Buffer Layer Effects on the Structure and Morphology of SmCo/Cu Thin Films

In this paper, we investigated the structure of SmCo films with different thickness and the effects of Cr buffer layer on the structure and morphology of SmCo/Cu thin films. Our data revealed that the magnetic properties of the samples were enhanced by the crystallization of SmCo which was promoted by the optimized Cu underlayers. We also found that the surface roughness can be decreased by Cr layer and the texture can be improved by prolonging the annealing time for thick SmCo film. Thus, we concluded that the magnetic properties of SmCo/Cu films can be further optimized by varying the thickness of Cr buffer layers.

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Структурные и магнитные свойства систем Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Ge-p/Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/Co

Журнал технической физики ◽

10.21883/jtf.2019.02.47082.198-18 ◽

2019 ◽

Vol 89 (2) ◽

pp. 268

Author(s):

А.В. Кобяков ◽

И.А. Турпанов ◽

Г.С. Патрин ◽

Р.Ю. Руденко ◽

В.И. Юшков ◽

...

Keyword(s):

Surface Roughness ◽

Magnetic Properties ◽

Buffer Layer ◽

Tunnel Junctions ◽

Buffer Layers ◽

Artificial Substrates ◽

Plasma Sputtering ◽

Ion Plasma

AbstractThe Al_2O_3/Ge- p /Al_2O_3/Co system with an Al_2O_3 buffer layer deposited by ion-plasma sputtering has been experimentally investigated. The dependences of the magnetic properties of cobalt on the rate of its deposition by ion-plasma sputtering and rate of deposition of preceding layers have been established. It is shown that the technique used to obtain buffer layers can significantly reduce the surface roughness of the next layers. The obtained buffer layers can be used as artificial substrates for growing heterostructures with tunnel junctions.

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Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.881-883.1117 ◽

2014 ◽

Vol 881-883 ◽

pp. 1117-1121 ◽

Cited By ~ 1

Author(s):

Xiang Min Zhao

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Buffer Layers ◽

Zno Thin Films ◽

Zno Films ◽

Si Substrates ◽

Atomic Force ◽

Structure Morphology ◽

Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽

10.1557/adv.2016.544 ◽

2016 ◽

Vol 1 (37) ◽

pp. 2635-2640 ◽

Cited By ~ 5

Author(s):

Adele Moatti ◽

Reza Bayati ◽

Srinivasa Rao Singamaneni ◽

Jagdish Narayan

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetic Properties ◽

Frequency Factor ◽

Misfit Strain ◽

Buffer Layers ◽

Intrinsic Defects ◽

Domain Matching Epitaxy ◽

Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

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Surface Roughness and Magnetic Properties of Ni and ${\rm Ni}_{78}{\rm Fe}_{22}$ Thin Films on Polyethylene Naphthalate Organic Substrates

IEEE Transactions on Magnetics ◽

10.1109/tmag.2010.2045346 ◽

2010 ◽

Vol 46 (6) ◽

pp. 1356-1359 ◽

Cited By ~ 6

Author(s):

Hideo Kaiju ◽

Nubla Basheer ◽

Kenji Kondo ◽

Akira Ishibashi

Keyword(s):

Thin Films ◽

Surface Roughness ◽

Magnetic Properties ◽

Organic Substrates ◽

Polyethylene Naphthalate

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Enhanced Magnetic Properties of BiFeO3 Thin Films by Doping: Analysis of Structure and Morphology

Nanomaterials ◽

10.3390/nano8090711 ◽

2018 ◽

Vol 8 (9) ◽

pp. 711 ◽

Cited By ~ 32

Author(s):

