scholarly journals Nanostructural Characterisation and Optical Properties of Sputter-Deposited Thick Indium Tin Oxide (ITO) Coatings

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1127
Author(s):  
Andrius Subacius ◽  
Bill Baloukas ◽  
Etienne Bousser ◽  
Steve J. Hinder ◽  
Mark A. Baker ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Nanocrystalline Structure ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Ito Thin Films ◽  
Sputter Deposited ◽  
Thick Coatings

Indium tin oxide (ITO) thin films, used in many optoelectronic applications, are typically grown to a thickness of a maximum of a few hundred nanometres. In this work, the composition, microstructure and optical/electrical properties of thick ITO coatings deposited by radio frequency magnetron sputtering from a ceramic ITO target in an Ar/O2 gas mixture (total O2 flow of 1%) on unheated glass substrates are reported for the first time. In contrast to the commonly observed (200) or (400) preferential orientations in ITO thin films, the approximately 3.3 μm thick coatings display a (622) preferential orientation. The ITO coatings exhibit a purely nanocrystalline structure and show good electrical and optical properties, such as an electrical resistivity of 1.3 × 10−1 Ω·cm, optical transmittance at 550 nm of ~60% and optical band gap of 2.9 eV. The initial results presented here are expected to provide useful information for future studies on the synthesis of high-quality thick ITO coatings.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

Structural and Optical Properties of InSnO3 Sol-Gel Coatings to Use in Windows Glass Buildings

2010 ◽  
Vol 168-170 ◽  
pp. 2348-2351
Author(s):  
Lazaro De Jesus Dominguez Gallegos ◽  
Angélica Silvestre López Rodríguez ◽  
Pio Sifuentes Gallardo ◽  
Miguel Angel Hernández Rivera ◽  
María Guadalupe Garnica Romo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Indium Chloride ◽  
Glass Substrates ◽  
Tin Chloride ◽  
Ito Thin Films ◽  
Ito Films

Indium stannate (InSnO3) films doping with small amounts of copper are made highly useful as architectural window coatings. Indium-tin-oxide (ITO) has attracted intense interest due to some of its unique characteristics; it has high optical transmittance in the visible region, low electric resistivity, and chemical stability. Therefore, ITO thin films have been found to play an important role in opto-electronic applications. In this work, uniform and transparent ITO films were deposited onto glass substrates using a sol-gel process. The initial sols were prepared by mixing solutions of indium chloride prepared in anhydrous ethanol with tin chloride and mechanically stirring and refluxed 2 hours and aged 2 week, the resultant mixture until a clear and sticky coating sol was obtained. The glass substrates were spin-coated and annealed at 500 °C. Because annealing conditions affect the microstructures, the properties of the resultant ITO films can be controlled. The optical transmittance of 200 nm thick ITO film was more than 80% in the visible region. The surface morphology examined by SEM appears to be uniform over large surface areas. The structural, microstructural and optical properties of the coatings and powders made from the sols were extensively characterized by using XRD, AFM and spectrophotometer techniques

scholarly journals Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Oxide Content ◽  
Glass Substrates ◽  
Ito Thin Films

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

Recoil Implantation of Ito thin Films on Glass Substrates

1983 ◽  
Vol 27 ◽  
Author(s):  
B. H. Rabin ◽  
B. B. Harbison ◽  
S. R. Shatynski
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Energy Deposition ◽  
Window Glass ◽  
Glass Substrates ◽  
Post Annealing ◽  
Ito Thin Films ◽  
Film Substrate

ABSTRACTIndium-Tin Oxide (ITO) heat mirror films implanted into window glass were obtained by post annealing of argon irradiated coatings of In-5w/o Sn produced by reactive evaporation in oxygen. Characterization of coatings has been carried out using TEM and AES. Optical properties have also been evaluated. The production of acceptable thin films requires low energy deposition rates during ion bombardment. This places a limit on the extent of film-substrate mixing, which is required if increased film lifetimes are to be realized.

scholarly journals The Effect of Deposition Rate on the Electrical Properties of Indium Tin Oxide (ITO) Thin Films

2015 ◽  
Vol 16 (2) ◽  
pp. 286
Author(s):  
Hadaate Ullah ◽  
Shahin Mahmud ◽  
Fahmida Sharmin Jui
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Vital Role ◽  
Light Emitting ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Ito Thin Films

<p>Indium-tin oxide (ITO) which is optically transparent is referred as a “universal” electrode for various optoelectronic devices such as organic light emitting diodes (OLEDs). It is scientifically proved that the performance of OLEDs raises up significantly by exposing the ITO surface to oxygen plasma. This study employs conducting atomic force microscopy (C-AFM) for unique nanometer-scale mapping of the local current density of a vapor-deposited ITO film. Indium Tin Oxide (ITO) thin films have been prepared by using the reactive evaporation method on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays a vital role in controlling the electrical properties of the ITO thin films. The resistivity and the electrical conductivity were also investigated. The electrical resistivity of 3.10 x10 <sup>–6</sup> Ωm has been obtained with a deposition rate of 2 nm/min.</p>

