Transport Properties of Two-Dimensional Electron Gas in Cubic AlGaN/GaN Heterostructures

2013 ◽  
Vol 873 ◽  
pp. 777-782
Author(s):  
Qian Feng ◽  
Peng Shi ◽  
Jie Zhao ◽  
Kai Du ◽  
Yu Kun Li ◽  
...  
Keyword(s):  
Theoretical Study ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Dimensional Electron ◽  
Barrier Thickness ◽  
Al Content ◽  
Alloy Disorder ◽  
Dimensional Electron Gas ◽  
Disorder Scattering

We presented a theoretical study of the dependence of 2DEG mobility on temperature, barrier thickness, Al content, donor concentration to reveal the internal physics of 2DEG mobility in cubic AlGaN/GaNheterostructures. The 2DEG mobility is modeled as a combined effect of the scattering mechanisms including acoustic phonons, ionized impurity, dislocation, alloy disorder and interface roughness scattering.The variation of mobility results mainly from the change of 2DEG density and temperature. It reveals the dominant scattering mechanismsare dislocation and alloy disorder scattering atlow temperature.Acoustic phonons scattering becomes the major limit at 300k. Impurity scattering plays the key role when donor density rises. We find a maximum mobility with a structure of 25% Al content and 4-5nm barrier thickness.

scholarly journals Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

2021 ◽  
Vol 2103 (1) ◽  
pp. 012202
Author(s):  
D S Arteev ◽  
A V Sakharov ◽  
W V Lundin ◽  
E E Zavarin ◽  
A F Tsatsulnikov
Keyword(s):  
Electron Gas ◽  
Atomic Diffusion ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Moderate Amount ◽  
Alloy Disorder ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure ◽  
Disorder Scattering

Abstract The influence of two types of AlN/GaN interfacial non-idealities, namely unintentional Ga incorporation into AlN spacer and blurring of the spacer due to Al and/or Ga atomic diffusion on the mobility and density of two-dimensional electron gas in AlGaN/AlN/GaN heterostructure was studied theoretically. It was found that moderate amount of GaN in the nominal AlN spacer does not affect much the mobility and density of 2DEG as long as the interface is abrupt. In contrast, the blurring of AlN/GaN interface was found to have a significant impact on the mobility and sheet resistance of the structure since the GaN channel actually becomes AlGaN and alloy-disorder scattering takes place.

MAGNETORESISTANCE OF A SILICON MOSFET ON THE (111) SURFACE IN A PARALLEL MAGNETIC FIELD

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1529-1534 ◽  
Author(s):  
A. GOLD ◽  
O. ANTONIE
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Zero Temperature ◽  
Parallel Magnetic Field ◽  
Interface Roughness Scattering ◽  
Dimensional Electron Gas ◽  
Passivated Silicon ◽  
Theoretical Results

In comparison with silicon (100) we argue that the silicon (111) surface is a surface with higher mobility and stronger Coulomb interaction effects. For the resistance of the two-dimensional electron gas we discuss the effects of a magnetic field parallel to the surface: for zero temperature we present theoretical results for the magnetoresistance of an electron gas at the surface of silicon (111) with a six-fold valley degeneracy. Impurity scattering and interface roughness scattering are taken into account. A recent study of a hydrogen-passivated silicon (111) surface showed a mobility proportional to the electron density. We present, using a model for neutral impurities, predictions for the magnetoresistance of this sample in a parallel magnetic field.

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