Yilin Zhang ◽

Yuhan Wang ◽

Ji Qi ◽

Yu Tian ◽

Mingjie Sun ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Sol Gel ◽

Exchange Interactions ◽

Ferromagnetic Behavior ◽

Ferromagnetic Properties ◽

Structure And Morphology ◽

Related Diversification ◽

Lattice Distortions ◽

Mn Doped

The improvement of ferromagnetic properties is critical for the practical application of multiferroic materials, to be exact, BiFeO3 (BFO). Herein, we have investigated the evolution in the structure and morphology of Ho or/and Mn-doped thin films and the related diversification in ferromagnetic behavior. BFO, Bi0.95Ho0.05FeO3 (BHFO), BiFe0.95Mn0.05O3 (BFMO) and Bi0.95Ho0.05Fe0.95Mn0.05O3 (BHFMO) thin films are synthesized via the conventional sol-gel method. Density, size and phase structure are crucial to optimize the ferromagnetic properties. Specifically, under the applied magnetic field of 10 kOe, BHFO and BFMO thin films can produce obvious magnetic properties during magnetization and, additionally, doping with Ho and Mn (BHFMO) can achieve better magnetic properties. This enhancement is attributed to the lattice distortions caused by the ionic sizes difference between the doping agent and the host, the generation of the new exchange interactions and the inhibition of the antiferromagnetic spiral modulated spin structure. This study provides key insights of understanding the tunable ferromagnetic properties of co-doped BFO.

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Structure, Electrical and Magnetic Properties of Thin Films of La1−xMxMnO3 on Si

MRS Proceedings ◽

10.1557/proc-562-51 ◽

1999 ◽

Vol 562 ◽

Author(s):

N. N. Mateeva ◽

P. C. Hogan ◽

K. H. Dahmen

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Transition Temperature ◽

Buffer Layers ◽

Ferromagnetic Transition ◽

Electrical And Magnetic Properties ◽

Insulator Metal Transition ◽

Composition Structure

ABSTRACTThin films of lanthanum manganates doped with Ca2+, Sr2+, Ba2+ and Pb2+ have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La0.8Al0.2O3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transition temperature.

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Impact of Deposition Rate on the Structural and Magnetic Properties of Sputtered Ni/Cu Multilayer Thin Films

Zeitschrift für Naturforschung A ◽

10.1515/zna-2017-0207 ◽

2017 ◽

Vol 73 (1) ◽

pp. 85-90 ◽

Cited By ~ 4

Author(s):

Ali Karpuz ◽

Salih Colmekci ◽

Hakan Kockar ◽

Hilal Kuru ◽

Mehmet Uckun

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Deposition Rate ◽

High Rate ◽

Cubic Phase ◽

High Deposition Rate ◽

Multilayer Thin Films ◽

Face Centered Cubic ◽

Deposition Rates ◽

Cu Films

AbstractThe structural and corresponding magnetic properties of Ni/Cu films sputtered at low and high deposition rates were investigated as there is a limited number of related studies in this field. 5[Ni(10 nm)/Cu(30 nm)] multilayer thin films were deposited using two DC sputtering sources at low (0.02 nm/s) and high (0.10 nm/s) deposition rates of Ni layers. A face centered cubic phase was detected for both films. The surface of the film sputtered at the low deposition rate has a lot of micro-grains distributed uniformly and with sizes from 0.1 to 0.4 μm. Also, it has a vertical acicular morphology. At high deposition rate, the number of micro-grains considerably decreased, and some of their sizes increased up to 1 μm. The surface of the Ni/Cu multilayer deposited at the low rate has a relatively more grainy and rugged structure, whereas the surface of the film deposited at the high rate has a relatively larger lateral size of surface grains with a relatively fine morphology. Saturation magnetisation, Ms, values were 90 and 138 emu/cm3 for deposition rates of 0.02 and 0.10 nm/s, respectively. Remanence, Mr, values were also found to be 48 and 71 emu/cm3 for the low and high deposition rates, respectively. The coercivity, Hc, values were 46 and 65 Oe for the low and high Ni deposition rates, respectively. The changes in the film surfaces provoked the changes in the Hc values. The Ms, Mr, and Hc values of the 5[Ni(10 nm)/Cu(30 nm)] films can be adjusted considering the surface morphologies and film contents caused by the different Ni deposition rates.

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Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.774-776.954 ◽

2013 ◽

Vol 774-776 ◽

pp. 954-959

Author(s):

Xiao Jing Wang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Carrier Concentration ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Hexagonal Structure ◽

Buffer Layers ◽

Zno Thin Films ◽

Average Transmittance ◽

Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

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