Experimental Study of Electron Beam Welded QCr0.8 Bronze Joint

2014 ◽  
Vol 881-883 ◽  
pp. 1416-1419
Author(s):  
Ting Wang ◽  
Hou Qin Wang ◽  
Bing Gang Zhang ◽  
Shi Sheng Zhong ◽  
Ji Cai Feng
Keyword(s):  
Electron Microscopy ◽  
Mechanical Property ◽  
Scanning Electron Microscopy ◽  
Experimental Study ◽  
Electron Beam ◽  
Electron Beam Welding ◽  
Major Influence ◽  
Strengthening Phase ◽  
Butt Welding ◽  
Scanning Electron

The butt welding test has been performed on QCr0.8 bronze by electron beam welding. Microstructure of the joint was examined by optical microscopy and scanning electron microscopy with EDS. Microhardness of the joint was determined to evaluate the mechanical property of the joint. The fusion zone and the heat affected zone became the weak area of the joint due to the growth of grains and the redissolve of strengthening phase. The decrease of strengthening phase has a major influence on the microhardness reduction of the joint..

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Investigation of Die Tilting of Packages with Single and Multi-chips

2018 ◽  
Author(s):  
Lo Chea Wee ◽  
Tan Sze Yee ◽  
Gan Sue Yin ◽  
Goh Cin Sheng
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Optical Microscopy ◽  
Device Performance ◽  
Electronic Components ◽  
Area Of Interest ◽  
On Chip ◽  
Scanning Electron

Abstract Advanced package technology often includes multi-chips in one package to accommodate the technology demand on size & functionality. Die tilting leads to poor device performance for all kinds of multi-chip packages such as chip by chip (CbC), chip on chip (CoC), and the package with both CbC and CoC. Traditional die tilting measured by optical microscopy and scanning electron microscopy has capability issue due to wave or electron beam blocking at area of interest by electronic components nearby. In this paper, the feasibility of using profilemeter to investigate die tilting in single and multi-chips is demonstrated. Our results validate that the profilemeter is the most profound metrology for die tilting analysis especially on multi-chip packages, and can achieve an accuracy of <2μm comparable to SEM.

Comparative Study of Acid Etching on Dental Enamel

2018 ◽  
Vol 69 (10) ◽  
pp. 2913-2915
Author(s):  
Daniela Jumanca ◽  
Anamaria Matichescu ◽  
Atena Galuscan ◽  
Laura Cristina Rusu ◽  
Cornelia Muntean
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Experimental Study ◽  
Orthophosphoric Acid ◽  
Dental Enamel ◽  
Acid Etching ◽  
Sealing Material ◽  
Mechanical Bond ◽  
Materials Used ◽  
Scanning Electron

This experimental study aims to analyse the effectiveness of various materials used in demineralisation of dental enamel. This work aims to create a mechanical bond by filling the pegs with sealing material. In order to achieve this goal, five teeth were compared using different concentrations of orthophosphoric acid and exposure times. In this regard, five different tests were performed and the results were analysed using the SEM technique (scanning electron microscopy). These comparative analyses revealed that etching using 35% orthophosphoric acid for one minute and etching using Icon Etch for two minutes were the most effective.

Microstructure Analysis of Electron-Beam Brazed γ-Titanium Aluminide

2011 ◽  
Vol 690 ◽  
pp. 153-156
Author(s):  
Uwe Reisgen ◽  
Simon Olschok ◽  
Alexander Backhaus
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Titanium Aluminide ◽  
Titanium Aluminides ◽  
Microstructure Analysis ◽  
Energy Dispersive ◽  
X Ray ◽  
Scanning Electron

This paper gives an account of research which has been carried out on electron-beam brazed specimens made of high-Niobium γ-titanium aluminides. The microstructure in the brazing area of two different brazes (TiCuNi and Ni 102) is explained and analysed via scanning electron microscopy and energy dispersive X-ray spectroscopy.

Experimental Study on Combustion Reaction between Silicon and Nitrogen in Transport Bed

2013 ◽  
Vol 860-863 ◽  
pp. 1374-1377
Author(s):  
Shao Wu Yin ◽  
Li Wang ◽  
Li Ge Tong ◽  
Chuan Ping Liu ◽  
Xing Long Zheng
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Experimental Study ◽  
Reaction Time ◽  
Reaction Temperature ◽  
Combustion Reaction ◽  
X Ray Diffraction ◽  
Amorphous Silicon Nitride ◽  
X Ray ◽  
Scanning Electron

Combustion reaction between silicon powders and nitrogen in transport bed was studied. The reaction temperature ranged from 1523 to 1653 K, and the reaction time ranged from 0 to 2.7 min. The phase compositions, morphologies and chemical composition of the products were analyzed by X-ray diffraction, scanning electron microscopy and O/N determinater, respectively. The experimental results showed, in the case of silicon powders with particle size of 2.2 μm, the conversion rate of silicon was 61.9% at reaction temperature of 1653 K and reaction time of 2.7min, and the products mainly comprised amorphous silicon nitride powders.

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