Investigation of Electrical Characteristics on AP-PECVD Fabricated Amorphous IGZO TFTs with Hydrogen Plasma Treatment

2019 ◽  
Vol 19 (4) ◽  
pp. 2306-2309
Author(s):  
Chien-Hung Wu ◽  
Kow-Ming Chang ◽  
Yi-Ming Chen ◽  
Yu-Xin Zhang ◽  
Yu-Hsuan Tan
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Electrical Characteristics

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures

2011 ◽  
Vol 276 ◽  
pp. 21-25
Author(s):  
S.O. Gordienko ◽  
A. Nazarov ◽  
A.V. Rusavsky ◽  
A.V. Vasin ◽  
N. Rymarenko ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Plasma Treatment ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Rf Plasma ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Variable Range Hopping ◽  
Si Substrate ◽  
Sic Film

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
High Efficiency ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
High Efficiency Solar Cells ◽  
Wide Gap

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance
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