Investigation on Fine Polishing Technique of Silicon Wafer

2009 ◽  
Vol 60-61 ◽  
pp. 232-235 ◽  
Author(s):  
Quan Cheng Gong ◽  
Jian Zhu ◽  
Shi Xing Jia ◽  
Jing Wu
Keyword(s):  
Surface Roughness ◽  
Optimum Condition ◽  
Silicon Wafer ◽  
Surface Condition ◽  
Polishing Process ◽  
Wafer Polishing

This paper presents a kind of fine polishing technique that adopts three-step polishing procedure and keeping-wafer-wet method. In order to remove the damaged layer created by lapping process or improve surface condition of silicon wafer, polishing process is needed. In this paper, techniques of improving the surface roughness of silicon are studied, three different polishing processes are presented, and optimum condition has been attained. Experiments of Si-Si bonding are also performed, and results show that after polishing ends, keeping surface of wafer wet is necessary to avoid slurry agglomerating.

The Performance and Optimization of Slurry on the Double Sided Polishing Process of Silicon Wafer

2007 ◽  
Vol 359-360 ◽  
pp. 324-328
Author(s):  
Wei Li ◽  
Gang Xiang Hu ◽  
Xiao Dong Hu ◽  
Xiao Zhen Hu
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Process Parameters ◽  
Ph Value ◽  
Removal Rate ◽  
Polished Surface ◽  
Polishing Process ◽  
Stock Removal

This study compares the effectiveness of different polishing slurries for Double Sided Polishing process of Silicon wafer in the polished surface roughness and stock removal rate, discusses the mechanism of Double Sided Polishing for silicon wafer with different type slurries, also the influence of the pH value, temperature and concentration of the slurries are discussed in this paper. Furthermore, by the optimization of the process parameters, the ultra-smooth of polished surface of silicon wafer has been got with higher efficient.

A New Polishing Pad of EVA-Adhesive-Dressed-with-SiC-Grits Polishing Face and its Applications in Silicon Wafer Polishing

2010 ◽  
Vol 126-128 ◽  
pp. 539-544
Author(s):  
Sung Lin Tsai ◽  
Fuang Yuan Huang ◽  
Biing Hwa Yan ◽  
Yao Ching Tsai
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Ethylene Vinyl Acetate ◽  
Grit Size ◽  
Taguchi Methods ◽  
Absorption Time ◽  
Polishing Pad ◽  
Wheel Turning ◽  
Wafer Polishing

This paper presents a new polishing pad with polishing silicon surface composed of a layer of Ethylene-vinyl acetate (EVA) adhesive pad coated with SiC grits. A set of polishing parameters: coating SiC grit size, concentration of SiC grit in slurry, polishing load, polishing wheel turning speed, and absorption time of polishing pad were identified with the Taguchi Methods for optimum polishing effect in terms of roughness of polished silicon surface. A surface roughness of 0.026 μm Ra can be obtained with the following values: grit size at 1.2 μm (both coated on pad and mixed in slurry), concentration of SiC grit in slurry at 25%, polishing load at 50 gram, turning speed at 10,000 rpm, absorption time of polishing pad at 15 minutes.

Effect of Process Parameters on Surface Roughness in the Cloth Wheel Polishing of Stainless Steel

2014 ◽  
Vol 548-549 ◽  
pp. 496-500
Author(s):  
S. Sonthimool ◽  
S. Prombanpong ◽  
Viboon Tangwarodomnukun
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Optimum Condition ◽  
Significant Role ◽  
Process Parameters ◽  
Spindle Speed ◽  
Polishing Process

This paper aims at studying the effect of polishing parameters on surface roughness by using the cloth wheel polishing process. Stainless steel was used as a specimen in this study. The investigation firstly accounted for the comparison between two polishing compounds, and the best one was used to be applied in a set of experiment. The effect of spindle speed, current and polishing time on the surface roughness of stainless steel was examined, and the results showed that polishing time and current played the significant role in degree of roughness. The optimum condition under the range of parameters considered in this work was determined, whose surface roughness was about 0.0466 μm.

