Research on ZnS Buffer Layer by RF Magnetron Sputtering for Cu(In,Ga)Se2 Solar Cells

2011 ◽  
Vol 194-196 ◽  
pp. 2259-2262
Author(s):  
Yin Qun Hua ◽  
Jie Yu ◽  
Rui Fang Chen ◽  
Cheng Chen ◽  
Rui Li Xu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Buffer Layer ◽  
Uv Spectroscopy ◽  
Visible Region ◽  
Wavelength Region ◽  
Deposition Process ◽  
Short Wavelength Region

Nanocrystalline ZnS thin films are prepared on glass substrates under various deposition conditions (radio frequency power, and sputtering pressure) using radio frequency magnetron sputtering at room temperature. Through optimization of deposition process, very thin and uniform ZnS layer was deposited to minimize the light blocking effect in short wavelength region. This paper investigates the influence of ZnS buffer layer by magnetron sputtering,and analyses structure,surface topography,and optical properties of ZnS films by using X-ray diffraction (XRD), UV-spectroscopy measurements and scanning electronic microscope (SEM) analysis techniques. Findings show that the high-quality ZnS thin films with a good crystallinity and optical properties, which is zinc blende cubic structure with a preferred orientation, can be grown by sputtering at 300W and 0.6Pa. The films exhibit the optical transparency as high as 80% in the visible region, and the resultant ZnS thin films have a high crystallinity, low defect concentration and good optical properties with the band gap of 3.50eV.

scholarly journals Surface Analysis and Optical Properties of Cu-Doped ZnO Thin Films Deposited by Radio Frequency Magnetron Sputtering

Coatings ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 266 ◽  
Author(s):  
Guo-Ju Chen ◽  
Sheng-Rui Jian ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Wavelength Region ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Cu Doping ◽  
Doped Zno

In this study, Cu-doped ZnO (CZO) thin films were grown on glass substrates by using the radio frequency magnetron sputtering technique. The effects of Cu doping on the structural, surface morphological, optical properties, and wettability behaviors of CZO thin films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Visible spectroscopy, and contact angle measurement, respectively. The XRD results indicated that all CZO thin films were textured, having a preferential crystallographic orientation along the hexagonal wurtzite (002) axis. The average transmittance in the visible wavelength region was above 80% for all CZO thin films. The optical band gap of the CZO films decreased from 3.18 to 2.85 eV when the Cu-doping was increased from 2% to 10%. In addition, the water contact angle measurements were carried out to delineate the Cu-doping effects on the changes in the surface energy and wettability of the films.

Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application

2007 ◽  
Vol 124-126 ◽  
pp. 999-1002 ◽  
Author(s):  
Han Na Cho ◽  
Jang Woo Lee ◽  
Su Ryun Min ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Visible Region ◽  
Film Surface ◽  
Optical Transmittance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Indium Zinc Oxide

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.

Effect of Different Radios of Two Complexes on the Structural and Optical Properties of ZnS Thin Films

2014 ◽  
Vol 986-987 ◽  
pp. 47-50
Author(s):  
Jin Shang ◽  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Visible Region ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
High Concentration ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Direct Band ◽  
Cbd Method

ZnS thin films were deposited at three different radios of V(NH3·H2O)/V(N2H4) on glass substrates by chemical bath deposition (CBD) method without stirring the deposition bath during the deposition process. The structural and optical properties were analyzed by X-ray diffraction (XRD) and UV-VIS spectrophotometer. The results showed that ZnS thin film deposited at the radio of V(NH3·H2O)/V(N2H4)=15:15 is higher than that of the other two different solutions. With the radio of V(NH3·H2O)/V(N2H4) decreasing from 15:5 to 15:15, homogenous precipitation of Zn (OH)2easily forms in the bath, but ZnS precipitation first become suppressed and then easily forms in solution. It means that the concentration of OH-ion increases with the volume of N2H4increasing, which accelerates the formation of Zn (OH)2. However, when the volume of N2H4increases to 15mL, relatively high concentration of OH-ion not only accelerates the formation of Zn (OH)2, but also be used to the hydrolysis of thiourea. The average transmissions of all the ZnS films from three different solutions (V(NH3·H2O)/V(N2H4)=15:5, 15:10 and 15:15) are greater than 90% for wavelength values in visible region. The direct band gaps range from 3.80 to 4.0eV. The ZnS film deposited for 2.5h with the radio of V(NH3·H2O)/V(N2H4)=15:15 has the cubic structure only after single deposition.

Analysis of ZAO Thin Films by DC Reaction Magnetron Sputtereing

2011 ◽  
Vol 687 ◽  
pp. 585-590
Author(s):  
Feng Lu ◽  
Cheng Hai Xu ◽  
Li Shi Wen
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Wurtzite Structure ◽  
Crystal Phase ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Polycrystalline Hexagonal Wurtzite Structure

The high quality ZAO thin films were produced by DC reaction magnetron sputtering technology. The XRD, electrical and optical properties of ZAO thin films were particularly investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure，and Al2O3 crystal phase are not found. At the same time，the high quality ZAO films with the minimum resistivity of 4.5x×10-4Ω·㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

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