Manufacturable 300mm Wafer Thinning for 3D Interconnect Applications

2010 ◽  
Vol 1249 ◽  
Author(s):  
Jamal Qureshi ◽  
Raymond Caramto ◽  
Stephen Olson ◽  
Jerry Mase ◽  
Toshihiro Ito ◽  
...  
Keyword(s):  
Thickness Variation ◽  
Force Microscopy ◽  
Critical Elements ◽  
Atomic Force ◽  
Transmission Electron ◽  
Wafer Thickness ◽  
Total Thickness Variation ◽  
Silicon Vias ◽  
Wafer Thinning ◽  
Thinning Process

Abstract3D interconnect wafer-to-wafer or die-to-wafer integration requires a wafer thinning operation to expose copper (Cu)-filled through-silicon vias (TSVs) from the backside of the wafer. The wafer thinning flow uses edge trim, backgrind, backpolish, and chemical mechanical polishing (CMP). This paper presents an overview of the wafer grinding process. We have demonstrated the capability to edge-trim and backgrind 300 mm TSV and non-TSV wafers down to 30 microns (μm) while bonded to a handle wafer. TSV wafers were further processed on a CMP tool to remove the last few microns of Si, exposing the Cu-filled TSVs. Metrology techniques were used to inspect and measure the wafer edge trim and final thinned wafer thickness. The quality of the thinned wafer was characterized by atomic force microscopy (AFM) to observe surface roughness and by transmission electron microscopy (TEM) to quantify crystalline damage below the surface of the thinned wafer. Further characterization included measuring wafer thickness, total thickness variation (TTV), bow, and warp. Exposed TSVs were characterized by laser microscope to measure the height of Cu protrusions. These critical elements of a manufacturing-worthy 300 mm wafer thinning process for 3D are discussed.

Chemical Wet Etching of Silicon Wafers from a Mixture of Concentrated Acids

2011 ◽  
Vol 264-265 ◽  
pp. 1027-1032 ◽  
Author(s):  
M.R. Ismail ◽  
Wan Jeffrey Basirun
Keyword(s):  
Surface Roughness ◽  
Surface Condition ◽  
Surface Damage ◽  
Wet Etching ◽  
Tem Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Wet Chemical ◽  
Thinning Process

Warpage on the backside of silicon wafer after thinning process is examined. The thinning process includes back-grinding (BG) and wet chemical etching (WCE). Results of wafer warpage were compared to sub-surface damage from Transmission Electron Microscopy (TEM) analysis and showed that sub-surface damage on the backside of the silicon 100 would induce high wafer warpage, and reduced wafer strength. Further studies from surface roughness and topography of each surface finish is obtained by Atomic Force Microscopy (AFM) and SEM show that low surface roughness is in accordance with smooth surface condition, which comes after the wet etching process.

A Systematic Approach to Thinning Silicon Wafers to the sub-40μm Thickness Range

2006 ◽  
Vol 3 (2) ◽  
pp. 86-94 ◽  
Author(s):  
Parthiban Arunasalam ◽  
Matthew H. Gordon ◽  
Leonard W. Schaper
Keyword(s):  
Systematic Approach ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Thickness Variation ◽  
Wafer Thickness ◽  
Chemical Etch ◽  
Custom Made ◽  
Carrier Wafer ◽  
Total Thickness Variation ◽  
Wafer Thinning

The present trend in electronics packaging is the stacking of die at the wafer or chip level. However to ensure stacked chip packages maintain overall low height and weight package profile, silicon wafers have to undergo extensive wafer thinning processes. In this work, a systematic approach to thinning silicon wafers down to sub-40μm in thickness is presented. This paper will cover a detailed three stage wafer thinning method, which includes the mechanical back-lapping method for the bulk removal process and a combination of mechanical polishing and spin-spray wet chemical etch method for the fine removal wafer thinning process. The results will show that by just utilizing the mechanical back-lapping and mechanical polishing process the wafers can be easily thinned from 380μm to less than 50μm with ±2.5μm Total Thickness Variation (TTV). These back-lapped wafers are then further thinned by the spin-spray etching method to achieve final wafer thickness of less than 40μm. The paper will also show that by utilizing a modified carrier wafer, the handling of these sub-40μm ultra-thin wafers do not require custom made tools and can be easily integrated into existing wafer handling tools.

Scanning tunneling microscopy and atomic force microscopy: New tools for biology

1989 ◽  
Vol 47 ◽  
pp. 778-779
Author(s):  
CE Bracker ◽  
P. K. Hansma
Keyword(s):  
Physical Property ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Small Scale ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
New Family ◽  
Small Probe ◽  
Atomic Force ◽  
Transmission Electron

A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Microscopic studies of fast phase transformations in GeSbTe films

2001 ◽  
Vol 674 ◽  
Author(s):  
Ralf Detemple ◽  
Inés Friedrich ◽  
Walter Njoroge ◽  
Ingo Thomas ◽  
Volker Weidenhof ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Data Transfer ◽  
Optical Measurements ◽  
Transfer Rates ◽  
Force Microscopy ◽  
High Data ◽  
Atomic Force ◽  
Transmission Electron ◽  
Future Success ◽  
Microscopic Studies

ABSTRACTVital requirements for the future success of phase change media are high data transfer rates, i.e. fast processes to read, write and erase bits of information. The understanding and optimization of fast transformations is a considerable challenge since the processes only occur on a submicrometer length scale in actual bits. Hence both high temporal and spatial resolution is needed to unravel the essential details of the phase transformation. We employ a combination of fast optical measurements with microscopic analyses using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM measurements exploit the fact that the phase transformation from amorphous to crystalline is accompanied by a 6% volume reduction. This enables a measurement of the vertical and lateral speed of the phase transformation. Several examples will be presented showing the information gained by this combination of techniques.

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