Nickel Oxide Coated on Pretreated MWCNTs as an Electrode for Supercapacitor

2013 ◽  
Vol 829 ◽  
pp. 654-658
Author(s):  
Lida Mahmoudi ◽  
Farzad Mahboubi ◽  
Moreteza Saghafi Yazdi
Keyword(s):  
Nickel Oxide ◽  
Thermal Annealing ◽  
Nickel Hydroxide ◽  
Annealing Temperature ◽  
Electrochemical Characteristics ◽  
Sem Images ◽  
Electroactive Materials ◽  
Nanotubular Structure ◽  
Individual Cnts ◽  
The Individual

Nickel oxide/carbon nanotubes (NiO/CNTs) composite materials for supercapacitor are prepared by chemically depositing of nickel hydroxide onto CNTs pretreated by ultrasonication and followed by thermal annealing at 200-300°C. A series of NiO/CNTs composites with different weight ratios of CNTs and different annealing temperature are synthesized via the same route. The scanning electron microscope (SEM) images show that the nucleation of the nickel hydroxide formed on the outer walls of CNTs due to ultrasonic cavitations, and then nickel oxide coated uniformly on the outer surface of the individual CNTs after thermal annealing. The NiO/CNTs electrode presents a maximum specific capacitance of 254 F/g as well as a good cycle life in 2 M KOH electrolyte. The good electrochemical characteristics of NiO/CNTs composite can be attributed to the three-dimensionally interconnected nanotubular structure with a thin film of electroactive materials.

scholarly journals Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams

2013 ◽  
Vol 103 (20) ◽  
pp. 203114 ◽  
Author(s):  
Servin Rathi ◽  
Jin-Hyung Park ◽  
In-yeal Lee ◽  
Min Jin Kim ◽  
Jeong Min Baik ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Joule Heating ◽  
Annealing Temperature ◽  
Insulator Metal Transition

Investigation of the influence of the mode of heat treatment of the initial powder on the efficiency of sintering zirconium ceramics by dilatometry

2021 ◽  
Vol 103 (3) ◽  
pp. 17-24
Author(s):  
S. Shevelev ◽  
◽  
E. Sheveleva ◽  
O. Stary ◽  
Keyword(s):  
Thermal Annealing ◽  
Zirconium Dioxide ◽  
Annealing Temperature ◽  
Average Particle Size ◽  
Average Particle ◽  
Sintered Ceramic ◽  
Tetragonal Modification ◽  
Thermal Sintering ◽  
Powder Compacts ◽  
High Degree

Using methods of synchronous thermal and X-ray structural analyzes applied to zirconium dioxide powders partially stabilized with yttrium obtained by chemical coprecipitation the processes of dehydration of these powders during annealing in air have been investigated. Using the dilatometry method, the regularities of compaction of powder compacts have been investigated with thermal sintering. It was found that the resulting powders mainly consist of the tetragonal modification zirconium dioxide and are nano-sized. The average particle size was 25 nm. The resulting powders are characterized by a high degree of agglomeration. It is shown that an increase in the thermal annealing temperature from 500 to 700ºС leads to partial baking of individual particles inside the agglomerate, and causes the formation of hard agglomerates, the presence of which complicates the processes of compaction and subsequent sintering. The presence of such agglomerates prevents the production of ceramics with high mechanical characteristics: density and porosity. Thermal annealing temperature increase leads to a decrease in the density of the sintered ceramic and a decrease in its hardness.

scholarly journals Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2248 ◽  
Author(s):  
Hadi Mahmodi ◽  
Md Hashim ◽  
Tetsuo Soga ◽  
Salman Alrokayan ◽  
Haseeb Khan ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Infrared ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Infrared Region ◽  
Alloy Formation ◽  
Phase Mixing ◽  
Si Substrates ◽  
Msm Photodetector

In this work, nanocrystalline Ge1−xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1−xSnx alloys were investigated. The nanocrystalline Ge1−xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1−xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1−xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).

Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

2009 ◽  
Vol 255 (11) ◽  
pp. 5861-5865 ◽  
Author(s):  
X.Q. Zhao ◽  
C.R. Kim ◽  
J.Y. Lee ◽  
C.M. Shin ◽  
J.H. Heo ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Annealing Temperature ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays

Interdiffusion in MBE-Grown Symmetrically and Asymmetrically Strained Si/Si1−xGex Superlattices Investigated by Ion Scattering

1992 ◽  
Vol 263 ◽  
Author(s):  
B. Holländer ◽  
R. Butz ◽  
S. Mantl
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Buffer Layers ◽  
Arrhenius Law ◽  
Ion Scattering ◽  
Strained Si ◽  
The Individual ◽  
Interdiffusion Coefficients ◽  
Fourier Algorithm

ABSTRACTThe interdiffusion in MBE-grown Si/Si1−xGex superlattices was measured by Rutherford backscattering spectrometry. The superlattices consisted of 5 periods of 100 !A Si and 100 !A Si1−xGex layers with Ge concentrations, x, between 0.20 and 0.70. Both, asymmetrically strained superlattices, grown on Si(100), as well as symmetrically strained superlattices, grown on relaxed Si1−y.Gey buffer layers were investigated. Rapid thermal annealing in the temperature range between 900°C and 1125°C leads to significant interdiffusion between the individual layers, indicated by a decrease of the amplitudes of the backscattering spectra. Interdiffusion coefficients were deduced using a Fourier algorithm. The interdiffusion coefficients follow an Arrhenius law for a given Ge concentration. The interdiffusivity increases significantly with increasing Ge concentration.

Ajustement par recuits rapides RTA (rapid thermal annealing) des contraintes dans des couches minces de tungstène utilisées comme absorbant pour des masques à rayons X

1991 ◽  
Vol 69 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
H. Lafontaine ◽  
J. F. Currie ◽  
S. Boily ◽  
M. Chaker ◽  
H. Pépin
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Power ◽  
X Ray ◽  
Stress Changes ◽  
Different Temperatures ◽  
Absorbing Layer ◽  
Good Agreement ◽  
Sputtering System

Tungsten thin films are deposited with a triode sputtering system in order to obtain an absorbing layer for X-ray masks. The mechanical stress is studied as a function of different pressure and RF power conditions during deposition. Rapid thermal annealing at different temperatures and durations is performed in order to produce films under low compressive stress. We observe that the stress changes occur over the time scale of seconds at the annealing temperature and that the corresponding activation energies are low (60 meV). Grain growth in a preferred orientation explains the observed changes in stress. The magnitude in the change of stress is in good agreement with a model proposed by Hoffman et al. relating the stress to grain size and grain boundary dimensions. [Journal translation]

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