scholarly journals Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

2007 ◽  
Vol 401-402 ◽  
pp. 218-221
Author(s):  
Yoshifumi Yamashita ◽  
Yoshifumi Sakamoto ◽  
Yoichi Kamiura ◽  
Takeshi Ishiyama
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Si Substrate ◽  
Low Resistivity

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

2011 ◽  
Vol 276 ◽  
pp. 21-25
Author(s):  
S.O. Gordienko ◽  
A. Nazarov ◽  
A.V. Rusavsky ◽  
A.V. Vasin ◽  
N. Rymarenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Rf Plasma ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Variable Range Hopping ◽  
Si Substrate ◽  
Sic Film

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
High Efficiency ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
High Efficiency Solar Cells ◽  
Wide Gap

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

Influence of Hydrogen Plasma Treatment Upon Native Oxides Plasma Grown on INP

1992 ◽  
Vol 284 ◽  
Author(s):  
E. D. Belyakova ◽  
S. V. Belyakov ◽  
L. S. Berman ◽  
A. T. Gorelenok ◽  
I. N. Karimov ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Negative Charge ◽  
Hydrogen Plasma ◽  
Flat Band ◽  
Band Shift ◽  
Native Oxides ◽  
Effective Oxide Charge ◽  
Reduced Density ◽  
Density Of Interface States ◽  
Mis Structures

Investigations of plasma grown native oxides on indium phosphide carried out recently [1,2] have shown that these oxides exhibit properties which are promising to be used in MIS structures on InP, due to their stable composition which includes [InxPyOz]n polyphosphate phase mainly and due to reduced density of interface states (Nss<1011 eV−1 cm−2). It has been shown also that MIS structures with plasma native oxides exhibit C-V characteristics shifted towards positive values of voltage bias. The flat band shift is assigned to a negative charge injected into oxide film during plasma oxidation. The presence of this negative charge in plasma grown native oxides on InP may cause instability of electric properties of MIS structures [2].The aim of this work was to make an attempt to influence upon negative effective oxide charge density by means of hydrogen plasma treatment.

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