Influence of Sputtering Power on the Structure and Photoelectric Property of Ga Doped ZnO Films

2012 ◽  
Vol 591-593 ◽  
pp. 922-926
Author(s):  
Lei Wu ◽  
Qing Nan Zhao ◽  
Gang Wu ◽  
Deng Kui Miao
Keyword(s):  
Thin Films ◽  
Visible Light ◽  
Light Transmittance ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Hall Effect Measurements ◽  
Doped Zno

Ga-doped ZnO (GZO) films were prepared on glass substrates at 523K temperature by non-reactive DC magnetron sputtering. The effects of sputtering power on microstructure and properties of the GZO films were investigated by X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), Hall effect measurements and UV-Vis-NIR spectrometer. The results show that GZO thin films exhibit high c-axis-orientation, and the intensity of peak increase as the enhanced of sputtering power; the increase of power will reduce the film’s visible-light transmittance, but for all of the GZO thin films the average transmittance of the visible-light is above 80%. The sheet resistance of GZO films decreases when the sputtering power gradually heightened from 80W to 200W. The lowest resistivity of 6.559×10-4Ω•cm can be obtained in the condition of the sputtering power is 100W, and the lowest square resistance is 7.9Ω/□.

Effect of Ruthenium Concentration on Structural and I-V Characteristics of ZnO Thin Films by Sol–Gel Method

2017 ◽  
Vol 05 (01) ◽  
pp. 1750004
Author(s):  
R. Vettumperumal ◽  
S. Kalyanaraman ◽  
R. Thangavel
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Doped Zno

Nanocrystalline ruthenium (Ru)-doped ZnO thin films on sapphire substrate was prepared using sol–gel method by spin coating technique. The structural and I-V characteristics of Ru doped ZnO thin films were studied from the X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) analysis and Raman spectroscopy. X-ray diffraction (XRD) results revealed that the deposited films belonged to hexagonal wurtzite structure with c-axis orientation. It is also confirmed from the Raman spectra. Enhancement of longitudinal optical (LO) phonon is observed by the strong electron–phonon interaction. An observed increment in sheet resistance with increase in dopant percentage of Ru (1–2[Formula: see text]mol%) in ZnO films was found and better I-V characteristic behavior was observed at 1[Formula: see text]mol% of Ru-doped ZnO thin films. Trap limited current flow inside the material was calculated from the log I versus log V plot in the higher voltage region.

The Effect of Sputtering Power on the Properties of Zr-Ga Co-Doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 680 ◽  
pp. 75-80
Author(s):  
Xiao Li Wu ◽  
Hui Wang ◽  
Yu Zhen Yuan
Keyword(s):  
Magnetron Sputtering ◽  
Visible Range ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Conductive Films ◽  
Sputtering Power ◽  
Doped Zno ◽  
Co Doped

Zr-Ga co-doped ZnO transparent conductive films were prepared on glass substrates by DC magnetron sputtering at room temperature. The influence of sputtering power on the structural, electrical and optical properties of Zr-Ga co-doped ZnO films was investgated by X-ray diffraction, scanning electron microscopy (SEM), digital four-point probe and optical transmission spectroscopy. The lowest resistivity of the Zr-Ga co-doped ZnO films is 3.02×10-4Ω﹒cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (3.34 eV).

scholarly journals STRUCTURAL AND OPTICAL PROPERTIES OF ZnO:Ga THIN FILMS DEPOSITED ON ITO/GLASS SUBSTRATES FOR OPTOELECTRONIC APPLICATIONS

2021 ◽  
Vol 20 (1) ◽  
pp. 84-93
Author(s):  
Dumitru Rusnac ◽  
◽  
Ion Lungu ◽  
Lidia Ghimpu ◽  
Gleb Colibaba ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
X Ray Diffraction ◽  
Homogeneous Surface ◽  
X Ray ◽  
Glass Substrates ◽  
Nanostructured Thin Films ◽  
Ito Glass ◽  
Doped Zno

