Structural, Optical and Electrical Characteristics of Polycrystalline ZnO Thin Film Prepared by Sol-Gel Spin-Coating Method

2013 ◽  
Vol 667 ◽  
pp. 24-29
Author(s):  
Mohamad Hafiz Mamat ◽  
A.A.A. Halim ◽  
Mohd Zainizan Sahdan ◽  
S. Amizam ◽  
Zuraida Khusaimi ◽  
...  

The effect of annealing temperatures on the Zinc Oxide (ZnO) thin films properties has been investigated. 1.0 M ZnO solution was prepared by sol-gel method as coating solution for ZnO thin films deposition process. The thin films deposition was conducted by spin-coating technique on the silicon and glass substrates. The scanning electron microscopy (SEM) images reveal the evolution of ZnO surface morphology with annealing temperatures. The crystallinity improvement occurred at higher annealing temperature as shown by x-ray diffraction (XRD) result. The optical properties found to be varied at different annealing temperatures. The current-voltage (I-V) measurement results suggested the improvement of ZnO thin film electrical properties with annealing temperatures.

2013 ◽  
Vol 667 ◽  
pp. 371-374 ◽  
Author(s):  
M. Basri ◽  
Mohd Nor Asiah ◽  
Mohd Khairul bin Ahmad ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop Mahmood

Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.


2008 ◽  
Vol 63 (7-8) ◽  
pp. 440-444 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti

For effectively fabricating nanocrystalline ZnO thin films by the sol-gel method, the relationships between the temperature of the heat treatment and the quality of the ZnO thin films was observed. The decomposition of the sol was analyzed by TG-DTA. The orientation of the c-axis of the ZnO thin film was identified by XRD. The morphology was observed and estimated by SEM. The experimental results did show that the orientation of the c-axis is determined by the pre-heating and annealing temperatures, and that the grain size and roughness of the ZnO thin films are mainly influenced by the annealing temperature. A qualified ZnO thin film was prepared by using a sol-gel with a preheating temperature of 275 °C for 10 min and an annealing temperature of 550 °C for 60 min.


2013 ◽  
Vol 6 (4) ◽  
pp. 100-106
Author(s):  
Aqeel Ali Al-Attar ◽  
Safaa Mohammad Hasony ◽  
Ali Hussein Ali

ZnO thin films have been deposited onto the glass-substrates by the sol-gel spin coating method at different chuck rotation rates. This method was used for the preparation of thin films on the important semiconductors ІІ-VІ. The effect of deposition parameters on the structural, optical and electrical properties of the ZnO thin film was investigated. Zinc acetate dehydrate, 2- methoxethanol and monoethanolamine (MEA) were used as a starting material, solvent and stabilizer, respectively. XRD of the dried gel showed that weight loss continued until 300°C, with smallest particle size at 400 rpm spin coating speed.


2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti

Glass plate-supported nanostructure ZnO thin films were deposited by sol-gel spin coating. Films were preheated at275∘Cfor 10 minutes and annealed at 350, 450, and550∘Cfor 80 minutes. The ZnO thin films were transparent ca 80–90% in visible range and revealed that absorption edges at about 370 nm. Thec-axis orientation improves and the grain size increases which was indicated by an increase in intensity of the (002) peak at34.4∘in XRD corresponding to the hexagonal ZnO crystal. The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of some operational parameters such as the number of layer and reusability of ZnO nanostructure thin film were examined. The results showed that the five-layer coated glass surfaces have a very high photocatalytic performance.


2011 ◽  
Vol 312-315 ◽  
pp. 1132-1136 ◽  
Author(s):  
Mohamad Hafiz Mamat ◽  
Zuraida Khusaimi ◽  
Mohamad Mahmood Rusop

Nanostructured zinc oxide (ZnO) thin films were prepared through sol-gel method and spin-coating technique. ZnO thin films then were annealed at temperature of 350°C, 400°C, 450°C and 500°C. The thin films were characterized using field emission scanning electron microscope (FESEM), UV-VIS-NIR spectrophotometer and photoluminescence (PL) spectrofluorometer for morphology and optical properties study. The morphology study indicates that the particle size of ZnO increased with annealing temperatures. All thin films are optically transparent (~ 80 % in transmittance) in the visible light-NIR region. PL spectra reveal improved UV emission with annealing temperatures up to 500°C.


2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.


2013 ◽  
Vol 701 ◽  
pp. 167-171 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
Azlinda Ab Azlinda ◽  
F.S. Husairi ◽  
M. Rusop ◽  
Saifollah Abdullah

Zinc acetate dehydrate as starting material along with diethanolamine as stabilizer, and isopropyl as a solvent were used to synthesis ZnO thin films in different low molarities. Sol-gel spin coating method was used in depositing ZnO on porous silicon substrate surface. In other to prepare substrate, p-type silicon wafer was etched by dilute hydrofluoric acid to modify the surface becomes porous. Field Emission Scanning Electron Microscopy (FESEM) was employed to study the surface morphology. It is found that ZnO thin films were successfully deposited on the substrates which are composed of ZnO nanoparticles with size ~16 nm to ~22nm. Atomic Force Microscopy (AFM) was used to investigate the surface roughness of thin film. The result shows that the surface roughness is increase as the increases of molarities. Photoluminescence (PL) spectra were done in range of 350 nm to 800 nm. The result shows peaks belonging to ZnO, ZnO defects, and porous silicon respectively are appeared.


2012 ◽  
Vol 457-458 ◽  
pp. 42-45
Author(s):  
Wen Wu Zhong ◽  
Fa Min Liu ◽  
Qin Yi Shi ◽  
Wei Ping Chen

Al and Sb codoped ZnO thin films were prepared through a sol-gel spin coating method on glass substrates and annealed in different atmospheres. The XRD results show that the films have hexagonal wurtzite ZnO structure and SEM results reveal that the films annealed in hydrogen consist of hexagonal nanorods with diameters of 84 nm and lengths of 422 nm, however the films annealed in other atmospheres without nanorods. The photoluminescence (PL) spectrum shows that the emission peaks of the films are mostly at 390 and 460 nm, and the film annealed in hydrogen has the strongest intensity of peak at 390 nm and the film annealed in air has the strongest intensity of peak at 460 nm. The electrical properties show that the films annealed in hydrogen have a lowest resistivity of 1.02×10-3 Ω•cm.


2015 ◽  
Vol 1109 ◽  
pp. 401-404
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
M.F. Malik ◽  
A. Ishak ◽  
Mohamad Rusop

The nanoStructured ZnO thin films were prepared by Spin coating technique on glass substrates at various layers. The structural and optical properties were characterized by field emission scanning electron microscopy (FESEM) and UV-Vis-NIR respectively. The surface morphology reveals that the nanostructured ZnO thin films become densely packed as the thickness increased. The average particles size of ZnO thin film estimated from FESEM images at different layers of 1, 3, 5, 7, 9 were 20nm, 28nm, 36nm, 39nm and 56nm, respectively. The surface roughness of thin films was increase as the thin film thickness increases. The results show all films are transparent in the visible region (400-800 nm) with average transmittance above 85 %. Meanwhile, the optical band gap was decrease as the film thickness increases. The conductivity of ZnO thin film slightly improved as the thickness increased as measured through two probes 1-V measurement system.


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
I. Saurdi ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
M. Rusop

Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.


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