Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

2011 ◽  
Vol 276 ◽  
pp. 21-25
Author(s):  
S.O. Gordienko ◽  
A. Nazarov ◽  
A.V. Rusavsky ◽  
A.V. Vasin ◽  
N. Rymarenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Rf Plasma ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Variable Range Hopping ◽  
Si Substrate ◽  
Sic Film

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

Hydrogen plasma treatment confers enhanced bioactivity to silicon carbide-based nanowires promoting osteoblast adhesion

2021 ◽  
Vol 121 ◽  
pp. 111772
Author(s):  
Benedetta Ghezzi ◽  
Paola Lagonegro ◽  
Giovanni Attolini ◽  
Pasquale Mario Rotonda ◽  
Christine Cornelissen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Osteoblast Adhesion

Investigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma Treatment

2019 ◽  
Vol 19 (4) ◽  
pp. 2306-2309
Author(s):  
Chien-Hung Wu ◽  
Kow-Ming Chang ◽  
Yi-Ming Chen ◽  
Yu-Xin Zhang ◽  
Yu-Hsuan Tan
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Electrical Characteristics

scholarly journals Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

2007 ◽  
Vol 401-402 ◽  
pp. 218-221
Author(s):  
Yoshifumi Yamashita ◽  
Yoshifumi Sakamoto ◽  
Yoichi Kamiura ◽  
Takeshi Ishiyama
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Si Substrate ◽  
Low Resistivity

scholarly journals Enhancement of electrical properties of Al-doped ZnO thin films (AZO) by hydrogene plasma treatment

2013 ◽  
Vol 16 (4) ◽  
pp. 5-12
Author(s):  
Phuong Hoai Pham ◽  
Trung Kien Pham ◽  
Trung Quang Tran
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Treatment Time ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Wave Length ◽  
X Ray Diffraction ◽  
Electrical Stability ◽  
X Ray ◽  
Doped Zno

Transparent and conductive Al-doped ZnO (AZO) films were prepared by magnetron sputtering at temperature 200oC onto glass substrate. The films were treated with hydrogen plasma at temperatures 200oC from 30 to 60 minutes with 200 mW/cm2 power plasma. The optical, electrical and structural characteristics of the AZO coatings were analyzed as a function of the treatment time by spectrophotometry,Hall effects measurements, and X-ray diffraction. Results of X-ray diffraction analysis showed that the structure of the plasma-treated film did not change compared to that of the asdeposited film. The electrical resistivity of the AZO films decreased after H2 plasma treatment. The plasma treatment not only significantly decreased film resistivity but enhanced electrical stability as aging in air ambient. The average optical transmittance in the wave length range of 300 to 700 nm was 85%. These results were significant in application of AZO thin film as transparent electrode for a-Si:H based thin film solar cell prepared by PE-CVD method in next step.

scholarly journals Низкотемпературный синтез нанокристаллов alpha-SiC

2019 ◽  
Vol 61 (12) ◽  
pp. 2447
Author(s):  
К.Х. Нусупов ◽  
Н.Б. Бейсенханов ◽  
Д.И. Бакранова ◽  
С. Кейнбай ◽  
А.А. Турахун ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Ir Spectroscopy ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plasma Ions ◽  
Sic Film

Abstract Thick SiC_ x films have been deposited on a c -Si surface by radiofrequency (rf) magnetron sputtering (150 W, 13.56 MHz, Ar flow 2.4 L/h, 0.4 Pa) of graphite and silicon targets. The X-ray diffraction study shows that fast annealing of the SiC_ x film deposited on the c -Si surface for 3 h leads to the low-temperature (970°C) formation of hexagonal structural phases α-SiC (6 H -SiC and other) along with the cubic modification of silicon carbide β-SiC. The IR spectroscopy has shown the formation of SiC nanocrystal nuclei due to the energy action of the rf plasma ions on the upper layer of the SiC film during its growth. The data of X-ray reflectometry demonstrate a high density of the films up to 3.59 g/cm^2 as a result of formation of dense C and SiC clusters in the layers under action of the rf plasma.

Sign in / Sign up

Export Citation Format

Share Document