Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity

2011 ◽  
Vol 222 ◽  
pp. 3-7 ◽  
Author(s):  
Hiroshi Inokawa ◽  
Wei Du ◽  
Mitsuru Kawai ◽  
Hiroaki Satoh ◽  
Atsushi Ono ◽  
...  
Keyword(s):  
Low Voltage ◽  
Single Photon ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Oxide Semiconductor ◽  
Single Photon Detection ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Low Voltage Operation ◽  
Operation Speed

A unique single-photon detector is reported, which utilizes scaled-down silicon-on- insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with single-electron sensitivity, and features low-voltage operation without carrier multiplication and low dark counts. Primary single-photon detection characteristics are presented, and then several issues related to operation speed and quantum efficiency are to be addressed.

A Superconducting Nanowire Single-Photon Detector (SnSPD) System for Ultra Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuits

2013 ◽  
Author(s):  
Franco Stellari ◽  
Alan J. Weger ◽  
Seongwon Kim ◽  
Dzmitry Maliuk ◽  
Peilin Song ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Single Photon ◽  
Vlsi Circuits ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
Superconducting Nanowire ◽  
Emission Light

Abstract In this paper, we present a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to ultra low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits. The 9 µm-diameter detector is housed in a closed loop cryostat and fiber coupled to an existing Emiscope III tool for collecting spontaneous emission light from the backside of integrated circuits (ICs) down to a world record 0.5 V supply voltage in a few minutes.

Time-Resolved Optical Measurements from 0.13μm CMOS Technology Microprocessor Using a Superconducting Single-Photon Detector

2003 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
Alan J. Weger ◽  
Moyra K. McManus
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Single Photon ◽  
Cmos Technology ◽  
Optical Measurements ◽  
Acquisition Time ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Time Resolved ◽  
The One

Abstract In this paper we examine the use of the Superconducting Single-Photon Detector (SSPD) [1] for extracting electrical waveforms on an IBM microprocessor fabricated in a 0.13µm technology with 1.2V nominal supply voltage. Although the detector used in our experiments is prototype version of the one discussed in [1] demonstrating lower performance, we will show that it provides a significant reduction in acquisition time for the collection of optical waveforms, thus maintaining the usability of the PICA technique for present and future low voltage technologies.

Timing Analysis of a Microprocessor PLL Using High Quantum Efficiency Superconducting Single Photon Detector (SSPD)

2004 ◽  
Author(s):  
Peilin Song ◽  
Franco Stellari ◽  
James P. Eckhardt ◽  
Timothy McNamara ◽  
Ching-Lung Tong
Keyword(s):  
Quantum Efficiency ◽  
Single Photon ◽  
Timing Analysis ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Phase Detection ◽  
Photon Detector ◽  
Single Photon Detector ◽  
High Quantum Efficiency ◽  
High Quantum

Abstract This paper describes the analysis of a Phase-Locked Loop (PLL) internal phase detection circuit built in IBM’s 0.13 µm Silicon On Insulator (SOI) CMOS technology by using the Picosecond Imaging Circuit Analysis (PICA) [1,2] tool equipped with the high quantum efficiency Superconducting Single-Photon Detector (SSPD) [3,4]. Signals corresponding to the internal nodes of the PLL are for the first time measured and compared to circuit simulations in order to characterize the behavior of the different components of the circuit.

Advanced Optical Testing of an Array in 65 nm CMOS Technology

2005 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
Todd A. Christensen
Keyword(s):  
Low Voltage ◽  
Single Photon ◽  
Cmos Technology ◽  
Optical Measurements ◽  
Readout Circuit ◽  
Optical Testing ◽  
Optical Analysis ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Collision Problem

Abstract In this paper we present the advanced optical testing of an array fabricated in IBM’s 65 nm SOI CMOS technology, using the Picosecond Imaging Circuit Analysis (PICA) [1-11] tool equipped with the Superconducting Single-Photon Detector (SSPD) [12,13]. Based on the results of the optical analysis we were able to confirm a time collision problem in the readout circuit of the array. In the following sections we will also discuss the use of an innovative optical packaging for testing chips requiring wire-bonding, along with record low voltage optical measurements, down to 0.7 V.

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