Effect of Vacuum Annealing Temperature on Properties of Ga-Doped ZnO Films Deposited by DC Magnetron Reactive Sputtering

2012 ◽  
Vol 485 ◽  
pp. 348-351
Author(s):  
Ji Sen Zhang ◽  
Hui Dong Yang ◽  
Bo Huang ◽  
Song Yu ◽  
Li Xin Zeng
Keyword(s):  
Internal Stress ◽  
Annealing Temperature ◽  
Vacuum Annealing ◽  
Reactive Sputtering ◽  
Visible Range ◽  
Zno Films ◽  
Average Transmittance ◽  
Doped Zno ◽  
Dc Magnetron Reactive Sputtering ◽  
Crystallization Degree

The Ga-doped ZnO thin films (GZO) were deposited at room temperature by DC magnetron reactive sputtering. The influence of vacuum annealing temperature on the morphology, internal stress, optical and electrical properties were investigated. The results showed that with the rise of annealing temperature, the grain size increased, the preferred orientation and crystallization degree became better, the internal stress reduced, the resistivity firstly decreased slightly before 350°C and then increased sharply. The minimum resistivity of 1.32×10-3Ω•cm was obtained at 350°C. The annealing temperature had a very big influence on the transmittance, and the average transmittance was about 80% in the visible range.

Formation of Al-doped ZnO films by dc magnetron reactive sputtering

2001 ◽  
Vol 48 (3-4) ◽  
pp. 194-198 ◽  
Author(s):  
M. Chen ◽  
Z.L. Pei ◽  
C. Sun ◽  
L.S. Wen ◽  
X. Wang
Keyword(s):  
Reactive Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Dc Magnetron Reactive Sputtering

scholarly journals Nucleation/Growth and Optical Proprieties of Co-doped ZnO Electrodeposited on ITO Substrate

2021 ◽  
Vol 12 (5) ◽  
pp. 6776-6787
Keyword(s):  
Cyclic Voltammetry ◽  
Growth Mechanism ◽  
Supporting Electrolyte ◽  
Saturated Calomel Electrode ◽  
Nucleation And Growth ◽  
Visible Range ◽  
Zno Films ◽  
Doped Zno ◽  
Nucleation And Growth Mechanism ◽  
Co Doped

A Co-doped ZnO layer was prepared by electrodeposition method on indium doped tin oxide (ITO) substrate using a cathodic reduction from nitrate medium with different doping percentages of cobalt. The bath temperature was controlled at 70 °C. The films were cathodically electrodeposited in a bath containing 5 mM Zn(NO3)2. 6H2O, while the source of Co is Co(NO3)2.6H2O where 0.1M KNO3 was used as supporting electrolyte. The nucleation and growth mechanism of Co-doped ZnO nuclei have been studied by cyclic voltammetry and chronoamperometry. The cyclic voltammetry shows that the electrodeposition of ZnO and Co-doped ZnO at a negative potential around -1.0 V versus saturated calomel electrode (SCE) is a quasi-reversible reaction controlled by the diffusion process. Comparing current transients curves obtained by the chronoamperometric method with the theoretical curves of current density j versus t ½ allows us to say that the nucleation is 3D instantaneous, as shown in SEM analysis. The presence of Co does not modify the nucleation and growth mechanism. The XRD patterns show that the substitution of zinc by cobalt does not change the würtzite crystal structure, but the crystallite size decreases with the cobalt percentage. The transmittance spectra indicate that the Co-doped ZnO films are transparent in the visible range. The optical gap increases with the doping percentage of cobalt.

Effect of annealing temperature on optical properties of Er-doped ZnO films prepared by sol–gel method

2008 ◽  
Vol 148 (1-3) ◽  
pp. 35-39 ◽  
Author(s):  
Fanyong Ran ◽  
Lei Miao ◽  
Sakae Tanemura ◽  
Masaki Tanemura ◽  
Yongge Cao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno ◽  
Er Doped

Photocatalytic Properties of ZnO and Ag Doped ZnO Thin Films

2014 ◽  
Vol 685 ◽  
pp. 3-6
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Structural Features ◽  
Photocatalytic Properties ◽  
Zno Thin Films ◽  
Molar Ratio ◽  
Zno Films ◽  
Doped Zno ◽  
Excellent Adhesion

Pure ZnO thin films and Ag doped ZnO thin films were prepared on quartz substrates by sol-gel process. Structural features and UV absorption spectrum have been studied by XRD and UV-Vis-Nir scanning spectrophotometer. Taking phenol as pollutants, further study of the effect of different annealing temperature and Ag dopant amount of ZnO films on photocatalytic properties was carried out. The results showed that, the optimal annealing temperature on photocatalytic degradation of phenol in this experiment was 300 °C, the best molar ratio of ZnO and Ag was 30:1, which was better than pure ZnO film greatly. Excellent adhesion, recyclable and efficient degradation Ag doped ZnO thin films were found in this experiment.

Effects of doping concentration and annealing temperature on properties of highly-oriented Al-doped ZnO films

2006 ◽  
Vol 287 (1) ◽  
pp. 78-84 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Wei-Chun Chen ◽  
Fang-I Lai ◽  
Chin-Pao Cheng ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Annealing Temperature ◽  
Zno Films ◽  
Doped Zno

Enhancement of electrical conductivity of sol–gel doped ZnO films through Zr doping and vacuum annealing

2016 ◽  
Vol 31 (4) ◽  
pp. 234-240 ◽  
Author(s):  
P. V. Rajkumar ◽  
K. Ravichandran ◽  
K. Karthika ◽  
B. Sakthivel ◽  
B. Muralidharan
Keyword(s):  
Electrical Conductivity ◽  
Vacuum Annealing ◽  
Sol Gel ◽  
Zno Films ◽  
Doped Zno

scholarly journals Effect of Gallium Incorporation on the Properties of ZnO Thin Films

2019 ◽  
Author(s):  
Sema Kurtaran ◽  
Serhat Aldağ ◽  
Göksu Öföfoğlu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Atomic Force ◽  
Doped Zno ◽  
Ga Doping

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.

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