Doped (with GaCl 3 ), undoped ZnO and ITO/ZnO:Ga nanostructured thin films are synthesized using the spray pyrolysis method. The doped ZnO thin films are synthesized at the atomic ratio of Ga/Zn added in the starting solution fixed at 1, 2, 3, and 5. Gallium-doped ZnO films synthesized on glass/ITO substrates are annealed at 450C in different environments: vacuum, oxygen, and hydrogen. X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and current–voltage (I–V) measurements are applied to characterize the structural properties, composition, surface morphology, and electrical properties of ZnO:Ga nanostructured thin films. X-ray diffraction analysis shows that ZnO:Ga films deposited on glass substrates have a dense and homogeneous surface with a hexagonal structure. The ZnO:Ga films deposited on glass/ITO substrates are composed of two phases, namely, hexagonal ZnO and cubic ITO. The I–V characteristics show the presence of good ohmic contacts between Al and In metals and ZnO:Ga thin films regardless of the nature of the substrate and the annealing atmosphere.

scholarly journals Preparation and Characterization of Indium and Gallium doped Transparent ZnO Films for Solar Cell Applications

2018 ◽  
Vol 34 (5) ◽  
pp. 2325-2331
Author(s):  
Reuben Seth Richter ◽  
A. Yaya ◽  
D. Dodoo-Arhin ◽  
B. Agyei-Tuffour ◽  
Robinson Juma Musembi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Spray Pyrolysis Deposition ◽  
Hall Effect Measurements

In this work, the effect of indium (In) and gallium (Ga) dopants on the structural, optical and electrical properties of ZnO thin films was studied. ZnO thin films were deposited on glass substrates at 400°C using the spray pyrolysis deposition technique. X-ray diffraction (XRD) results indicated that both undoped and doped ZnO films had (002) preferred orientation. The undoped ZnO films were found to exhibit high transmittance above 80%, while indium-doped (In:ZnO) and gallium-doped (Ga:ZnO) films had transmittance above 60% and 70% respectively. From the Hall Effect measurements, doping improved the conductivity of the ZnO thin films however, In:ZnO films showed higher electrical conductivity compared to Ga:ZnO films. Electron probe microanalysis (EPMA) results were used to confirm the presence of the respective dopants in the thin film samples.

Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flat Surfaces ◽  
Atomic Force ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

Effect of Solution Concentration in the Optical and Structural Properties of ZnO Thin Films

2018 ◽  
Vol 18 ◽  
pp. 113-117 ◽  
Author(s):  
Abdelkader Hafdallah ◽  
Aimane Guedri ◽  
Mohamed Salah Aida ◽  
Nadhir Attaf
Keyword(s):  
Thin Films ◽  
Solution Concentration ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Optical Band Gaps ◽  
Optical Films ◽  
Spray Technique ◽  
Uv Visible

In the present work we prepared conducting and transparent thin films ZnO with different solution concentrations by pyrolysis spray technique on glass substrates. These films are obtained starting from solution of zinc acetate dehydrate [Zn(CH3COO)2.2H2O] dissolved in methanol, at substrate temperature fixed T =350°C with a concentration of solution vary from 0.05-0.2 M. Our interest is on the investigation of solution concentration on the structural and optical properties of these films. The X-ray diffraction (XRD) results showed that the synthesized ZnO films are polycrystalline with preferred orientation along the (002) plane. The optical films characterization was carried out by the UV-Visible transmission. The optical gap and films disorder were deduced from the absorption spectra, The values of optical band gaps vary between 3.24 and 3.43 eV.

scholarly journals Optical Properties and Raman Scattering Investigation of Ag Doped ZnO Thin Film Prepared by Two-Step Solution-Based Deposition Method

2015 ◽  
Vol 773-774 ◽  
pp. 739-743
Author(s):  
A.N. Afaah ◽  
N.A.M. Asib ◽  
Aadila Aziz ◽  
Ruziana Mohamed ◽  
Kevin Alvin Eswar ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Scattering ◽  
Ultra Violet ◽  
Peak Shift ◽  
Zno Thin Films ◽  
Zno Films ◽  
Deposition Method ◽  
Immersion Method ◽  
Glass Substrates ◽  
Doped Zno