Investigation into the Polishing of Stainless Steel Using Sisal Wheels

2014 ◽  
Vol 548-549 ◽  
pp. 491-495
Author(s):  
P. Tevinpibanphan ◽  
S. Prombanpong ◽  
Viboon Tangwarodomnukun
Keyword(s):  
Surface Roughness ◽  
Stainless Steel ◽  
Optimum Condition ◽  
Processing Time ◽  
Abrasive Machining ◽  
Polishing Process ◽  
Work Surface ◽  
Polishing Force ◽  
Current Setting ◽  
Force Time

A polishing process is generally used for improving work surface quality through the abrasive machining scheme. In this study, a stainless steel cookware was polished by using a sisal wheel and its surface roughness was examined. A comparison of three different sisal wheels was initially made to evaluate their performance in terms of capability to achieve the required surface finish against the processing time. The polishing force, time and velocity were the three main parameters, taken into consideration in this study. The optimum condition of 61 m/s, 15 seconds and 65 N for polishing velocity, time and force was suggested, respectively. After implementing the optimum condition and comparing to the current setting, the processing time can be reduced by half.

Development of Waxless Wafer Mounting System for Silicon Wafer Polishing Process

2013 ◽  
Vol 339 ◽  
pp. 762-765
Author(s):  
Kyoung Jin Kim
Keyword(s):  
Silicon Wafer ◽  
Jet Impingement ◽  
Water Jet ◽  
Silicon Wafers ◽  
Production Yield ◽  
Polishing Process ◽  
Industry Standard ◽  
Wafer Polishing

In the silicon wafer polishing process, the mounting of wafer on the polishing head could be greatly influential in final quality of finished wafers. This paper focuses on the waxless wafer mounting technique which could replace the traditional wax wafer mounting. Mounting of wafers on the carrier block using a wetted porous template provides a simple way of securing wafer on polishing head for precision wafer polishing. Demounting of wafers from the porous pad is carried out by using the water jet impingement which takes only a couple of seconds for wafer demounting. A series of wafer polishing tests of 8 inch silicon wafers using the present wafer mounting system found that the developed waxless wafer mounting could be quite suitable for producing the wafers of the excellent surface qualities by meeting industry standard such as SBIR, LLS, and production yield.

A Study on the Characteristics of a Wafer Final Polishing Process at Various Machining and Temperature Variation

2012 ◽  
Vol 565 ◽  
pp. 296-301
Author(s):  
Sung Hyun Kim ◽  
Sang Gyun Lee ◽  
Seung Gun Choi ◽  
Woong Kirl Choi ◽  
Eun Sang Lee ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Optimum Condition ◽  
Temperature Variation ◽  
Wafer Surface ◽  
Optimum Process ◽  
Process Conditions ◽  
Polishing Process ◽  
Operation Speed ◽  
Head Unit ◽  
Ultra Precision

The polishing is one of the important methods in manufacturing of silicon wafer and in thinning of completed device wafer. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, down-force, slurry ratio are investigated, time is used as a fixed factor. This study will report the evaluation on surface of wafer by dependent of varying platen, chuck rpm, temperature variation, and oscillation which affect it has on the surface roughness. In this experiment, it is determined the optimum condition for polishing silicon wafers. By using optimum condition, it helps to achieve an ultra precision mirror like surface.

Analysis of Fixed Abrasive Pads with a Nano-Sized Diamond for Silicon Wafer Polishing

2009 ◽  
Vol 76-78 ◽  
pp. 410-415 ◽  
Author(s):  
Cheng Yi Shih ◽  
Pei Lum Tso ◽  
James C. Sung
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
High Hardness ◽  
Wafer Surface ◽  
Distilled Water ◽  
Wafer Polishing ◽  
Fixed Abrasive Pad ◽  
Polishing Pads ◽  
Fixed Abrasive ◽  
Free Abrasive

