Structure, Electrical, Optical and Magnetic Properties of Mn-Doped Copper Nitride Thin Films Deposited by Radio Frequency Magnetron Sputtering

Mn-doped Cu3N films were prepared by radio frequency reactive magnetron sputtering method under different manganese concentration. The deposits exhibit a satisfactory crystallinity and a preferred growth orientation along the (111) plane. The shapes of crystalline grains vary from pyramid-like to rugby-ball-like with the Mn-doping constituent in Cu3N film reaching 0.02%. The electrical resistivity of Mn-doped Cu3N films has dramatically increased from 0.102×103 Ω·cm to 0.495×103 Ω·cm at room temperature. Moreover, the reflectivity difference and ferromagnetic property have also been investigated.

Download Full-text

Effect of sputtering power on the properties of SiO2 films grown by radio frequency magnetron sputtering at room temperature

Optical and Quantum Electronics ◽

10.1007/s11082-020-02639-4 ◽

2021 ◽

Vol 53 (1) ◽

Author(s):

Changjiang Zhao ◽

Leran Zhao ◽

Juncheng Liu ◽

Zhigang Liu ◽

Yan Chen

Keyword(s):

Magnetron Sputtering ◽

Radio Frequency ◽

Room Temperature ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

Sio2 Films ◽

Sputtering Power

Download Full-text

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

MRS Proceedings ◽

10.1557/opl.2015.596 ◽

2015 ◽

Vol 1792 ◽

Author(s):

Jiantuo Gan ◽

Augustinas Galeckas ◽

Vishnukanthan Venkatachalapathy ◽

Heine N. Riise ◽

Bengt G. Svensson ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Room Temperature ◽

Quartz Substrate ◽

Rf Magnetron Sputtering ◽

Considerable Improvement ◽

Photoluminescence Properties ◽

Radio Frequency Magnetron Sputtering ◽

Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

Download Full-text

Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

MRS Proceedings ◽

10.1557/proc-0957-k10-51 ◽

2006 ◽

Vol 957 ◽

Author(s):

Luis Manuel Angelats ◽

Maharaj S Tomar ◽

Rahul Singhal ◽

Oscar P Perez ◽

Hector J Jimenez ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Visible Range ◽

Radio Frequency Magnetron Sputtering ◽

Optical And Magnetic Properties ◽

Doped Zno ◽

Xrd Patterns ◽

Antiferromagnetic Behavior

ABSTRACTZn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

Download Full-text