Mist-atomization deposition method was applied in order to grow ZnO nanoparticles on Au-seeded glass substrates acting as seeded template. Ag doped ZnO thin films were deposited on ZnO seeded templates by solution-immersion method. The influence of Ag doping content on the optical and Raman scattering properties of ZnO films were systematically investigated by UV-Vis transmittance measurement measured by ultra-violet visible spectroscopy (UV-Vis) and Raman scattering spectrum measured by Raman spectroscopy under room temperature. From UV-Vis transmittance measurement, the incorporation of Ag dopant to the ZnO makes the transmittance wavelength shifted to the shorter wavelength as compared to the pure ZnO. From Raman spectra, 4 cm-1 downshift is observed in Ag-doped thin films as compared to pure ZnO thin films. This Raman peak shift shows that a tensile stress existed in the Ag-doped ZnO film.

Structural, optical and magnetic properties of highly oriented transition metal (Mn/Co/Ni/Cu) doped ZnO thin films prepared by PLD

2012 ◽  
Vol 1454 ◽  
pp. 239-244 ◽  
Author(s):  
Arun Aravind ◽  
M.K. Jayaraj ◽  
Mukesh Kumar ◽  
Ramesh Chandra
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Room Temperature Ferromagnetism ◽  
Visible Region ◽  
Band Edge ◽  
Zno Films ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Axis Orientation ◽  
Doped Zno

ABSTRACTZnO doped with transition metal (TM) thin films were grown by pulsed laser deposition. XRD pattern reveals that all the ZnTMO films have c-axis orientation normal to the substrate. The reciprocal space mapping shows that the crystallinity of ZnTMO film deteriorates at higher doping of TM. All the TM doped ZnO films have transmittance greater than 75% in the visible region. The band gap of the ZnTMO thin films shows red shift on doping with Ni and Cu where as blue shift is observed for Co and Mn which increases with TM concentration. The copper doped ZnO thin film shows green PL emission at 542 nm along with the band edge emission at 385 nm. But other TM doping shows only band edge emission (385nm) and its intensity decreases at higher doping percentage. The presence of non-polar E2high and E2lowRaman modes in thin films indicates that ‘TM’ doping do not alter the wurtzite structure of ZnO. The magnetic studies of the TM doped ZnO shows room temperature ferromagnetism

ZnO Films Deposited on Various Diamond Film Substrates with Different Surface Roughness

2011 ◽  
Vol 287-290 ◽  
pp. 2347-2350
Author(s):  
Rong Fan ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Diamond Film ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Axis Orientation ◽  
X Ray ◽  
Force Microscopy

ZnO thin films were deposited by radio frequency (R. F.) magnetron sputtering on various diamond film substrates with different surface roughness. The influence of surface roughness on structural properties and surface morphology of ZnO thin films was investigated by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. Only on the nanocrystalline and free-standing diamond substrates, ZnO films with preferential c-axis orientation and smooth surface were obtained.

scholarly journals Structure, optical and electrical properties of Nb-doped ZnO transparent conductive thin films prepared by co-sputtering method

2019 ◽  
Vol 09 (06) ◽  
pp. 1950048
Author(s):  
Yantao Liu ◽  
Wenxia Wang ◽  
Jianping Ma ◽  
Ying Wang ◽  
Wei Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Lower Surface ◽  
Zno Thin Films ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Average Transmittance ◽  
Ultraviolet Range ◽  
Doped Zno ◽  
Conductive Thin Films

Nb-doped ZnO thin films were fabricated on glass substrates by using co-sputtering with direct-current and radio frequency magnetron sputtering. The structures, optical and electrical performances of Nb-doped ZnO thin films were investigated. The results showed that all thin films have (0 0 2) [Formula: see text]-axis preferential orientation. The minimum resistivity of [Formula: see text][Formula: see text]cm and the maximum carrier concentration of [Formula: see text][Formula: see text][Formula: see text] were obtained at the direct-current sputtering power of 10[Formula: see text]W, respectively. Nb-doped ZnO thin films have also shown high average transmittance of 89.6%, and lower surface roughness of 2.74[Formula: see text]nm. Meanwhile, a distinct absorption edge in the ultraviolet range of 300–400[Formula: see text]nm was observed in absorbance, the optical band gap of Nb-doped ZnO thin films illustrates an increased tendency with increasing Nb concentration.

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