness range and resolution were examined on the prototyped system. The filed test verified the developed system available of monitoring Si wafer as thin as 5 mm.

Manufacturable 300mm Wafer Thinning for 3D Interconnect Applications

2010 ◽  
Vol 1249 ◽  
Author(s):  
Jamal Qureshi ◽  
Raymond Caramto ◽  
Stephen Olson ◽  
Jerry Mase ◽  
Toshihiro Ito ◽  
...  
Keyword(s):  
Thickness Variation ◽  
Force Microscopy ◽  
Critical Elements ◽  
Atomic Force ◽  
Transmission Electron ◽  
Wafer Thickness ◽  
Total Thickness Variation ◽  
Silicon Vias ◽  
Wafer Thinning ◽  
Thinning Process

Abstract3D interconnect wafer-to-wafer or die-to-wafer integration requires a wafer thinning operation to expose copper (Cu)-filled through-silicon vias (TSVs) from the backside of the wafer. The wafer thinning flow uses edge trim, backgrind, backpolish, and chemical mechanical polishing (CMP). This paper presents an overview of the wafer grinding process. We have demonstrated the capability to edge-trim and backgrind 300 mm TSV and non-TSV wafers down to 30 microns (μm) while bonded to a handle wafer. TSV wafers were further processed on a CMP tool to remove the last few microns of Si, exposing the Cu-filled TSVs. Metrology techniques were used to inspect and measure the wafer edge trim and final thinned wafer thickness. The quality of the thinned wafer was characterized by atomic force microscopy (AFM) to observe surface roughness and by transmission electron microscopy (TEM) to quantify crystalline damage below the surface of the thinned wafer. Further characterization included measuring wafer thickness, total thickness variation (TTV), bow, and warp. Exposed TSVs were characterized by laser microscope to measure the height of Cu protrusions. These critical elements of a manufacturing-worthy 300 mm wafer thinning process for 3D are discussed.

scholarly journals Current tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation

2021 ◽  
Author(s):  
N. Surkamp ◽  
A. Gerling ◽  
J. O'Gorman ◽  
M. Honsberg ◽  
S. Schmidtmann ◽  
...  
Keyword(s):  
Thz Radiation ◽  
Wafer Thickness ◽  
Thickness Measurements

scholarly journals E28 Study on silicon wafer thinning process by use of fixed abrasives wheel

2012 ◽  
Vol 2012.9 (0) ◽  
pp. 299-300
Author(s):  
Hironori YAGUCHI ◽  
Libo ZHOU ◽  
Jun SHIMIZU ◽  
Teppei ONUKI ◽  
Hirotaka OJIMA ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Wafer Thinning ◽  
Thinning Process

204 Development of On-Machine 3D Measuring System for Large Size Si Wafer Thinning Process

2008 ◽  
Vol 2008 (0) ◽  
pp. 33-34
Author(s):  
Masashi Ono ◽  
Takahito Mitsuta ◽  
Libo ZHOU ◽  
Jun SHIMIZU
Keyword(s):  
Measuring System ◽  
Large Size ◽  
Wafer Thinning ◽  
Thinning Process ◽  
Si Wafer

Epitaxial layer thickness measurements by reflection spectroscopy

1989 ◽  
Vol 18 (3) ◽  
pp. 361-367 ◽  
Author(s):  
L. E. Tarof ◽  
C. J. Miner ◽  
A. J. Springthorpe
Keyword(s):  
Layer Thickness ◽  
Epitaxial Layer ◽  
Reflection Spectroscopy ◽  
Thickness Measurements

Study on Wafer Thinning Characteristics of Ultimate Diamond Disk

2012 ◽  
Vol 591-593 ◽  
pp. 476-479
Author(s):  
Xu Xing Jin
Keyword(s):  
Cutting Tool ◽  
Cutting Tools ◽  
Polycrystalline Diamond ◽  
Depth Of Cut ◽  
Machining Parameters ◽  
Workpiece Material ◽  
Diamond Disk ◽  
Diamond Cutting Tools ◽  
Wafer Thinning ◽  
Wafer Surfaces

Silicon wafer is machined by diamond cutting tools to certain extent, the cutting tool currently used is polycrystalline diamond (PCD). However, as its cutting edges are not leveled to the same height, it will produce different depth of cut and the stress distribution is uneven on wafer surfaces, in the process of wafer thinning, both the workpiece and the cutting tool are probably damaged, this will increase the production cost accordingly. In this paper, a strategy is described to improve the ability of cutting tool for wafer thinning, a cutting tool named Ultimate Diamond Disk (UDD) designed by Taiwan Wheel Company is recommended, which can reduce both the crack of workpiece and the wear speed of cutting tool. Moreover, an experiment on base of different machining parameters including rotation speed of spindle, feed rate and depth of cut was tested and discussed. As a result, the removal mode of workpiece material and the wafer thinning characteristics of UDD are obtained.

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