Characterizations of Electron Beam Evaporated Silicon Thin Films on Plastic Substrates for Solar Cells Applications

2014 ◽  
Vol 925 ◽  
pp. 543-547
Author(s):  
P.C. Ang ◽  
K. Ibrahim ◽  
M.Z. Pakhuruddin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Solar Cells ◽  
Low Cost ◽  
Plastic Substrates ◽  
X Ray ◽  
Intrinsic Nature ◽  
Silicon Thin Films ◽  
Thin Film Layer

Samples of thin film silicon (Si) on low cost polyethylene terephthalate (PET) plastic substrates were prepared by electron beam (e-beam) evaporation technique. Five samples of different thicknesses were deposited. Structural, optical, surface morphology and electrical characterizations were then carried out on these samples by energy dispersion X-ray (EDX) spectroscopy, high resolution X-ray diffraction (HR-XRD), UV spectrophotometer, atomic force microscopy (AFM) and four-probe meter. EDX spectra for these as-evaporated Si thin films on PET showed that the peak at 1.7398 eV belongs to Si atom which confirms the existence of the Si thin film layer. HR-XRD result showed that the chosen sample was highly amorphous. The transmission and reflection were carried out from wavelength 200 nm to 2000 nm and the optical band gap of the samples was calculated by Taucs relations. The root mean square (RMS) of surface roughness was low (smooth morphology) and found to be independent to the thickness of the film. The films were found to be highly resistive due to their intrinsic nature (no doping applied during the deposition). The effects of the properties towards thin film solar cells fabrication were subsequently discussed.

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

Amorphous Silicon, Microcrystalline Silicon, and Thin-Film Polycrystalline Silicon Solar Cells

MRS Bulletin ◽  
2007 ◽  
Vol 32 (3) ◽  
pp. 219-224 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Reinhard Carius ◽  
Guy Beaucarne
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Float Glass ◽  
Film Material ◽  
Microcrystalline Silicon ◽  
Plastic Substrates ◽  
Thin Film Silicon ◽  
Amorphous Si

AbstractThin-film solar cell technologies based on Si with a thickness of less than a few micrometers combine the low-cost potential of thin-film technologies with the advantages of Si as an abundantly available element in the earth's crust and a readily manufacturable material for photovoltaics (PVs). In recent years, several technologies have been developed that promise to take the performance of thin-film silicon PVs well beyond that of the currently established amorphous Si PV technology. Thin-film silicon, like no other thin-film material, is very effective in tandem and triple-junction solar cells. The research and development on thin crystalline silicon on foreign substrates can be divided into two different routes: a low-temperature route compatible with standard float glass or even plastic substrates, and a high-temperature route (>600°C). This article reviews the material properties and technological challenges of the different thin-film silicon PV materials.

Polycrystalline Silicon Thin Films on SiC Substrates for Solar Cells

2007 ◽  
Vol 280-283 ◽  
pp. 1147-1148 ◽  
Author(s):  
Hai Feng Li ◽  
Yong Huang ◽  
Zhi Jian Wan ◽  
Hou Xing Zhang ◽  
Li Ming Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Chemical Treatment ◽  
Polycrystalline Silicon ◽  
Crystal Size ◽  
Ultrasonic Method ◽  
Preferred Orientation ◽  
Silicon Thin Films ◽  
Columnar Grain

The thin-film of silicon deposited by RTCVD on pressureless sintered SiC substrate with the size of 30mm×20mm, which is cleaned by ultrasonic method and chemical treatment. The crystal size of silicon columnar grain can reach 190 µm and its preferred orientation is [111] after ZMR process.

TiNi/GaAs Thin Film Structures for Gate Metallizations

2000 ◽  
Vol 648 ◽  
Author(s):  
Chichang Zhang ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Tini

AbstractShape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

scholarly journals Fabrication of the Cu2ZnSnS4 Thin Film Solar Cell via a Photo-Sintering Technique

2021 ◽  
Vol 12 (1) ◽  
pp. 38
Author(s):  
Vu Minh Han Cao ◽  
Jaesung Bae ◽  
Joongpyo Shim ◽  
Byungyou Hong ◽  
Hongsub Jee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Low Cost ◽  
Secondary Phase ◽  
Band Gap Energy ◽  
Absorber Layer ◽  
Solar Cell Performance ◽  
X Ray ◽  
Electron Microscopes

Alternative photo-sintering techniques for thermal annealing processes are used to improve the morphology, layer properties, and enhance solar cell performance. The fast, nontoxic, low cost, and environmentally friendly characteristics of Cu2ZnSnS4 have led to its consideration as an alternative potential absorber layer in copper indium gallium diselenide thin film solar cells. This work investigates the photo-sintering process for the absorber layer of Cu2ZnSnS4 solar cells. A Cu2ZnSnS4 layer was grown by hot-injection and screen-printing techniques, and the characteristics of the photo-sintered Cu2ZnSnS4 layer were evaluated by X-ray Diffraction, Raman spectroscopy, Energy dispersive X-ray analysis, Ultraviolet-visible spectroscopy, and field emission scanning electron microscopes. Overall, the optimal composition was Cu-poor and Zn-rich, without a secondary phase, estimated optical band-gap energy of approximately 1.6 eV, and enhanced morphology and kesterite crystallization. Using an intensity pulse light technique to the CZTS layer, fabrication of the solar cell device demonstrated successfully, and the efficiency of 1.01% was achieved at 2.96 J/cm2.

CuInSe2 thin film solar cells prepared by low-cost electrodeposition techniques from a non-aqueous bath

RSC Advances ◽  
2015 ◽  
Vol 5 (109) ◽  
pp. 89635-89643 ◽  
Author(s):  
Priyanka U. Londhe ◽  
Ashwini B. Rohom ◽  
Nandu B. Chaure
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Low Cost ◽  
Cell Structure ◽  
Power Conversion ◽  
Thin Film Solar Cells ◽  
Solar Cell Structure ◽  
Cuinse2 Thin Film

Highly crystalline and stoichiometric CIS thin films have been electrodeposited from non-aqueous bath at temperature 130 °C. Superstrate solar cell structure (FTO/CdS/CIS/Au) exhibited 4.5% power conversion efficiency.

Electronic Transport Properties of Hydrogenated Amorphous Silicon Thin Films Deposited on Plastic Substrates

2011 ◽  
Vol 221 ◽  
pp. 189-193
Author(s):  
Ying Ge Li ◽  
Dong Xing Du
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hydrogenated Amorphous Silicon ◽  
Plastic Substrates ◽  
Electronic Transport Properties ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Aiming for potential application in flexible solar cells, electronic transport properties are studied for hydrogenated amorphous silicon thin films on plastic substrates. Intrinsic hydrogenated amorphous silicon layers are deposited on Kapton and Upilex-s polyimide substrates at temperatures of 100°C and 180°C by plasma enhanced chemical vapor deposition (PECVD) system. Layers on 75μm and 125 thick Kapton and on 125 Upilex-s substrates are characterized by dark conductivity and activation energy measurements. It can be concluded that the intrinsic layer on 125μm thick Kapton and Upilex-s plastic both have favorable electrical properties and therefore could be employed as substrate material for flexible solar cells.

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