scholarly journals Current tuned slotted Y‐branch laser for wafer thickness measurements with THz radiation

2021 ◽  
Author(s):  
N. Surkamp ◽  
A. Gerling ◽  
J. O'Gorman ◽  
M. Honsberg ◽  
S. Schmidtmann ◽  
...  
Keyword(s):  
Thz Radiation ◽  
Wafer Thickness ◽  
Thickness Measurements

Wide Range and Accurate Measurement of Wafer Thickness Gauge Using Optical Spectral Analyzer

2016 ◽  
Vol 1136 ◽  
pp. 581-585
Author(s):  
Teppei Onuki ◽  
Yutaro Ebina ◽  
Hirotaka Ojima ◽  
Jun Shimizu ◽  
Libo Zhou
Keyword(s):  
Spectral Resolution ◽  
Optical Spectrum ◽  
Dynamic Range ◽  
Spectrum Analyzer ◽  
High Spectral Resolution ◽  
Thickness Gauge ◽  
Optical Spectrum Analyzer ◽  
Wafer Thickness ◽  
Wide Range ◽  
Thickness Measurements

Applicability of a generic optical spectrum analyzer that is familiar with laser experiments is investigated for on-site wafer thickness measurements in the thinning process, to resolve the issues regarding mismatch in the thickness range of previous thickness measurement system. The optimizations in terms of the spectral range, the spectral resolution and the dynamic range are successfully conducted by use of the optical spectrum analyzer. Owing to both high spectral resolution and wide dynamic range in near infrared spectral measurements, full range thickness measurements for the initial thickness 775μm and the terminal thickness 1μm and nanometer order accuracy are implemented.

Influence of Surface Integrity in Silicon Wafer Thickness Measurements by Reflection Spectroscopy

2014 ◽  
Vol 1017 ◽  
pp. 681-685
Author(s):  
Teppei Onuki ◽  
Ryusuke Ono ◽  
Hirotaka Ojima ◽  
Jun Shimizu ◽  
Li Bo Zhou
Keyword(s):  
Reflection Spectroscopy ◽  
Flat Surfaces ◽  
Wafer Thickness ◽  
High Measurement ◽  
Thickness Meter ◽  
Contact Sensing ◽  
Wafer Thinning ◽  
Thinning Process ◽  
Thickness Measurements ◽  
Wafer Surfaces

Wafer thickness meter by reflection spectroscopy is used for on-site thickness inspections in wafer thinning process, because of its excellent properties as high measurement accuracy in very thin wafers inspections by non-contact sensing. In practice, ground surfaces are not ideal flat surfaces. Thus the spectra suffers influences of the surface roughness and the waviness, as modifying spectral features by optical diffusion, and as decreasing the reflection received by dispersion of propagating directivity. In this paper, we investigate how the surface integrities of ground wafer surfaces are involved in the thickness measurements by both theoretical and experimental approach, to investigate the requirements in sample conditions and to guarantee the accuracy of the measurements.

Analysis of electroless nickel thin films

1991 ◽  
Vol 49 ◽  
pp. 510-511 ◽  
Author(s):  
C. W. Price ◽  
E. F. Lindsey
Keyword(s):  
Thin Films ◽  
Inertial Confinement Fusion ◽  
Electroless Nickel ◽  
Inertial Confinement ◽  
Plating Bath ◽  
X Ray ◽  
Nickel Thin Films ◽  
Nickel Deposits ◽  
Confinement Fusion ◽  
Thickness Measurements

Thickness measurements of thin films are performed by both energy-dispersive x-ray spectroscopy (EDS) and x-ray fluorescence (XRF). XRF can measure thicker films than EDS, and XRF measurements also have somewhat greater precision than EDS measurements. However, small components with curved or irregular shapes that are used for various applications in the the Inertial Confinement Fusion program at LLNL present geometrical problems that are not conducive to XRF analyses but may have only a minimal effect on EDS analyses. This work describes the development of an EDS technique to measure the thickness of electroless nickel deposits on gold substrates. Although elaborate correction techniques have been developed for thin-film measurements by x-ray analysis, the thickness of electroless nickel films can be dependent on the plating bath used. Therefore, standard calibration curves were established by correlating EDS data with thickness measurements that were obtained by contact profilometry.

X-RAY STUDIES RELATED TO COATING THICKNESS MEASUREMENTS

1984 ◽  
Vol 45 (C2) ◽  
pp. C2-33-C2-36 ◽  
Author(s):  
D. A. Sewell ◽  
I. D. Hall ◽  
G. Love ◽  
J. P. Partridge ◽  
V. D. Scott
Keyword(s):  
Coating Thickness ◽  
X Ray ◽  
Thickness Measurements

Zirconia thickness measurements for irradiated fuel rods: an approach to better understanding measurement error

2011 ◽  
pp. 107-114
Author(s):  
B. Lacroix ◽  
T. Martella ◽  
M. Pras ◽  
M. Masson-Fauchier ◽  
L. Fayette
Keyword(s):  
Measurement Error ◽  
Fuel Rods ◽  
Thickness Measurements ◽  
Irradiated Fuel

Advanced Fringe Analysis Techniques in Circuit Edit

2006 ◽  
Author(s):  
R.K. Jain ◽  
T. Malik ◽  
T.R. Lundquist ◽  
C.-C. Tsao ◽  
W.J. Walecki
Keyword(s):  
Imaging System ◽  
Success Rates ◽  
Endpoint Detection ◽  
Fringe Analysis ◽  
Analysis Techniques ◽  
Aspect Ratios ◽  
Slope Correction ◽  
Trench Area ◽  
And Control ◽  
Thickness Measurements

Abstract Novel Fabry Perot [1] fringe analysis techniques for monitoring the etching process with a coaxial photon-ion column [2] in the Credence OptiFIB are reported. Presently the primary application of these techniques in circuit edit is in trenching either from the front side or from the backside of a device. Optical fringes are observed in reflection geometry through the imaging system when the trench floor is thin and semi-transparent. The observed fringes result from optical interference in the etalon formed between the trench floor (Si in the case of backside trenching) and the circuitry layer beyond the trench floor. In-situ real-time thickness measurements and slope correction techniques are proposed that improve endpoint detection and control planarity of the trench floor. For successful through silicon edits, reliable endpoint detection and co-planarity of a local trench is important. Reliable endpoint detection prevents milling through bulk silicon and damaging active circuitry. Uneven trench floor thickness results in premature endpoint detection with sufficient thickness remaining in only part of the trench area. Good co-planarity of the trench floor also minimizes variability in the aspect ratios of the edit holes, hence increasing success rates in circuit edit.

Correcting for Spherical Aberrations in Solid Immersion Microscopy Using a Deformable Mirror

2011 ◽  
Author(s):  
Y. Lu ◽  
E. Ramsay ◽  
C. Stockbridge ◽  
F. H. Koklu ◽  
A. Yurt ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Error Correction ◽  
Deformable Mirror ◽  
Wafer Thickness ◽  
Wavefront Error ◽  
Substrate Wafer ◽  
Thickness Error

Abstract We present a method for correcting spherical aberrations in solid immersion microscopy through the use of a deformable mirror. Aberrations in solid immersion imaging for failure analysis can be induced through off-axis imaging, errors in lens fabrication or mismatch of design and substrate wafer thickness. RMS wavefront error correction of 30% is demonstrated in the case of substrate wafer thickness error.

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