Post-Annealing Effects on ITO Thin Films RF Sputtered at Different Thicknesses on Si and Glass

2014 ◽  
Vol 925 ◽  
pp. 411-415 ◽  
Author(s):  
Ahmad Hadi Ali ◽  
Ahmad Shuhaimi ◽  
Siti Khadijah Mohd Bakhori ◽  
Hassan Zainuriah
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Morphological Characteristics ◽  
Annealing Treatment ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Post Annealing ◽  
Ito Thin Films

We report on electrical, optical and surface morphological characteristics of indium tin oxide (ITO) thin films. The ITO was deposited by radio frequency (RF) magnetron sputtering on Si and glass substrates at different thicknesses of 125 nm and 239 nm. Post-annealing treatment was conducted on the samples at temperature of 500°C and 600°C. From Hall Effect measurement, the lowest resistivity was measured as 4.4 × 10-4 Ωcm and 4.5 × 10-4 Ωcm corresponding to the 239 nm and 125 nm ITO sample, respectively, after post-annealed at 600°C. Using UV-Vis spectrophotometer, the highest transmittance of ~84% at 470 nm was observed with respect to the 125 nm ITO thin films after post-annealed at 500°C. Furthermore, the 500°C post-annealed 125 nm thin film shows highest carrier concentrations of more than 1021 cm-3 and smoothest surface morphology of 0.5 nm root-mean-square, RMS. It is clearly shown that post-annealing treatment on ITO thin films is able to enhance the electrical and optical transmittance properties as compared to the as deposited films.

Structural and Optical Properties of Nickel (Ni)/indium Tin Oxide (ITO) Thin-Films Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 181-185 ◽  
Author(s):  
M. Sobri ◽  
A. Shuhaimi ◽  
M. Mazwan ◽  
K.M. Hakim ◽  
S. Najwa ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Rf Magnetron Sputtering ◽  
Sample Surface ◽  
Deposition Parameter ◽  
Ito Thin Films

Nickel (Ni)/ indium tin oxide (ITO) thin-films have been deposited on silicon (Si) and glass substrates using radio-frequency (RF) magnetron sputtering at 200°C temperature. ITO layer was deposited on top of Ni layer with various deposition parameter. The material and optical properties of the ITO samples with and without Ni seed layer were analyzed. X-ray diffraction studies shows that the films are crystalline with the typical ITO diffraction peaks of (222), (400) and (411). The FESEM and AFM images shows that the grains have uniform shapes and sizes. FESEM results reveal that the grain size along the sample surface decreases when the Ni seed layer is added. Both the samples shows higher transmittance of more than 95% in UV-vis spectrometer.

Improvement of Structural, Electrical, and Optical Properties of Sol–Gel-Derived Indium–Tin-Oxide Films by High Efficiency Microwave Irradiation

2021 ◽  
Vol 21 (3) ◽  
pp. 1875-1882
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Microwave Irradiation ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Microwave Power ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

Herein, indium–tin-oxide (ITO) thin films are prepared by a solution-based spin-coating process followed by a heat-treatment process with microwave irradiation (MWI). The structural, electrical and optical properties of the films are investigated. The properties of the microwave-irradiated sol–gel ITO films are compared with those of as-spun ITO films and sol–gel ITO films subjected to conventional furnace annealing (CFA) or a rapid thermal process (RTP). After microwave irradiation, the sol–gel ITO thin films are found to have crystallized, and they indicate enhanced conductivity and transparency. Furthermore, the resistances of the ITO films are decreased considerably at increased microwave power levels, and the resistivity of the films almost saturate even at a low microwave power of 500 W. The improved physical properties of the MW-irradiated samples are mainly due to the increase in the electron concentration of the ITO films and the increase in the carrier mobility after MWI.

scholarly journals Effects of substrate temperature on the properties of the indium tin oxide thin films deposited by sputtering method

2018 ◽  
Vol 185 ◽  
pp. 00006
Author(s):  
Chia-Ching Wu ◽  
Chien-Chen Diao
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Deposition Temperature ◽  
Optical Transmittance ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Visible Range ◽  
Radio Frequency Sputtering ◽  
Ito Thin Films

High-quality transparent conductive indium tin oxide (ITO) thin films were deposited on glass substrates using radio frequency sputtering method. The structure and electrical and optical properties of the ITO thin films were mainly investigated. The ITO thin films showed strong diffraction peak having a preferred orientation along the [111] direction as the deposition temperature at 120 to 160 °C. In the transmission spectra, the optical transmittance increased in the visible range as the deposition temperature increased from RT to 160 °C. A minimum resistivity of 3.06×10-3 Ω-cm was obtained for the ITO thin film deposition at 160 °C.

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