Current polishing pads cannot polish a workpiece without using slurry with free abrasive. The new slurry is required to be continually poured into the working area, so more than half of the slurry may be lost from the table without contacting the wafer surface; this leads to economic and environmental problems. In the current work, the fixed abrasive pad was used, where nano-sized diamond abrasives were embedded in the polishing pad; distilled water, rather than slurry, was used. The effect of various fixed abrasive pad designs on polishing characteristics during silicon wafer polishing was investigated. Moreover, the primary function of fixed abrasive was to remove the rough parts of silicon wafer as they were being polished. Consequently, it needed to disperse the nano-sized abrasives into the pad material with high hardness value; this way, working abrasives are not pressed into the pad material. Furthermore, with the use of a pad conditioner, the interior working abrasives were exposed to the pad surface. As a result, the best outcome of using the fixed abrasive pad with a nano-sized diamond was a surface roughness of Ra 0.47 nm.

scholarly journals Ultrasonic dispersion method used in glass polishing experiment

2021 ◽  
Vol 13 (4) ◽  
pp. 168781402110118
Author(s):  
Zenan Chu ◽  
Tao Wang ◽  
Qiang He ◽  
Kai Zhao
Keyword(s):  
Surface Roughness ◽  
Rare Earth ◽  
Surface Morphology ◽  
Ultrasonic Method ◽  
Average Surface Roughness ◽  
Polishing Process ◽  
Ultrasonic Dispersion ◽  
Processing Efficiency ◽  
Average Surface ◽  
Evaluation Indexes

To solve the problems of low processing efficiency and poor glass surface quality when using rare earth polishing powder to grind super-hard K9 glass. The potential, phase structure, surface morphology, and particle size distribution of the nano-rare earth polishing powder were characterized. Compare the evaluation indexes such as polishing efficiency, surface morphology, and contact angle after the polishing process is changed. The results of the comparative study show that the average surface roughness of the glass after heating ultrasonic polishing process is 0.9064 nm, the polishing rate reaches 0.748 μm/min, the average surface roughness of the glass without heating ultrasonic polishing process is 1.3175 nm, and the polishing rate reaches 0.586 μm/min, the ultrasonic assisted polishing process is superior to the conventional polishing process. The heating ultrasonic method provides experimental basis for precise and rapid processing.

Application of Taguchi and Response Surface Methodologies for Surface Roughness in Rotary Tool Polishing Hardness Mould Steels

2011 ◽  
Vol 87 ◽  
pp. 82-89
Author(s):  
Potejanasak Potejana ◽  
Chakthong Thongchattu
Keyword(s):  
Surface Roughness ◽  
Response Surface ◽  
Laser Scanning ◽  
Cutting Speed ◽  
Optimal Level ◽  
Confocal Laser ◽  
Milling Machine ◽  
Cnc Milling ◽  
Polishing Process ◽  
Cnc Milling Machine

This research proposes a new application of 3-axis CNC milling machine for polishing the 60 HRC hardness steels. The rotary polishing tools are designed by refer to the end-mill ball nose’s design. The diamond powder are coated in rotary polishing tools by resinoid bonding method and concentrated in 4.4 karat/cm2. The Zig-milling tool paths are used to polish the hardness steel. After polishing, the confocal laser scanning microscope is used to analyze the arithmetic mean surface roughness of the hardness steels. The L12 orthogonal array of the Taguchi’s method is selected to conduct the matrix experiment to determine the optimal polishing process parameters. The diamond grit size and cutting speed of the rotary polishing tools, feed rate and step over of the tool path, the depth of polishing process penetration, and polishing time are used to study. The combination of the optimal level for each factor of the hardness steel polishing process are used to study again in the confirmation experiment. The predicted signal to noise ratio of smaller - the better under optimal condition are calculated by using the data from the experiment. The combination of the optimal level for each factor are used to study again in the confirmation experiment and the result show that polishing time was a dominant parameter for the surface roughness and the next was depth of penetration. The response surface design is then used to build the relationship between the input parameters and output responses. The experimental results show that the integrated approach does indeed find the optimal parameters that result in very good output responses in the rotary polishing tools polished hardness mould steel using CNC milling machine. The mean surface roughness of hardness steel polishing process is improved by the diamond rotary tools with the 3-axis CNC milling machine.

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